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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SHF-0186
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| OCR Text |
gaas Heterostructure FET (HFET) housed in a low-cost surfacemount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB ... |
| Description |
0.05-12 GHz, 0.5 Watt gaas HFET
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| File Size |
725.78K /
4 Page |
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it Online |
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STANFORD[Stanford Microdevices]
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| Part No. |
SHF-0198
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| OCR Text |
gaas Heterostructure FET housed in a low-cost stripline-mount ceramic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power-added efficiency and improved linearity. Output power at 1d... |
| Description |
DC-12 GHz, 0.5 Watt AIgaas/gaas HFET
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| File Size |
69.53K /
3 Page |
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it Online |
Download Datasheet |
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SONY[Sony Corporation]
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| Part No. |
SLD235VL
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| OCR Text |
... product uses gallium arsenide (gaas). This is not a problem for normal use, but gaas vapors may be potentially hazardous to the human body. Therefore, never crush, heat to the maximum storage temperature or higher, or place the product in ... |
| Description |
Index-Guided High Power Algaas Laser Diode
Index-Guided High Power Algaas Laser Diode
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| File Size |
43.92K /
4 Page |
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it Online |
Download Datasheet |
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SONY[Sony Corporation]
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| Part No. |
SLD238VL
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| OCR Text |
... product uses gallium arsenide (gaas). This is not a problem for normal use, but gaas vapors may be potentially hazardous to the human body. Therefore, never crush, heat to the maximum storage temperature or higher, or place the product in ... |
| Description |
Index-Guided High Power Algaas Laser Diode
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| File Size |
43.85K /
4 Page |
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it Online |
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Electronic Theatre Controls, Inc.
ETC[ETC]
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| Part No. |
SLD432S
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| OCR Text |
...eam emitting point Active layer gaas substrate 100 m N-side electrode Radiation angle Parallel to junction Perpendicular to junction Symbol Typical value Ith Iop Vop p // D 13 50 1.9 808 8 deg. 24 1.2 W/A Unit A V nm
Differential effici... |
| Description |
Ultrahigh Power Infrared Array Laser Diode Achieves 40 W Optical Power Output
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| File Size |
49.15K /
2 Page |
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it Online |
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RFMD[RF Micro Devices]
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| Part No. |
TA0012
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| OCR Text |
...llowing performance better than gaas MESFETs, yet allowing biasing similar to Silicon Bipolar from a single positive voltage. This eliminate...Algaas) heterostructure, the power and efficiency performance is the highest of any commercially ava... |
| Description |
New High Power, High Efficiency HBT GSM Power Amplifier
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| File Size |
73.22K /
4 Page |
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it Online |
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UOT[Unity Opto Technology]
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| Part No. |
UVP-2157A UVP-2057 UVP-2057A
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| OCR Text |
...rom Algaas on a non-transparent gaas substrate. The green LED chip are made from GaP on a transparent GaP substrate. The red orange LED chip are made from gaasP on a transparent GaP substrate.
FEATURES
l l l l l
Industuy standard siz... |
| Description |
2.0 inch ( 50.80mm ) 5X7 DOT MATRIX LED DISPLAY UVP-2X57A SERIES
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| File Size |
144.10K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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