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  anti-burst Datasheet PDF File

For anti-burst Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

    GS882V37AB-250 GS882V37AB-250I GS882V37AB-225 GS882V37AB-225I GS882V37AB-200 GS882V37AB-200I GS882V37AD-250I GS882V37AB

GSI[GSI Technology]
Part No. GS882V37AB-250 GS882V37AB-250I GS882V37AB-225 GS882V37AB-225I GS882V37AB-200 GS882V37AB-200I GS882V37AD-250I GS882V37AB GS882V37AD-200 GS882V37AD-200I GS882V37AD-225 GS882V37AD-225I GS882V37AD-250 GS882V37A
Description 9Mb Burst SRAMs
256K x 36 9Mb SCD/DCD Sync Burst SRAMs

File Size 620.86K  /  28 Page

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    Micron Semiconductor
Part No. MT45W2MW16B MT45W2MW16BFB
Description (MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory
(MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory

File Size 767.69K  /  53 Page

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    Vicor, Corp.
Part No. WED2ZL361MV50BC WED2ZL361MV38BC WED2ZL361MV42BC WED2ZL361MV35BC
Description 1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,5.0ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,5.0纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.8ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.8纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,4.2ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,4.2纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.5ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.5纳秒同步脉冲流水线静态随机存储器(无总线等待时间))

File Size 213.99K  /  12 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628JTM
Description 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

File Size 1,565.84K  /  98 Page

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    CYPRESS SEMICONDUCTOR CORP
Part No. CY7C1418AV18-267BZC
Description 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V

File Size 917.70K  /  27 Page

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    Alliance Semiconductor, Corp.
Part No. AS7C3256PFD18A-4TQC AS7C3256PFD16A-4TQC AS7C3256PFD18A AS7C3256PFD18A-3.5TQC AS7C3256PFD18A-3.8TQC AS7C3256PFD18A-5TQC AS7C3256PFD16A-5TQC AS7C3256PFD16A AS7C3256PFD16A-3.5TQC AS7C3256PFD16A-3.8TQC
Description 3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 100 MHz
256K X 18 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
256K X 16 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
3.3V 256K x 16/18 pipeline burst synchronous SRAM
3.3V 256K x 18 pipeline burst synchronous SRAM, 166 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 100 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 166MHz

File Size 163.16K  /  11 Page

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    FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. HGTP3N60A4D HGTP3N60A4D9A HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4
Description 600V, SMPS Series N-Channerl IGBT with Anti-Paralle Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 111.86K  /  9 Page

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    GS820322T-138 GS82032T-66 GS82032Q-150 GS82032Q-5I GS82032T-6I GS82032Q-117 GS82032Q-133 GS82032Q-133I GS82032Q-138 GS82

GSI Technology
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
Part No. GS820322T-138 GS82032T-66 GS82032Q-150 GS82032Q-5I GS82032T-6I GS82032Q-117 GS82032Q-133 GS82032Q-133I GS82032Q-138 GS82032Q-138I GS82032Q-4I GS82032T-117 GS82032T-100 GS82032T-4I GS82032T-5I GS82032Q-100 GS82032Q-6I GS82032Q-66 GS82032T-150 GS82032T-133 GS82032T-133I GS82032T-150I GS82032Q-150I GS82032T-138 GS82032T-138I
Description 66MHz 18ns 64K x 32 2M synchronous burst SRAM
PROGRAMMER UNIVERSAL 40-PIN
64K x 32 / 2M Synchronous Burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K的32 200万同步突发静态存储器
PROGRAMMER UNIV W/USB 48-PIN 64K的32 200万同步突发静态存储器
.56UF/100VDC METAL POLY CAP 64K的32 200万同步突发静态存储器
64K X 32 CACHE SRAM, 11 ns, PQFP100

File Size 764.38K  /  23 Page

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    GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I GS880F18T-14 GS880F18T-12I GS880F18T-11.5I GS880F18T-11I

GSI Technology, Inc.
Molex, Inc.
Part No. GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I GS880F18T-14 GS880F18T-12I GS880F18T-11.5I GS880F18T-11I
Description 8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器))
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100

File Size 314.19K  /  22 Page

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    HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A

INTERSIL[Intersil Corporation]
Part No. HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A
Description From old datasheet system
21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21 A, 1200 V, N-CHANNEL IGBT, TO-263AB

File Size 88.17K  /  7 Page

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