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  1-40ghz Datasheet PDF File

For 1-40ghz Found Datasheets File :: 159    Search Time::1.203ms    
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    GX02YD104KAT500 GX02YD104KA7500 GX02YD104KA71000 GX02YD104KA72 GX02YD104KAT1000 GX02YD104KAT2 GX02ZZ104MAT2-1000 GX02ZZ1

AVX Corporation
AVX, Corp.
Part No. GX02YD104KAT500 GX02YD104KA7500 GX02YD104KA71000 GX02YD104KA72 GX02YD104KAT1000 GX02YD104KAT2 GX02ZZ104MAT2-1000 GX02ZZ104MA72-1000
OCR Text ...4 Magnitude dB -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 0 5 10 15 20 25 30 35 40 (Typical) Frequency (GHz) GX02 Series - Return Loss (S11) 0 -10 Magnitude dB -20 -30 -40 -50 (Typical) -60 0 5 10 15 20 25 30 35 40 Frequen...
Description Ultra Broad Band Capacitor
CAPACITOR, CERAMIC, 10 V, X7S, 0.1 uF, SURFACE MOUNT, 0402 CHIP, ROHS COMPLIANT

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    MA4AGSBP907

M/A-COM Technology Solutions, Inc.
Part No. MA4AGSBP907
OCR Text ...23 dBm +280C for 10 seconds 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on targ...
Description AlGaAs Solder Bump Flip-Chip PIN Diode

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    EIC1415-12

Excelics Semiconductor, Inc.
Part No. EIC1415-12
OCR Text ... 0.7 23 3700 -41 -44 9000 -2.5 1.8 13000 -4.0 2.1 o dB % 4200 mA dBc mA V C/W Output 3rd Order Intermodulation Distortion f = ...40GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 VDS = 3 V, VGS = 0 V VDS =...
Description 14.40-15.40GHz 12-Watt Internally Matched Power FET

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    EIC5964-10

Excelics Semiconductor, Inc.
Part No. EIC5964-10
OCR Text ...VDS = 3 V, IDS = 60 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mount...40GHz P1dB (min) 39.5 IM3 (min)2 -43 1. Contact factory for military and hi-rel grades. 2. ...
Description 5.90-6.40 GHz 10-Watt Internally Matched Power FET

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    EIC5964-4

Excelics Semiconductor, Inc.
Part No. EIC5964-4
OCR Text ...VDS = 3 V, IDS = 20 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mount...40GHz 5.90-6.40GHz P1dB (min) 35.5 35.5 IM3 (min)2 -43 -43 1. Contact factory for military ...
Description 5.90-6.40 GHz 4-Watt Internally Matched Power FET

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    EIC5964-5

Excelics Semiconductor, Inc.
Part No. EIC5964-5
OCR Text ...VDS = 3 V, IDS = 30 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mount...40GHz 5.90-6.40GHz P1dB (min) 36.5 36.5 IM3 (min)2 -43 -43 1. Contact factory for military ...
Description 5.90-6.40 GHz 5-Watt Internally Matched Power FET

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    EIC5964-8 EIC5964-8NH

Excelics Semiconductor, Inc.
Part No. EIC5964-8 EIC5964-8NH
OCR Text ...dB % mA dBc mA V o C/W Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mount...40GHz 8-Watt Internally Matched Power FET PERFORMANCE DATA Typical S-Parameters (T= 25C, 50 syst...
Description 5.90-6.40GHz 8-Watt Internally Matched Power FET

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    MWR-MWC01GC-01-1000-F MWR-MWC01GC-01-1000-G MWR-MWC01GC-01-1000-J MWR-MWC01GC-01-1000-K MWR-MWC01GC-01-50R0-F MWR-MWC01G

IRC - a TT electronics Company.
http://
Part No. MWR-MWC01GC-01-1000-F MWR-MWC01GC-01-1000-G MWR-MWC01GC-01-1000-J MWR-MWC01GC-01-1000-K MWR-MWC01GC-01-50R0-F MWR-MWC01GC-01-50R0-G MWR-MWC01GC-01-50R0-J MWR-MWC01GC-01-50R0-K MWR-MWC01GC-01-775R0-F MWR-MWC01GC-01-775R0-G MWR-MWC01GC-01-775R0-J MWR-MWC01GC-01-775R0-K MWR-MWC01GC-02-1000-F MWR-MWC01GC-02-1000-G MWR-MWC01GC-02-1000-J MWR-MWC01GC-02-1000-K MWR-MWC01GC-02-50R0-F MWR-MWC01GC-02-50R0-G MWR-MWC01GC-02-50R0-J MWR-MWC01GG-01-1000-F MWR-MWC01GG-01-1000-G MWR-MWC01GG-01-1000-J MWR-MWC01GG-01-1000-K MWR-MWC01GG-01-50R0-F MWR-MWC01GG-01-50R0-G MWR-MWC01GG-01-50R0-J MWR-MWC01GG-01-50R0-K MWR-MWC01GG-01-775R0-F MWR-MWC01GG-01-775R0-G MWR-MWC01GG-01-775R0-J MWR-MWC01GG-01-775R0-K MWR-MWC01GG-02-1000-F MWR-MWC01GG-02-1000-G MWR-MWC01GG-02-1000-J MWR-MWC01GG-02-1000-K MWR-MWC01GG-02-50R0-F MWR-MWC01GG-02-50R0-G MWR-MWC01GG-02-50R0-J MWR-MWC01GG-02-50R0-K MWR-MWC01GG-02-775R0-F MWR-MWC01GG-02-775R0-G MWR-MWC01GG-02-775R0-J MWR-MWC01GG-02-775R0-K MWR-MWC01GG-03-1000-F MWR-MWC01GG-03-1000-G MWR-MWC01GG-03-1000-J MWR-MWC01GG-03-1000-K MWR-MWC01GG-03-50R0-F MWR-MWC01GG-03-50R0-G MWR-MWC01SC-02-1000-F MWR-MWC01SC-02-1000-G MWR-MWC01SC-02-1000-J MWR-MWC01SC-02-1000-K MWR-MWC01SC-02-50R0-F
OCR Text ... 125mW 50, 75, 100 10%, 5%, 2%, 1% -55C to 100C 60/40 Sn/Pb or Gold 99.6% Alumina 50V <0.05pF 250mW Environmental Data Performance Test Per MIL-PRF-55342 Typical Max Thermal Shock Low Temperature Operation Short-time Overload High Te...
Description TaNFilm Microwave Chip Resistor

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    RFMA1415-0.5W-Q7

Excelics Semiconductor, Inc.
Part No. RFMA1415-0.5W-Q7
OCR Text ... dB dB mA mA V V C/W o C 1. Recommended to bias each amplifier stage separately using a gate voltage range, starting from -2.5 to -0....40GHz High Gain Surface-Mounted PA Package Dimension and Pin Assignment 0.2760.002 0.2760.0...
Description 14.40- 15.40GHz High Gain Surface-Mounted PA

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    RFMA1415-0.5W

Excelics Semiconductor, Inc.
Part No. RFMA1415-0.5W
OCR Text ...-65/175C 8.8W CONTINUOUS 8V -3V 1.1A 10 mA @ 3dB compression 150C -65/150C 7.4W 1,2 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation Vdd*I...
Description 14.40 - 15.40 GHz Power Amplifier MMIC

File Size 108.57K  /  3 Page

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For 1-40ghz Found Datasheets File :: 159    Search Time::1.203ms    
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