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  176-output Datasheet PDF File

For 176-output Found Datasheets File :: 9234    Search Time::8.094ms    
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    AN8837SB

Panasonic Corporation
Panasonic Semiconductor
Part No. AN8837SB
OCR Text ... 0.5 mV dB dB dB dB dB dB 176 mV[p-p] 0.4 -18 0.4 V V VNRF-H VCC = 3 V, f = 500 kHz VNRF-L VCC = 3 V, f = 500 kHz mV V V A V V...output impedance ENV amp. operation ENV amp. no-operation RF amplification RF-amp. output impedance ...
Description Low power consumption CD-DA head amplifier IC for 3-beam system optical pick-up

File Size 68.71K  /  7 Page

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    AN8839 AN8839NSB

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. AN8839 AN8839NSB
OCR Text ... - 0.6 1.0 mV dB dB dB A 176 mV[p-p] 0.4 -11 0.4 V V VNRF-H VCC = 3 V, f = 500 kHz VNRF-L VCC = 3 V, f = 500 kHz mV V V A V V VBDO-H f = 5 kHz, 170 mV[p-p], VCC = 3 V VBDO-L f = 5 kHz, 170 mV[p-p], VCC = 3 V 1.87 0.4 ...
Description DIODE ZENER TRIPLE ISOLATED 200mW 20Vz 6.2mA-Izt 0.05 0.1uA-Ir 15 SOT-363 3K/REEL
CD-DA head amplifier IC for 3-beam system optical pick-up

File Size 62.80K  /  7 Page

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    APT5010JFLL

ADPOW[Advanced Power Technology]
Part No. APT5010JFLL
OCR Text ...T CE MA AN OR DV NF A I 500 44 176 30 40 440 3.52 300 44 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ ...Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5010JFLL Test Conditions...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 53.49K  /  2 Page

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    APT5010JLC

Advanced Power Technology Ltd.
Part No. APT5010JLC
OCR Text ...ED AT NC RM VA FO AD IN 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ ...Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5010JLC Test Conditions ...
Description POWER MOS VI 500V 44A 0.100 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT5010JLL

ADPOW[Advanced Power Technology]
Part No. APT5010JLL
OCR Text ...T CE MA AN OR DV NF A I 500 44 176 30 40 440 3.52 300 44 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ ...Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5010JLL Test Conditions ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 51.35K  /  2 Page

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    APT5010JVFR

ADPOW[Advanced Power Technology]
Part No. APT5010JVFR
OCR Text ...0JVFR UNIT Volts Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient To...Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5010JVFR Test Conditions...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.63K  /  4 Page

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    APT5010JVRU2

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU2
OCR Text ...JVRU2 UNIT Volts Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current G...Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5010JVRU2 Test Condition...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 110.72K  /  7 Page

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    APT5010JVRU3

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU3
OCR Text ...JVRU3 UNIT Volts Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current G...Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5010JVRU3 Test Condition...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 111.65K  /  7 Page

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    APT5010JVR

Advanced Power Technolo...
Advanced Power Technology, Ltd.
Part No. APT5010JVR
OCR Text ...10JVR UNIT Volts Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient To...Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5010JVR Test Conditions ...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 71.26K  /  4 Page

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    APT8015JVFR APT8015

http://
ADPOW[Advanced Power Technology]
Part No. APT8015JVFR APT8015
OCR Text ...5JVFR UNIT Volts Amps 800 44 176 30 40 700 5.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current G...Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT8015JVFR Test Conditions...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 44A 0.150 Ohm

File Size 77.92K  /  4 Page

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For 176-output Found Datasheets File :: 9234    Search Time::8.094ms    
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