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Everlight Electronic Co., Ltd.
EVERLIGHT[Everlight Electronics Co., Ltd]
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| Part No. |
PT2646B PT264-6B
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| OCR Text |
...e lead emerge from the package. 4.Lens colorBlack. 5.Above specification may be changed without notice. EVERLIGHT will reserve authority on ...1mW/cm2 VCE=5V IC=1mA RL=1000 VCE=20V Ee=0mW/cm2 VCE=5V Ee=1mW/cm2 -------
5
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V... |
| Description |
3mm Phototransistor
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| File Size |
219.41K /
7 Page |
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it Online |
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Sharp Electrionic Compo...
SHARP[Sharp Electrionic Components]
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| Part No. |
PT483F1 PT481 PT481F
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| OCR Text |
... at E e = 0.1mW/cm 2 ) : PT481F 4. Visible light cut-off type : PT481F/PT483F1 5. Long lead pin type : PT483F1
Narrow Acceptance High Sensitivity Phototransistor
s Outline Dimensions
PT481/PT481F 1.5 2 - C0.5 Rest of gate 0.3MAX. 3.0 D... |
| Description |
Narrow Acceptance High Sensitivity Phototransistor
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| File Size |
66.18K /
4 Page |
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it Online |
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Sharp Corporation
SHARP[Sharp Electrionic Components]
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| Part No. |
PT493F PT491 PT491F PT493
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| OCR Text |
...diate acceptance ( : TYP. 40 ) 4. Long lead pin type : PT493/PT493F 5. Visible light cut-off type : PT491F / PT493F
Intermediate Accepta...1mW/cm2 VCE = 2V, I C = 5mA RL = 100 MIN. 0.3 0.2 TYP. 0.6 0.4 800 860 80 70 40 MAX. 1.3 0.8 10- 6 ... |
| Description |
Intermediate Acceptance High Sensitivity Phototransistor
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| File Size |
65.65K /
4 Page |
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it Online |
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ISOCOM
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| Part No. |
IS659D
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| OCR Text |
...3.0 3.0 2.8 0.3 max r 0.8 c 0.5 4.0 0.8 max 16.5 min 0.5 min 2.54 1.7 1.15 1.5 0.75 60 0.15 0.4 r 0.5 0.8 1.4 0.45 0.8 2 2 1 1 isocom inc 1...1mw/cm 2 collector-emitter saturation voltage v ce(sat) 1.0 v i c = 1.5ma, ee = 1mw/cm 2 rise time ... |
| Description |
Side looking detector photodarlington output
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| File Size |
38.10K /
3 Page |
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it Online |
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Everlight Electronic Co., Ltd.
EVERLIGHT[Everlight Electronics Co., Ltd]
http://
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| Part No. |
PT6721TR8 PT6721B PT67-21B PT6721C2 PT67-21C2 PT67-21L41 PT67-21TR8 PT6721L41
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| OCR Text |
... 3.Lens colorBlack transparent. 4.Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for...1mW/c VCE=5V IC=1mA RL=1000
Ee=0mW/c VCE=20V Ee=1mW/c VCE=5V -------
EVERLIGHT ELECTRONICS CO... |
| Description |
high speed silicon NPN epitaxial planar phototransistor in a compact surface-mountable package.
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| File Size |
162.03K /
8 Page |
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it Online |
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Everlight Electronic Co., Ltd.
EVERLIGHT[Everlight Electronics Co., Ltd]
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| Part No. |
PT9121B PT91-21B
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| OCR Text |
...0 min. R0.8 0.1
1.1 0.1
1.4 0.1
7.0 min.
0.650.1 0.150.05
1.3 0.1 1.4 0.1
0.40.1
0.750.1
Notes :
1.All dimensions ar...1mW/c VCE=5V IC=1mA RL=1000 Ee=0mW/c VCE=20V Ee=1mW/c VCE=5V -------
EVERLIGHT ELECTRONICS CO., L... |
| Description |
1.9mm Round Subminiature Axial Phototransistor 1.9毫米回合微型轴流式光电晶体管
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| File Size |
182.94K /
7 Page |
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Everlight Electronic Co., Ltd.
EVERLIGHT[Everlight Electronics Co., Ltd]
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| Part No. |
PT9121TR7 PT9121C PT91-21C PT91-21TR7
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| OCR Text |
...0.2
R0.8 0.1
1.1 0.1
1.4 0.1
0.65 0.1
1.3 0.1 1.4 0.1
0.15 0.05
0.8 +0.13 -0
0.3 0.1
0.75 0.1
1.All di...1mW/c V=5V I=1mA R=1000 E=0mW/c V=20V E=1mW/c V=5V -------
... |
| Description |
1.9mm Round Subminiature
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| File Size |
241.82K /
7 Page |
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it Online |
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RFMD[RF Micro Devices]
RF Micro Devices, Inc.
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| Part No. |
RF2909
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| OCR Text |
...CMOS
Q SIG 1 Q REF 2 GND1 3 NC 4 LO IN+ 5 LO IN- 6 NC 7
Si BJT
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
* 2.7V to 5V Power Supply * 1mW, 10mW, 70mW Digital Output Power * 20dB Analog Power Control Range * Excellent Phase... |
| Description |
3V 915MHZ SPREAD-SPECTRUM TRANSMITTER IC
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| File Size |
156.02K /
8 Page |
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it Online |
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ROHM[Rohm]
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| Part No. |
RLD78NZH1
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| OCR Text |
...t package.(5.6mm) 3) Low droop. 4) Can be driven by single power supply (N type).
External dimensions (Unit : mm)
902
Equivalent circ...1mW)
PO=3mW
Im
//
0.2
8
25
-
- -100
0.45
11
30
-
- -
0.9
15
38
2
3 +100
... |
| Description |
AlGaAs laser diodes
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| File Size |
74.66K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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