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International Rectifier, Corp.
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| Part No. |
IRLML6401TRPBF-1 IRLML6401PBF-1-15
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| OCR Text |
... starting t j = 25c, l = 3.5mh r g = 25 , i as = -4.3a. parameter min. typ. max. units conditions v (br)dss drain-to-source bre...9a -3.4a -4.3a
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| Description |
-12V Single P-Channel HEXFET Power MOSFET in a Micro 3 package Compatible with Existing Surface Mount Techniques
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| File Size |
200.80K /
8 Page |
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SamHop Microelectronics
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| Part No. |
STD616S STU616S
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| OCR Text |
...ting. c.starting t j =25 c,l=0.5mh,r g =25 ,i as =9a,v dd <v (br)dss .(see figure13) e.pulse test : pulse width < 1us,duty cycle < 1%. _ _ _ i s maximum continuous drain-source diode forward current 1.5 a v ds =30v,i d =8a,v gs =4.5v nc 1... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
140.93K /
8 Page |
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SamHop Microelectronics...
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| Part No. |
STM4446
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| OCR Text |
...ting. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13) _ _ _ 18 v gs =4.5v , i d =3.5a m ohm 19 26 nc 7.3 v ds =20v,i d =4.5a,v gs =4.5v
stm4446 ver 1.0 www.samhop.com.tw dec,14,2012 3 tj( c ) i d , drain current(a) v ds ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
117.50K /
7 Page |
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APEX[Apex Microtechnology]
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| Part No. |
PA13A PA13
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| OCR Text |
...M = 5A ILIM = 10A 50V 200F 125F 5mH 2.0mH 40V 500F 350F 15mH 3.0mH 35V 2.0mF 850F 50mH 5.0mH 30V 7.0mF 2.5mF 150mH 10mH 25V 25mF 10mF 500mH 20mH 20V 60mF 20mF 1,000mH 30mH 15V 150mF 60mF 2,500mH 50mH *If the inductive load is driven near st... |
| Description |
POWER OPERATIONAL AMPLIFIERS
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| File Size |
181.53K /
4 Page |
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it Online |
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