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HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC-C044
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| OCR Text |
...
+11dBm +13dBm +15dBm +17dBm +19dbm
-20 13 14 15 16 17 18 19 RF FREQUENCY (GHz)
-15 13 14 15 16 17 18 19 20 21 22 23 24 FREQUENCY (GHz)
Input P1dB vs. Temperature
22 20 18 16 P1dB (dBm)
Input IP3 vs. LO Drive
30 25 20 IP3 (d... |
| Description |
GaAs MMIC I/Q MIXER MODULE 15 - 23 GHz
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| File Size |
318.43K /
6 Page |
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HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC400MS8
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| OCR Text |
...m LO = +16dBm LO = +17dBm LO = +19dbm
-20 -25
-15
-20 1.7 1.8 1.9 2 2.1 RF FREQUENCY (GHz) 2.2 2.3
-30 1.7 1.8 1.9 2 2.1 RF FREQUENCY (GHz) 2.2 2.3
Upconverter Performance Conversion Gain @ LO = +17 dBm
0
If Bandwidth @ L... |
| Description |
HIGH IP3 GaAs MMIC MIXER, 1.7 - 2.2 GHz
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| File Size |
215.50K /
6 Page |
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HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC402MS8
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| OCR Text |
...m LO = +16dBm LO = +17dBm LO = +19dbm
-15
RF LO
-15
-20
-20 1.7 1.8 1.9 2 2.1 RF FREQUENCY (GHz) 2.2 2.3
-25 1.5 1.75 2 2.25 RF FREQUENCY (GHz) 2.5
IF Bandwidth @ LO = +17 dBm
0
CONVERSION GAIN RETURN LOSS (dB)
Uncon... |
| Description |
HIGH IP3 GaAs MMIC MIXER, 1.8 - 2.2 GHz
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| File Size |
206.88K /
6 Page |
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it Online |
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MINI[Mini-Circuits]
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| Part No. |
LAVI-9VH_ LAVI-9VH
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| OCR Text |
...ower
LAVI-9VH+
(LO Power +19dbm) 820 to 870 MHz
Features
-45C to 85C -55C to 100C +22 dBm +24 dBm
Maximum Ratings
* * * * * * * *
Pin Connections
LO RF IF GROUND
10 2 14
RoHS compliant very high IP3, 36 dBm typ. 1 dB... |
| Description |
Frequency Mixer
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| File Size |
236.86K /
2 Page |
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Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LMA208C
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| OCR Text |
...on power output of greater than 19dbm. The LMA208C is designed for use as wideband driver amplifer in ECM (Electronic Counter-Measure) and commercial communication system applications. Ground is provided to the circuitry through vias to the... |
| Description |
2-26 GHz PHEMT Amplifier
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| File Size |
95.96K /
3 Page |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LMA208G
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| OCR Text |
19dbm 1-dB Gain Compression Power 15dB Input/Output Return Loss Typical 2-26GHz Frequency Bandwidth DC Decoupled RF Input and Output Chip Size : 1.986mmX1.082mm (.078"X.043") Chip Thickness : 100m 2 Pad Dimension : 100m
2-26GHz PHEMT Amp... |
| Description |
2-26GHz PHEMT Amplifier
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| File Size |
158.51K /
4 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5506E-LQ LX5506E LX5506ELQ
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| OCR Text |
... Total Current ~ 200mA for Pout=19dbm at 5.25GHz P1dB > +26dBm Power Gain ~ 23dB at 5.25GHz & Pout=19dbm EVM ~ 3% for 64QAM/ 54Mbps & Pout=19dbm Integrated Power Detectors On-Chip Input Match Simple Output Match Minimal External Components ... |
| Description |
Wireless LAN Power Amplifier
InGaP HBT 4 ?6GHz Power Amplifier
InGaP HBT 4 - 6GHz Power Amplifier
InGaP HBT 4 6GHz Power Amplifier
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| File Size |
313.83K /
7 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5512BLQ LX5512B LX5512BLQTR
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| OCR Text |
... Gain ~ 32 dB at 2.45GHz & Pout=19dbm Total Current ~140mA for Pout=19dbm at 2.45 GHz OFDM EVM ~3 % for 64QAM/ 54Mbps & Pout=19dbm Small Footprint: 3x3mm2 Low Profile: 0.9mm
APPLICATIONS
The LX5512B is a power amplifier optimized for WL... |
| Description |
InGaP HBT 2.4 2.5 GHz Power Amplifier
InGaP HBT 2.4-2.5 GHz power amplifier.
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
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| File Size |
173.40K /
6 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5512E-LQ LX5512E
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| OCR Text |
...Gain ~34dB @ 2.45GHz and Pout = 19dbm Total Current 130mA for Pout = 19dbm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dbm Small Footprint (3 x 3 mm2) Low Profile (0.9mm)
APPLICATIONS
The LX5512E is a power amplifier optim... |
| Description |
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
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| File Size |
218.63K /
10 Page |
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it Online |
Download Datasheet |
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Price and Availability
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