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  5mh.9a Datasheet PDF File

For 5mh.9a Found Datasheets File :: 109    Search Time::4.156ms    
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    IRLML6401 IRLML6401TR IRLML6401PBF

International Rectifier
Part No. IRLML6401 IRLML6401TR IRLML6401PBF
OCR Text ...e. Starting TJ = 25C, L = 3.5mH RG = 25, IAS = -4.3A. 2 www.irf.com IRLML6401 100 VGS -7.0V -5.0V -4.5V -3.0V -2.5V - 1.8V -...9A -3.4A BOTTOM -4.3A TOP -ID , Drain Current (A) 60 3.0 40 2.0 20 1.0 0.0 2...
Description -12V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
HEXFETPower MOSFET
4.3 A, 12 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET

File Size 138.86K  /  9 Page

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    International Rectifier, Corp.
Part No. IRLML6401TRPBF-1 IRLML6401PBF-1-15
OCR Text ... starting t j = 25c, l = 3.5mh r g = 25 , i as = -4.3a. parameter min. typ. max. units conditions v (br)dss drain-to-source bre...9a -3.4a -4.3a 0 ...
Description -12V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
Compatible with Existing Surface Mount Techniques

File Size 200.80K  /  8 Page

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    SamHop Microelectronics
Part No. STD616S STU616S
OCR Text ...ting. c.starting t j =25 c,l=0.5mh,r g =25 ,i as =9a,v dd <v (br)dss .(see figure13) e.pulse test : pulse width < 1us,duty cycle < 1%. _ _ _ i s maximum continuous drain-source diode forward current 1.5 a v ds =30v,i d =8a,v gs =4.5v nc 1...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 140.93K  /  8 Page

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    IRLI3615PBF

International Rectifier
Part No. IRLI3615PBF
OCR Text ... 11 ) Starting TJ = 25C, L = 9.5mH RG = 25, I AS = 8.4A. (See Figure 12) ISD 8.4A, di/dt 510A/s, VDD V(BR)DSS, TJ 175C. Pulse widt...9A 8.4A VDS L DRIVER 600 RG 20V D.U.T IAS tp + V - DD A 400 0.01 ...
Description HEXFET Power MOSFET

File Size 162.87K  /  8 Page

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    SamHop Microelectronics...
Part No. STM4446
OCR Text ...ting. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13) _ _ _ 18 v gs =4.5v , i d =3.5a m ohm 19 26 nc 7.3 v ds =20v,i d =4.5a,v gs =4.5v stm4446 ver 1.0 www.samhop.com.tw dec,14,2012 3 tj( c ) i d , drain current(a) v ds ...
Description Super high dense cell design for low RDS(ON).

File Size 117.50K  /  7 Page

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    2SK4195LS

Sanyo Semicon Device
Part No. 2SK4195LS
OCR Text ...ade of aluminium. *4 VDD=99V, L=5mH, IAV=4A *5 L5mH, single pulse Marking : K4195 Any and all SANYO Semiconductor Co.,Ltd. products descr...9A PW<10s Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 IT14088 1 10 0...
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications

File Size 51.63K  /  5 Page

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    2SK4099LS

Sanyo Semicon Device
Part No. 2SK4099LS
OCR Text ...2 Package limited *3 VDD=99V, L=5mH, IAV=8.5A *4 L5mH, single pulse Marking : K4099 Any and all SANYO Semiconductor Co.,Ltd. products des...9A PW10s 1 0 s 10 0 s 1m 10 s m 10 s 0m DC s op er ati on 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 I...
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications

File Size 48.15K  /  5 Page

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    VNQ830-E

ST Microelectronics
STMicroelectronics
Part No. VNQ830-E
OCR Text ...g Energy EMAX Ptot Tj Tstg (L=2.5mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=9A) Power dissipation (per island) at Tlead=25C Junction Operating Temperature Storage Temperature 140 6.25 Internally Limited - 55 to 150 mJ W C C Body Model: 4000 400...
Description QUAD CHANNEL HIGH SIDE DRIVER

File Size 236.20K  /  21 Page

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    APEX[Apex Microtechnology]
Part No. PA13A PA13
OCR Text ...M = 5A ILIM = 10A 50V 200F 125F 5mH 2.0mH 40V 500F 350F 15mH 3.0mH 35V 2.0mF 850F 50mH 5.0mH 30V 7.0mF 2.5mF 150mH 10mH 25V 25mF 10mF 500mH 20mH 20V 60mF 20mF 1,000mH 30mH 15V 150mF 60mF 2,500mH 50mH *If the inductive load is driven near st...
Description POWER OPERATIONAL AMPLIFIERS

File Size 181.53K  /  4 Page

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