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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ... seconds Max. 57 40 180 3.8 200 1.3 20 530 28 20 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Therma...3000 640 330 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...conds Max. -74 -52 -260 3.8 200 1.3 20 930 -38 20 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Ther...3000 8 2000 C rs s 4 1000 0 1 10 100 A 0 0 40 80 FOR TE ST C IR C U IT SE...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ... M3 screw Max. -74 -52 -260 200 1.3 20 930 -38 20 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A ...3000 8 2000 C rs s 4 1000 0 1 10 100 A 0 0 40 80 FOR TE ST C IR C U IT SE...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ... 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance V...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ...SOURCE 300 ON RESISTANCE () 250 200 150 100 50 0 0 -20 -40 -60 -80 -100 ID, DRAIN CURRENT (A) VGS = - 20V VGS = -10V NORMALIZED DRAIN TO SOU...3000 CISS 2000 COSS 1000 CRSS 0.95 0.85 0.75 -40 0 40 80 120 160 0 0 ...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ...amped Inductive Test Circuit 200 0 25 50 75 100 125 150 A 175 IAS S tarting T J , J unc tion T em perature (C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ... Inductive Test Circuit IAS 200 0 25 50 75 100 125 150 A 175 S tarting T J , J unc tion T em perature (C ) tp V (BR)DSS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Curre...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

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    LBAT54C LBAT54CLT1

LRC[Leshan Radio Company]
Part No. LBAT54C LBAT54CLT1
OCR Text ... 2.0 0.24 0.5 0.8 5.0 0.32 0.40 200 300 600 Unit Volts pF Adc Vdc Vdc Vdc ns Vdc Vdc mAdc mAdc mAdc LBAT54CLT1-1/2 LESHAN RADIO COMPANY, LTD. LBAT54CLT1 820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSC...
Description Dual Series Schottky Barrier Diodes

File Size 100.45K  /  3 Page

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    M2732A 2377 M2732A-20F1 M2732A-2F6 M2732A-3F1 M2732A-4F1 M2732A-4F6 M2732A-2F1 M2732AF1 M2732AF6 M2732A-20F6 M2732A-25F1

SGS Thomson Microelectronics
STMicroelectronics
意法半导
Part No. M2732A 2377 M2732A-20F1 M2732A-2F6 M2732A-3F1 M2732A-4F1 M2732A-4F6 M2732A-2F1 M2732AF1 M2732AF6 M2732A-20F6 M2732A-25F1 M2732A-25F6 M2732A-3F6
OCR Text ...pply and with an access time of 200 ns, is ideal suited for applications where fast turn around and pattern experimentation one important re...3000-4000 A range. Research shows that constant exposure to room level fluorescent lighting could er...
Description NMOS 32K (4K x 8) UV EPROM, 250ns
From old datasheet system
NMOS 32K 4K x 8 UV EPROM
NMOS 32K (4K x 8) UV EPROM(NMOS 32K紫外线擦除EPROM)

File Size 91.33K  /  9 Page

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    MAXIM - Dallas Semiconductor
Maxim Integrated Products Inc
Part No. MAX232E MAX232ECPE MAX232ECSE MAX232ECWE MAX232EEPE MAX232EESE MAX232EEWE MAX213ECAI MAX213ECWI MAX213EEAI MAX213EEWI MAX206ECAG MAX206ECNG MAX206ECWG MAX206EEAG MAX206EENG MAX206EEWG MAX211ECAI MAX211ECWI MAX211EEAI MAX211EEWI MAX241ECAI MAX241ECWI MAX241EEAI MAX241EEWI MAX205ECPG MAX205EEPG MAX207ECAG MAX207ECNG MAX207ECWG MAX207EEAG MAX207EENG MAX207EEWG MAX202E MAX202ECPE MAX202ECSE MAX202ECWE MAX202EEPE MAX202EESE MAX202EEWE MAX208E MAX208ECAG MAX208ECNG MAX208ECWG MAX208EEAG MAX208EENG MAX208EEWG MAX203ECPP MAX203ECWP MAX203EEPP MAX203EEWP MAX213E
OCR Text ... - 0.4 0.05 10 2.0 2.4 0.4 V 15 200 10 0.8 A A V TA = +25C, Figure 1 MAX211E/241E MAX213E 8 11 14 5 7 1 1 15 15 20 20 10 15 10 10 50 A mA SY...3000 4000 5000 LOAD CAPACITANCE (pF) 5.0 0 V CC = 5.5V ALL TRANSMITTERS LOADED DATA RATE = 120kbps R...
Description -15kV ESD-protected, 5V RS-232 transceiver
15kV ESD-Protected 5V RS-232 Transceivers
±15kV ESD-Protected, 5V RS-232 Transceivers

File Size 262.86K  /  24 Page

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