design process pdf Datasheet P9 Description --- IC-ON-LINE


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design process Datasheet PDF File

For design process Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				TOSHIBA
Part No.	HN1B01FU HN1B01FUGR
Description	TRANSISTOR \| BJT \| PAIR \| COMPLEMENTARY \| 50V V(BR)CEO \| 150MA I(C) \| TSOP Transistor Silicon PNP Epitaxial Type (PCT process) Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
File Size	212.83K / 6 Page	View it Online	Download Datasheet

				Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
Part No.	CM400DU-5F
Description	Trench Gate design Dual IGBTMOD?/a> 400 Amperes/250 Volts Trench Gate design Dual IGBTMOD⑩ 400 Amperes/250 Volts Trench Gate design Dual IGBTMOD 400 Amperes/250 Volts Trench Gate design Dual IGBTMOD400 Amperes/250 Volts
File Size	65.56K / 4 Page	View it Online	Download Datasheet

				Bourns, Inc. BOURNS INC
Part No.	8230-90-RC 8230-94-RC 8230-78-RC 8230-76-RC 8230-58-RC 8230-48-RC 8230-50-RC 8230-54-RC 8230-30-RC 8230-14-RC 8230-40-RC 8230-24-RC 8230-36-RC 8230-32-RC
Description	Inductor; Series:8230; Inductance:820uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:3.8MHz; Core Material:Ferrite; Leaded process Compatible:Yes 1 ELEMENT, 820 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:100nH; Inductance Tolerance: /- 10 %; Q Factor:40; Self Resonant Frequency:690MHz; Core Material:Phenolic; Leaded process Compatible:Yes 1 ELEMENT, 0.1 uH, PHENOLIC-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:270uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:8MHz; Core Material:Ferrite; Leaded process Compatible:Yes 1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:220uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:9MHz; Core Material:Ferrite; Leaded process Compatible:Yes 1 ELEMENT, 220 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:39uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:22MHz; Core Material:Ferrite; Leaded process Compatible:Yes 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:15uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:35MHz; Core Material:Iron; Leaded process Compatible:Yes 1 ELEMENT, 15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:18uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:32MHz; Core Material:Iron; Leaded process Compatible:Yes 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:27uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:22MHz; Core Material:Iron; Leaded process Compatible:Yes 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:2.7uH; Inductance Tolerance: /- 10 %; Q Factor:37; Self Resonant Frequency:100MHz; Core Material:Iron; Leaded process Compatible:Yes 1 ELEMENT, 2.7 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:560nH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:300MHz; Core Material:Phenolic; Leaded process Compatible:Yes 1 ELEMENT, 0.56 uH, PHENOLIC-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:6.8uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:60MHz; Core Material:Iron; Leaded process Compatible:Yes 1 ELEMENT, 6.8 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:1.5uH; Inductance Tolerance: /- 10 %; Q Factor:28; Self Resonant Frequency:140MHz; Core Material:Iron; Leaded process Compatible:Yes Inductor; Series:8230; Inductance:4.7uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:75MHz; Core Material:Iron; Leaded process Compatible:Yes Inductor; Series:8230; Inductance:3.3uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:90MHz; Core Material:Iron; Leaded process Compatible:Yes
File Size	187.61K / 2 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	RN4905
Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Silicon NPN Epitaxial Type (PCT process)
File Size	150.10K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	RN4911
Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Silicon NPN Epitaxial Type (PCT process)
File Size	165.75K / 6 Page	View it Online	Download Datasheet

				Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
Part No.	3DFO 2DFO 1DFO 3DF0D27 2DF0D27 1DF0D27 3DF0T82 2DF0T82 1DF0T82 1DF0D10 1DF0D12 1DF0D15 1DF0D18 1DF0D22 1DF0D23 1DF0D24 1DF0D25 1DF0D33 1DF0D39 1DF0D47 1DF0D56 1DF0D68 1DF0Q10 1DF0Q12 1DF0Q15 1DF0Q18 1DF0Q22 1DF0Q27 1DF0Q33 1DF0Q39 1DF0Q47 1DF0Q56 1DF0Q68 1DF0Q82 1DF0T10 1DF0T12 1DF0T15 1DF0T18 1DF0T22 1DF0T27 1DF0T33 1DF0T39 1DF0T47 1DF0T56 1DF0T68 2DF0D10 2DF0D12 2DF0D15 2DF0D18 2DF0D22 2DF0D23 2DF0D24 2DF0D25 2DF0D33 2DF0D39 2DF0D47 2DF0D56 2DF0D68 2DF0T18 2DF0T22 2DF0T27 2DF0T33 2DF0T39 2DF0T47 2DF0T56 2DF0T68 3DF0D10 3DF0D12 3DF0D15 3DF0D18 3DF0D22 3DF0D23 3DF0D24 3DF0D25 3DF0D33 3DF0D39 3DF0D47 3DF0Q10 3DF0Q12 3DF0Q15 3DF0Q18 3DF0Q22 3DF0Q27 3DF0Q33 3DF0Q39 3DF0Q47 3DF0Q56 3DF0Q68 3DF0Q82 3DF0T10 3DF0T12 3DF0T15 3DF0T18 3DF0T22 3DF0T27 3DF0T33 3DF0T39 3DF0T47 3DF0T56 3DF0T68
Description	128 x 128 pixel format, LED or EL Backlight available 低电容损耗角正切光盘 Low Dissipation Factor Disc Capacitors 低电容损耗角正切光盘 CAP 47UF 4V 16V TANT SMD-6032-15 TR-7 Pushbutton Switch; Leaded process Compatible:Yes RoHS Compliant: Yes Telephone equipment, Telephones; Leaded process Compatible:No; Peak Reflow Compatible (260 C):No From old datasheet system
File Size	119.30K / 2 Page	View it Online	Download Datasheet

				C&DTechnologies CANDD[C&D Technologies]
Part No.	2300 23220 232R2 23330 23150 23100 23S6R8 23S180 23S3R3 23S330 23S4R7 23S680 23101 233R3 23470 234R7 23680 236R8 23S100 23S101 23S120 23S150 23S151 23S220 23S221 23S270 23S2R2 23S390 23S470 23S560
Description	Bobbin Wound Surface Mount Inductors 1 ELEMENT, 3.3 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Bobbin Wound Surface Mount Inductors 1 ELEMENT, 15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD DSP - CobraNet IC CobraNet Audio Networking processor 1 ELEMENT, 6.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Evaluation, design Tools Ref Bd 10Mbps Ethernet Controller D-Subminiature Connector; Gender:Male; No. of Contacts:9; Contact Termination:Wire; D Sub Shell Size:DB9; Body Material:Thermoplastic; Leaded process BobbinWoundSurfaceMountInductors
File Size	49.03K / 2 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
Part No.	1210D 1202D 1206FD 1206D 1210UFD
Description	200 V - 1,000 V Single Phase Bridge 200 1,000 V单相 Multiconductor Cable; Leaded process Compatible:Yes RoHS Compliant: Yes Sleeving; Material:Tinned Copper; Leaded process Compatible:Yes RoHS Compliant: Yes
File Size	66.46K / 2 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	RN4612
Description	Transistor Silicon PNP Epitaxial Type (PCT process) Silicon NPN Epitaxial Type (PCT process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
File Size	175.88K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	RN4610
Description	TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT process) SILICON NPN EPITAXIAL TYPE (PCT process) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS.
File Size	210.99K / 4 Page	View it Online	Download Datasheet

For design process Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

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