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  100-120v Datasheet PDF File

For 100-120v Found Datasheets File :: 3777    Search Time::1.594ms    
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    APT6035 APT6035AVR

ADPOW[Advanced Power Technology]
Part No. APT6035 APT6035AVR
OCR Text ... Switching * Lower Leakage * 100% Avalanche Tested * Popular TO-3 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD...120V VDS=300V 12 VDS=480V 8 16 TJ =+150C 10 5 TJ =+25C 4 50 100 150 200 250 300 Qg, T...
Description POWER MOS V 600V 16A 0.350 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 62.28K  /  4 Page

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    APT6037HVR

ADPOW[Advanced Power Technology]
Part No. APT6037HVR
OCR Text ... Switching * Lower Leakage * 100% Avalanche Tested * Popular TO-258 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM ...120V VDS=300V 12 VDS=480V 8 16 TJ =+150C 10 5 TJ =+25C 4 50 100 150 200 250 300 Qg, T...
Description POWER MOS V 600V 15.5A 0.370 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.63K  /  4 Page

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    APT6040 APT6040BN APT6045BN

ADPOW[Advanced Power Technology]
Part No. APT6040 APT6040BN APT6045BN
OCR Text ...hms RDS(ON) 0.45 250 1000 100 2 4 A nA Volts IDSS IGSS VGS(TH) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = ...120V DS 16 =320V DS V =480V DS 12 T = +150C J T = +25C J 8 4 40 80 120 160 2...
Description POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 50.59K  /  4 Page

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    APT6045BVR

ADPOW[Advanced Power Technology]
Part No. APT6045BVR
OCR Text ... Switching * Lower Leakage * 100% Avalanche Tested * Popular TO-247 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM ...120V VDS=300V TJ =+150C 10 5 TJ =+25C 12 VDS=480V 8 1 .5 4 50 100 150 200 250 Qg, ...
Description POWER MOS V 600V 15A 0.450 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 62.90K  /  4 Page

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    APT6045CVR APT5024BVFR

ADPOW[Advanced Power Technology]
Part No. APT6045CVR APT5024BVFR
OCR Text ... Switching * Lower Leakage * 100% Avalanche Tested * Popular TO-254 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM ...120V VDS=300V TJ =+150C 10 5 TJ =+25C 12 VDS=480V 8 1 .5 4 50 100 150 200 250 Qg, ...
Description POWER MOS V 600V 11.8A 0.450 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.69K  /  4 Page

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    APT6045SVR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT6045SVR
OCR Text ... Switching * Lower Leakage * 100% Avalanche Tested * Surface Mount D3PAK Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS ...120V VDS=300V TJ =+150C 10 5 TJ =+25C 12 VDS=480V 8 1 .5 4 50 100 150 200 250 Qg, ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 600V 15A 0.450 Ohm

File Size 65.63K  /  4 Page

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    CT1815 CT1815FP

Aeroflex Inc.
AEROFLEX[Aeroflex Circuit Technology]
Part No. CT1815 CT1815FP
OCR Text ... 20 45 2.75 97 45 47 47 50 3.25 100 40 40 40 35 ns ns ns ns ns ns 30 55 3.75 103 65 65 53 2.0 2.0 350 150 20 55 80 ns ns V ns ns...120V AC 60Hz common mode signal Environmental Parameters Operating Temperature -55C to +100C Case St...
Description CT1815 10MHz Low Level Serial Interface for MIL-STD-1397 Type D

File Size 80.95K  /  7 Page

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    FZT605 FZT605TC

Diodes Incorporated
Diodes Inc.
ZETEX[Zetex Semiconductors]
Part No. FZT605 FZT605TC
OCR Text ...1.2 1.0 0.8 0.6 0.4 0.2 0 IC/IB=100 hFE - Gain normalised to 1 Amp -55C +25C +100C +175C 2.5 2.0 1.5 1.0 0.5 -55C +25C +100C VCE=5V 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC - Collector Current (Amps)...
Description SOT223 NPN SILICON PLANAR MEDIUM
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

File Size 74.01K  /  2 Page

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    FZT851 FZT853

Zetex Semiconductors
Diodes Incorporated
Part No. FZT851 FZT853
OCR Text ...6 20 6 3 -55 to +150 FZT853 200 100 6 10 UNIT V V V A A W C *The power which can be dissipated assuming the device is mounted in a typica...120V V CB=120V, T amb=100C V CB=120V V CB=120V, T amb=100C V EB=6V I C=0.1A, I B=5mA* I C=1A, I B=50...
Description    NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
SOT223 NPN SILICON PLANAR HIGH CURRENT

File Size 52.84K  /  3 Page

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    NTE194

NTE[NTE Electronics]
Part No. NTE194
OCR Text ...A, RS = 1k, f = 10Hz to 15.7kHz 100 - - 50 - - - - - - 300 6 20 200 8.0 dB MHz pF pF 80 80 30 - - - - - - - - - - - - 250 - 0.15 0.20 1.0 1.0 V V V V Symbol Test Conditions Min Typ Max Unit Note 2 Pulse Test: Pulse Width = 300s, Duty Cyc...
Description Silicon NPN Transistor Audio Power Amplifier

File Size 21.65K  /  2 Page

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