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  4.5-20v Datasheet PDF File

For 4.5-20v Found Datasheets File :: 41782    Search Time::2.234ms    
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    HMBT8050

HSMC[Hi-Sincerity Mocroelectronics]
Part No. HMBT8050
OCR Text ...mum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sale...5 Fax: 886-3-5982931 HMBT8050 HSMC Product Specification ...
Description NPN EPITAXIAL TRANSISTOR

File Size 29.39K  /  3 Page

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    HPN2907A PN2907A

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HPN2907A PN2907A
OCR Text 4 HPN2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HPN2907A is designed for general purpose amplifier and high speed, medium...5 V IC Collector Current ..............................................................................
Description PNP EPITAXIAL PLANAR TRANSISTOR

File Size 36.46K  /  4 Page

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    IR2110E6

IRF[International Rectifier]
Part No. IR2110E6
OCR Text ...e (HIN, LIN & SD) Min. VS + 10 -4 VS 10 0 VSS + 5 -5 VSS Max. VS + 20 600 VB 20 VCC VSS + 20 5 VDD Units V Dynamic Electrical Characteristics VBIAS (VCC , VBS, VDD) = 15V, and V SS = COM unless otherwise specified. The dynamic electr...
Description HIGH AND LOW SIDE DRIVER

File Size 306.76K  /  14 Page

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    IR2110L6

IRF[International Rectifier]
Part No. IR2110L6
OCR Text ...IN, LIN & SD) Min. VS + 10 -4 VS 10 0 VSS + 5 -5 V SS Max. VS + 20 600 VB 20 VCC VSS + 20 5 VDD Units V Dynamic Electrical Characteristics VBIAS (VCC , VBS, VDD ) = 15V, and VSS = COM unless otherwise specified. The dynami...
Description HIGH AND LOW SIDE DRIVER

File Size 337.18K  /  14 Page

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    IR2110L

IRF[International Rectifier]
Part No. IR2110L
OCR Text ...oltage (HIN, LIN & SD) VS + 10 -4 VS 10 0 VSS + 5 -5 VSS VS + 20 400 VB 20 VCC VSS + 20 5 VDD V Dynamic Electrical Characteristics VBIAS (VCC , VBS, VDD) = 15V, and VSS = COM unless otherwise specified. The dynamic electrical characteri...
Description HIGH AND LOW SIDE DRIVER

File Size 131.31K  /  14 Page

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    IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF

International Rectifier
Part No. IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF
OCR Text ...1: Logic operational for VS of -4 to +500V. Logic state held for VS of -4V to -VBS. (Please refer to the Design Tip DT97-3 for more details)...5 -- -- -- -- -- -- -- -- -- 7.5 7.0 7.4 7.0 2.0 2.0 -- -- -- -- -- 125 180 15 20 -- 8.6 8.2 8.5 8.2...
Description HIGH AND LOW SIDE DRIVER

File Size 218.79K  /  16 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...commodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mou...5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 3210 --- VGS = 0V 690 --- VD...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...3 srew Max. 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Th...5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 3210 --- VGS = 0V 690 --- VD...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...commodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mou...5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact S 3210 --- VGS = 0V 690 --- ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...= 1mA 11 m VGS = 10V, ID = 43A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 43A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = ...5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 3210 --- VGS = 0V 690 --- VD...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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