640mm pdf Datasheet P9 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : TBP210G GBJ15KU A1020 IDT7205 L7107 2D120 M16550 284976
	Product Description
	Full Text Search

640mm Datasheet PDF File

For 640mm Found Datasheets File :: 2325 Search Time::1.781ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SI4953DY
OCR Text	...ls ' ' ' ' 62 6\PERO W'66 W66 D' 6 6 * R $EVROXWH 0D[LPXP 5DWLQJV 9hvTprAWyhtr BhrTprAWyhtr 9hvA...40mm Intermediate container for 13" reel option F63TNR Label sample Barcode Label 193mm x 183...
Description	Dual P-Channel Enhancement Mode MOSFET
File Size	377.67K / 6 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BCR133S Q62702-C2376 BCR133SQ62702C2376
OCR Text	...-C2376 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base volt...40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-26-1996 BCR 133S Electrical...
Description	NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) NPN硅数字晶体管阵列（开关电路，逆变器，接口电路，驱动电路） TRANSISTOR DIGITAL SOT363 NPN Silicon Digital Transistor Array (Switching circuit/ inverter/ interface circuit/ driver circuit) From old datasheet system
File Size	43.87K / 4 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BCR133W Q62702-C2286 Q62702-C2255
OCR Text	... 10 0 0.0 0.2 0.4 0.6 V IC 1.0 V CEsat Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration) 10 2 10 1 mA m...
Description	From old datasheet system NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
File Size	34.76K / 4 Page	View it Online	Download Datasheet

				Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BCR133 Q62702-C2256
OCR Text	... 10 0 0.0 0.2 0.4 0.6 V IC 1.0 V CEsat Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration) 10 2 10 1 mA m...
Description	NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) From old datasheet system
File Size	35.30K / 4 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BCR166W
OCR Text	...00 nA A 155 70 V 0.3 0.8 1.4 6.2 0.11 k - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.4 VEB = 5 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA,...
Description	From old datasheet system PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
File Size	34.93K / 4 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BCR166 Q62702-C2339
OCR Text	...00 nA A 155 70 V 0.3 0.8 1.4 6.2 0.11 k - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.4 VEB = 5 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA,...
Description	From old datasheet system PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
File Size	35.46K / 4 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	BCR400R Q62702-C2479
OCR Text	...ent battery voltage VSmin 1.6 0.65 0.08 0.15 0.2 - V IB (NPN) < 0.5 mA Voltage drop (VS - VCE) Vdrop IC/IC IC/IC IC/IC %/K VS/VS hFE/hFE IC = 25 mA Change of IC versus hFE hFE > 50 Change of IC versus VS VS > 3 V ...
Description	From old datasheet system Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation)
File Size	90.56K / 7 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	BCR400W Q62702-C2481
OCR Text	...ent battery voltage VSmin 1.6 0.65 0.08 0.15 0.2 - V IB (NPN) < 0.5 mA Voltage drop (VS - VCE) Vdrop IC/IC IC/IC IC/IC %/K VS/VS hFE/hFE IC = 25 mA Change of IC versus hFE hFE > 50 Change of IC versus VS VS > 3 V ...
Description	From old datasheet system Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) ECONOLINE: REZ - Cost Effective- 1kVDC & 2kVDC Isolation- Custom Solutions Available- No Extern. Components Required- UL94V-0 Package Material- Efficiency to 85%
File Size	93.96K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IPB15N03L IPP15N03L 15N03L
OCR Text	...sion ID P- TO263 -3-2 30 12.6 42 P- TO220 -3-1 V m A * Logic Level * Low On-Resistance RDS(on) * Excellent Gate Charge x RDS(on) ...40mm40mm1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description	IPP15N03L OptiMOS Power MOSFET, 30V, TO-220, RDSon = 12.9mOhm, 42A, LL OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 12.9mOhm, 42A, LL OptiMOS Buck converter series OptiMOS Buck converter series
File Size	448.37K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG] http://
Part No.	IPD12N03L IPU12N03L
OCR Text	..., Tjmax=175C EAR dv/dt 10 6 kV/s Gate source voltage Power dissipation TC=25C VGS Ptot 20 100 V W Operating and storag...40mm40mm1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description	DDM43W2S OptiMOS Power MOSFET, 30V, TO251, RDSon = 10.4mOhm, 30A, LL OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL OptiMOS Buck converter series
File Size	151.83K / 8 Page	View it Online	Download Datasheet

For 640mm Found Datasheets File :: 2325 Search Time::1.781ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |