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    70287-1239 0702871239

Molex Electronics Ltd.
Part No. 70287-1239 0702871239
OCR Text ... active description: 2.54mm (.100") pitch c-grid? header, breakaway, dual row, vertical, with retention pin, 90 circ...pk-70873-0353 ckts material number ckts material number 04 70287-1000 54 70287-1025 06...
Description 2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 90 Circuits, 6.10mm (.240) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective

File Size 308.23K  /  6 Page

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    BC847BDW1T1 BC847BDW1T1G BC846BDW1T1 BC848CDW1T1 BC847BDW1 BC848CDW1

ONSEMI[ON Semiconductor]
Part No. BC847BDW1T1 BC847BDW1T1G BC846BDW1T1 BC848CDW1T1 BC847BDW1 BC848CDW1
OCR Text ...EO VCBO VEBO IC BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc 1xm 1 1x = Specific Device Code x = B, ...pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 1.0 10 100 t, TIME (ms) 1.0 k 10 k 100 k 1.0 M ...
Description Dual General Purpose Transistors 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%

File Size 106.50K  /  6 Page

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    70287-1198

Molex Electronics Ltd.
Part No. 70287-1198
OCR Text ... active description: 2.54mm (.100") pitch c-grid? header, breakaway, dual row, vertical, with retention pin, 8 circu...pk-70873-0353 ckts material number ckts material number 04 70287-1000 54 70287-1025 06...
Description 2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 8 Circuits, 6.10mm (.240) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective

File Size 308.36K  /  6 Page

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    70287-1197

Molex Electronics Ltd.
Part No. 70287-1197
OCR Text ... active description: 2.54mm (.100") pitch c-grid? header, breakaway, dual row, vertical, with retention pin, 6 circu...pk-70873-0353 ckts material number ckts material number 04 70287-1000 54 70287-1025 06...
Description 2.54mm (.100) Pitch C-Grid Header, Breakaway, Dual Row, Vertical, with Retention Pin, 6 Circuits, 6.10mm

File Size 308.35K  /  6 Page

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    NTP4302 NTB4302T4G

ON Semiconductor
Part No. NTP4302 NTB4302T4G
OCR Text ... = 25 c ? continuous @ t c = 100 c ? single pulse (t p 10 s) i d i d i dm 74 47 175 adc apk total power dissipation @ t c = 25 c ...pk) = 17 a, v ds = 30 vdc, r g = 25 ) e as 722 mj thermal resistance ? junction?to?case ? junc...
Description Power MOSFET 74 Amps, 30 Volts N?Channel TO?20 & D2PAK

File Size 78.05K  /  7 Page

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    70287-1196

Molex Electronics Ltd.
Part No. 70287-1196
OCR Text ... active description: 2.54mm (.100") pitch c-grid? header, breakaway, dual row, vertical, with retention pin, 4 circu...pk-70873-0353 ckts material number ckts material number 04 70287-1000 54 70287-1025 06...
Description 2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 4 Circuits, 6.10mm (.240) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective

File Size 308.35K  /  6 Page

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    70287-1195

Molex Electronics Ltd.
Part No. 70287-1195
OCR Text ... active description: 2.54mm (.100") pitch c-grid? header, breakaway, dual row, vertical, with retention pin, 100 cir...pk-70873-0353 ckts material number ckts material number 04 70287-1049 54 70287-1074 06...
Description 2.54mm (.100) Pitch C-Grid Header, Breakaway, Dual Row, Vertical, with Retention Pin, 100 Circuits, 8.13mm

File Size 303.32K  /  5 Page

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    FES200ZE-A FES200ZG-A FES300ZG-A FES132ZE-A FES FES100ZD-A FES150ZD-A

POWER-ONE[Power-One]
Part No. FES200ZE-A FES200ZG-A FES300ZG-A FES132ZE-A FES FES100ZD-A FES150ZD-A
OCR Text ...density. The FES converters use 100% surface-mount construction and are fully compatible with production board washing processes. FEATURES *...pk Deviation Settling Time Voltage Trim Range Current Limit Threshold Range, % of Iout Rated OVP Tri...
Description 300 WATT

File Size 387.17K  /  3 Page

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    NJVMJD50T4G NJVMJD47T4G

ON Semiconductor
Part No. NJVMJD50T4G NJVMJD47T4G
OCR Text ...ng t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissipation (watts) figure 2. switching time equivalent circuit approx +1...pk) - t c = p (pk) jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 resistance (normalized) ...
Description High Voltage Power Transistors

File Size 74.44K  /  6 Page

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