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BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
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| Part No. |
BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV8021BI BS616UV8021DC BS616UV8021DI BS616UV8021FC
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| OCR Text |
...ndom Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS technology and circuit techniques provide both high spe... |
| Description |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
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| File Size |
212.98K /
12 Page |
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it Online |
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BRILLIANCE SEMICONDUCTOR, Inc.
BSI[Brilliance Semiconductor]
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| Part No. |
BS616UV8020BI BS616UV8020 BS616UV8020BC
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| OCR Text |
...ndom Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high spe... |
| Description |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
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| File Size |
204.80K /
11 Page |
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it Online |
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BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
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| Part No. |
BS616LV8025BI BS616LV8025 BS616LV8025BC
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| OCR Text |
...ndom Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high spe... |
| Description |
LM5022 60V Low Side Controller for Boost and SEPIC; Package: MINI SOIC; No of Pins: 10
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
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| File Size |
204.91K /
11 Page |
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it Online |
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BSI[Brilliance Semiconductor]
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| Part No. |
BS616LV8022BI BS616LV8022 BS616LV8022BC
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| OCR Text |
...ndom Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high spe... |
| Description |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
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| File Size |
208.00K /
11 Page |
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it Online |
Download Datasheet |
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IDT[Integrated Device Technology]
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| Part No. |
IDT72T18105 IDT72T18105L10BB IDT72T18105L10BBI IDT72T18105L4BB IDT72T18105L4BBI IDT72T18105L5BB IDT72T18105L5BBI IDT72T18105L6BB IDT72T18105L6BBI IDT72T18105L7BB IDT72T18105L7BBI IDT72T18115 IDT72T18115L10BB IDT72T18115L10BBI IDT72T18115L4BB IDT72T18115L4BBI IDT72T18115L5BB IDT72T18115L5BBI IDT72T18115L6BB IDT72T18115L6BBI IDT72T18115L7BB IDT72T18115L7BBI IDT72T18125 IDT72T18125L10BB IDT72T18125L10BBI IDT72T18125L4BB IDT72T18125L4BBI IDT72T18125L5BB IDT72T18125L5BBI IDT72T18125L6BB IDT72T18125L6BBI IDT72T18125L7BB IDT72T18125L7BBI IDT72T1855 IDT72T1855L10BB IDT72T1855L10BBI IDT72T1855L4BB IDT72T1855L4BBI IDT72T1855L5BB IDT72T1855L5BBI IDT72T1855L6BB IDT72T1855L6BBI IDT72T1855L7BB IDT72T1855L7BBI IDT72T1865 IDT72T1865L10BB IDT72T1865L10BBI IDT72T1865L4BB IDT72T1865L4BBI IDT72T1865L5BB IDT72T1865L5BBI IDT72T1865L6BB IDT72T1865L6BBI IDT72T1865L7BB IDT72T1865L7BBI IDT72T1875 IDT72T1875L10BB IDT72T1875L10BBI IDT72T1875L4BB IDT72T1875L4BBI IDT72T1875L5BB IDT72T1875L5BBI IDT72T1875L6BB IDT72T1875L6BBI IDT72T1875L7BB IDT72T1875L7BBI IDT72T1885 IDT72T1885L10BB IDT72T1885L10BBI IDT72T1885L4BB IDT72T1885L4BBI IDT72T1885L5BB IDT72T1885L5BBI IDT72T1885L6BB IDT72T1885L6BBI IDT72T1885L7BB IDT72T1
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| OCR Text |
... x 18/262,144 x 9, 262,144 x 18/524,288 x 9, 524,288 x 18/1,048,576 x 9 IDT72T18125
FEATURES:
*
* * * * * * * * * * * *
Choose among the following memory organizations: IDT72T1845 2,048 x 18/4,096 x 9 IDT72T1855 4,096 x 18/8,192... |
| Description |
2.5 VOLT HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS
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| File Size |
515.65K /
55 Page |
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it Online |
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BSI[Brilliance Semiconductor]
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| Part No. |
BS616LV8021AI BS616LV8021 BS616LV8021AC
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| OCR Text |
...ndom Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high spe... |
| Description |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
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| File Size |
203.09K /
11 Page |
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it Online |
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LAPIS SEMICONDUCTOR CO LTD
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| Part No. |
MSM56V16160D-12TS-K
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| OCR Text |
... msm56v16160d/dh is a 2-bank 524,288-word 16-bit synchronous dynamic ram, fabricated in oki's cmos silicon-gate process technology. the device operates at 3.3 v. the inputs and outputs are lvttl compatible. features ? silicon gate, qu... |
| Description |
1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
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| File Size |
376.49K /
31 Page |
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it Online |
Download Datasheet |
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OKI electronic componets
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| Part No. |
MSM538052E MSM538052E-XXGS-K MSM538052E-XXRS MSM538052E-XXTS-AK
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| OCR Text |
524,288-Words x 16-bit or 1,048,576-Bytes x 8-bit MaskROM 8Words x 16-Bit or 16Bytes x 8-Bit/Page Mode MASKROM
DESCRIPTION
The OKI MSM538052E is a 524,288-words x 16-bit or 1,048,576-Bytes x 8-bit CMOS Mask ROM with an asynchronous page... |
| Description |
524,288-Words x 16-bit or 1,048,576-Bytes x 8-bit MaskROM, 8Words x 16-Bit or 16Bytes x 8-Bit/Page Mode MASKROM
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| File Size |
95.16K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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