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  2.8a 28.5v Datasheet PDF File

For 2.8a 28.5v Found Datasheets File :: 2830    Search Time::2.188ms    
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    HT1137A 1137A

Holtek Semiconductor In...
HOLTEK[Holtek Semiconductor Inc]
Part No. HT1137A 1137A
OCR Text ...s through to the next stage. 2 19th Nov '98 HT1137A * When the speed is higher than 100, press the Hi-Lo key to change the l...8a 8f 7a 7f 6b,c Hi -- -- -- COM3 SEGMENT SEG22 SEG21 SEG20 SEG19 SEG18 SEG17 SEG16 SEG15 SEG14 ...
Description Motorcycle LCD Game
From old datasheet system

File Size 355.13K  /  11 Page

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    NDT014L

FAIRCHILD[Fairchild Semiconductor]
Part No. NDT014L
OCR Text ...sients are needed. Features 2.8 A, 60 V. RDS(ON) = 0.2 @ VGS = 4.5 V RDS(ON) = 0.16 @ VGS = 10 V. High density cell design for extreme...8A DRAIN-SOURCE ON-RESISTANCE V 1.75 GS = 4.5V TJ = 125C DRAIN-SOURCE ON-RESISTANCE ...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 228.00K  /  10 Page

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    NTE2933

NTE Electronics
Part No. NTE2933
OCR Text ...e Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 549mJ Avalanche Current ...8A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 23.33K  /  3 Page

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    NTE2935 NTE2933

NTE[NTE Electronics]
Part No. NTE2935 NTE2933
OCR Text ...e Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 641mJ Avalanche Current ...8A, di/dt 160A/s, VDD V(BR)DSS, Starting TJ = +25C. Electrical Characteristics: (TC = +25C unle...
Description 30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 23.32K  /  3 Page

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    NTE53

NTE[NTE Electronics]
Part No. NTE53
OCR Text ...meter OFF Characteristics (Note 2) Collector-Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0 VCEX(sus) IC = 8A, Vclamp = 450V, TC = +100C IC = 15A, Vclamp = 300V, TC = +100C Collector Cutoff Current ICEV VCEV = 850V, VBE(off) = 1.5V...
Description Silicon NPN Transistor High Voltage, High Speed Switch

File Size 25.84K  /  3 Page

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    SM4T10C SM4T10CA SM4T12C SM4T12CA SM4T30A SM4T6V8C SM4T6V8A SM4T6V8 SM4T68CA SM4T68C SM4T7V5A SM4T7V5 SM4T100A 3081 SM4T

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. SM4T10C SM4T10CA SM4T12C SM4T12CA SM4T30A SM4T6V8C SM4T6V8A SM4T6V8 SM4T68CA SM4T68C SM4T7V5A SM4T7V5 SM4T100A 3081 SM4T10A SM4T7V5CA SM4T10 SM4T100 SM4T100C SM4T100CA SM4T12 SM4T12A SM4T15 SM4T150 SM4T150A SM4T150C SM4T150CA SM4T15A SM4T15C SM4T15CA SM4T18 SM4T18A SM4T18C SM4T18CA SM4T200 SM4T200A SM4T200C SM4T200CA SM4T22 SM4T220 SM4T220A SM4T220C SM4T220CA SM4T22A SM4T22C SM4T22CA SM4T24 SM4T24A SM4T24C SM4T24CA SM4T27 SM4T27A SM4T27C SM4T27CA SM4T30 SM4T30C SM4T30C4 SM4T33 SM4T33A SM4T33C SM4T33CA SM4T36 SM4T36A SM4T36C SM4T36CA SM4T39 SM4T39C SM4T68 SM4T68A SM4T6V220 SM4T6V220A SM4T6V220C SM4T6V220CA SM4T6V8CA SM4T7V5C -SM4T24CA -SM4T30C4 -SM4T36C
OCR Text ... 5 5.8 5.8 6.4 6.4 8.55 8.55 10.2 10.2 12.8 12.8 15.3 15.3 18.8 18.8 20.5 20.5 23.1 23.1 25.6 25.6 28.2 28.2 30.8 30.8 33.3 33.3 6.45 6.45 7...8A 100 Tj = 25C f = 1 MHz SM4T6V8CA Figure 4b : Capacitance versus reverse applied voltage for b...
Description TRANSIL
From old datasheet system

File Size 124.51K  /  7 Page

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    FDS9933A

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS9933A
OCR Text 2.5V Specified PowerTrenchTM MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor'...8A V GS = -4 .5V R D S(ON) , ON-RESISTA NCE (OHM ) I D = -2.0 A 0.2 1 .2 0.15 1 0...
Description Dual N-Channel 2.5V Specified PowerTrench MOSFET

File Size 190.13K  /  8 Page

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    HD45H11

Hi-Sincerity Mocroelect...
HSMC[Hi-Sincerity Mocroelectronics]
HI-SINCERITY MICROELECTRONICS, CORP.
Part No. HD45H11
OCR Text 2 HD45H11 PNP EPITAXIAL PLANAR TRANSISTOR Description The HD45H11 is designed for various specific and general purpose applications,...8A, IB=-0.8A IC=-8A, IB=-0.8A IC=-250mA, VCE=-1V IC=-2A, VCE=-1V IC=-4A, VCE=-1V VCB=-10V VCE=-1V, I...
Description PNP EPITAXIAL PLANAR TRANSISTOR 进步党外延平面晶体管

File Size 22.80K  /  2 Page

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    HM1-65642883 HM4-65642883 HM-65642883 HM4-65642B883 FN3004 HM1-65642_883 HM1-65642B_883 HM1-65642B883 HM1-65642C_883 HM1

INTERSIL[Intersil Corporation]
Part No. HM1-65642883 HM4-65642883 HM-65642883 HM4-65642B883 FN3004 HM1-65642_883 HM1-65642B_883 HM1-65642B883 HM1-65642C_883 HM1-65642C883 HM4-65642_883 HM4-65642B_883 HM-65642 HM-65642_883 HM1-65642/883 HM1-65642B/883 HM4-65642B/883 HM1-65642C/883
OCR Text ...r the Provisions of Paragraph 1.2.1. * Full CMOS Design * Six Transistor Memory Cell * Low Standby Supply Current . . . . . . . . . . . . . ...8A, 8B -55oC TA +125oC - - - PARAMETERS Read/Write/ Cycle Time Address Access Time ...
Description From old datasheet system
8K x 8 Asynchronous CMOS Static RAM
RES,Metal Film,100KOhms,500WV,1 /-% Tol,-50,50ppm-TC

File Size 76.50K  /  9 Page

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    IRF7103 IRF7103TR IRF7103N

International Rectifier
Part No. IRF7103 IRF7103TR IRF7103N
OCR Text ... G2 1 8 D1 D1 D2 D2 2 7 VDSS = 50V RDS(on) = 0.130 ID = 3.0A 3 6 4 5 Top View Description Fourth Genera...8A, di/dt 90A/s, VDD V(BR)DSS , TJ 150C Surface mounted on FR-4 board, t 10sec. IRF7103 ...
Description Power MOSFET(Vdss=50V/ Rds(on)=0.130ohm/ Id=3.0A)
Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A)
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package

File Size 165.28K  /  9 Page

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