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  1 048 576-word Datasheet PDF File

For 1 048 576-word Found Datasheets File :: 1261    Search Time::3.079ms    
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    K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J
OCR Text ...ESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), r...
Description 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out

File Size 550.56K  /  35 Page

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    AM29LV160MT100 AM29LV160MT100EI AM29LV160MT100FI AM29LV160MT100PCI AM29LV160MT100WAI AM29LV160MT90 29LV160M AM29LV160M A

AMD[Advanced Micro Devices]
Part No. AM29LV160MT100 AM29LV160MT100EI AM29LV160MT100FI AM29LV160MT100PCI AM29LV160MT100WAI AM29LV160MT90 29LV160M AM29LV160M AM29LV160MB100 AM29LV160MB100EI AM29LV160MB100FI AM29LV160MB100PCI AM29LV160MB100WAI AM29LV160MB90
OCR Text ...LV160M 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBitTM 3.0 Volt-only Boot Sector Flash Memory Data Sheet PRELIMINARY Distinctive Cha...048,576 words. The device is offered in a 48-ball Fine-pitch BGA, 64-ball Fortified BGA, and 48-pin ...
Description 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory

File Size 1,044.78K  /  60 Page

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    AM29PL160CB-120 AM29PL160CB-120EI AM29PL160CB-120SI AM29PL160CB-120SKI AM29PL160CB-65R AM29PL160CB-65REI AM29PL160CB-65R

AMD[Advanced Micro Devices]
Part No. AM29PL160CB-120 AM29PL160CB-120EI AM29PL160CB-120SI AM29PL160CB-120SKI AM29PL160CB-65R AM29PL160CB-65REI AM29PL160CB-65RSI AM29PL160CB-65RSKI AM29PL160CB-70R AM29PL160CB-70REI AM29PL160CB-70RSI AM29PL160CB-70RSKI AM29PL160CB-90 AM29PL160CB90EI AM29PL160CB90SI AM29PL160CB90SKI AM29PLI60C
OCR Text ...PL160C 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS 16 M...048,576 words.The device is offered in a 44-pin SO or a 48-pin TSOP package. The word-wide data (x16...
Description 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory

File Size 673.57K  /  44 Page

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    HY29LV160 HY29LV160BF-12 HY29LV160BF-12I HY29LV160BF-70 HY29LV160BF-70I HY29LV160BF-80 HY29LV160BF-80I HY29LV160BF-90 HY

HYNIX[Hynix Semiconductor]
Part No. HY29LV160 HY29LV160BF-12 HY29LV160BF-12I HY29LV160BF-70 HY29LV160BF-70I HY29LV160BF-80 HY29LV160BF-80I HY29LV160BF-90 HY29LV160BF-90I HY29LV160BT-12 HY29LV160BT-12I HY29LV160BT-70 HY29LV160BT-70I HY29LV160BT-80 HY29LV160BT-80I HY29LV160BT-90 HY29LV160BT-90I HY29LV160TF-12 HY29LV160TF-12I HY29LV160TF-70 HY29LV160TF-70I HY29LV160TF-80 HY29LV160TF-80I HY29LV160TF-90 HY29LV160TF-90I HY29LV160TT-12 HY29LV160TT-12I HY29LV160TT-70 HY29LV160TT-70I HY29LV160TT-80 HY29LV160TT-80I HY29LV160TT-90 HY29LV160TT-90I
OCR Text ...- Automatic sleep mode current: 1 A - Standby mode current: 1 A - Read current: 9 mA - Program/erase current: 20 mA Flexible Sector Architec...048,576 (1M) words that is available in 48pin TSOP and 48-ball FBGA packages. Wordwide data (x16) ap...
Description IC,EEPROM,NOR FLASH,1MX16/2MX8,CMOS,TSSOP,48PIN,PLASTIC
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory

File Size 513.20K  /  48 Page

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    HY29LV800 HY29LV800B-55 HY29LV800B-55I HY29LV800B-70 HY29LV800B-70I HY29LV800B-90 HY29LV800B-90I HY29LV800T-55 HY29LV800

HYNIX[Hynix Semiconductor]
Part No. HY29LV800 HY29LV800B-55 HY29LV800B-55I HY29LV800B-70 HY29LV800B-70I HY29LV800B-90 HY29LV800B-90I HY29LV800T-55 HY29LV800T-55I HY29LV800T-70 HY29LV800T-70I HY29LV800T-90 HY29LV800T-90I HY29LV800B
OCR Text ...BYTE# RY/BY# DQ[14:8] DQ[15]/A[-1] 8 n n n n Preliminary Revision 1.0, November 2001 HY29LV800 GENERAL DESCRIPTION The HY29LV80...048,576 (1M) bytes or 524,288 (512K) words that is available in 44pin PSOP, 48-pin TSOP and 48-ball ...
Description 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory

File Size 488.15K  /  40 Page

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    MT28F008B3 MT28F800B3 MT28F008B3VG-9B MT28F008B3VG-9BET MT28F008B3VG-9T MT28F008B3VG-9TET MT28F800B3VG-9B MT28F800B3VG-9

MICRON[Micron Technology]
Part No. MT28F008B3 MT28F800B3 MT28F008B3VG-9B MT28F008B3VG-9BET MT28F008B3VG-9T MT28F008B3VG-9TET MT28F800B3VG-9B MT28F800B3VG-9BET MT28F800B3VG-9T MT28F800B3VG-9TET MT28F800B3WG-9TET MT28F008B3SG-9B MT28F008B3SG-9BET MT28F008B3SG-9T MT28F008B3SG-9TET MT28F008B3WG-9B MT28F008B3WG-9BET MT28F008B3WG-9T MT28F008B3WG-9TET MT28F800B3SG-9B MT28F800B3SG-9BET MT28F800B3SG-9T MT28F800B3SG-9TET MT28F800B3WG-9B MT28F800B3WG-9BET
OCR Text ...de READ and WRITE (MT28F800B3): 1 Meg x 8/512K x 16 40-Pin TSOP Type I 48-Pin TSOP Type I 44-Pin SOP OPTIONS * Timing 90ns access ...048,576 bytes (8 bits). Writing and erasing the device is done with a VPP voltage of either 3.3V or ...
Description FLASH MEMORY

File Size 392.85K  /  30 Page

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    MT28F008B5 MT28F800B5

MICRON[Micron Technology]
Part No. MT28F008B5 MT28F800B5
OCR Text ...ide READ and WRITE (MT28F800B5, 1 Meg x 8/512K x 16) MT28F008B5 MT28F800B5 5V Only, Dual Supply (Smart 5) 0.18m Process Technology 40...048,576 bytes (8 bits). Writing or erasing the device is done with a 5V VPP voltage, while all opera...
Description FLASH MEMORY

File Size 326.27K  /  30 Page

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    IS41C16100 IS41C16100-50K IS41C16100-50KI IS41C16100-50T IS41C16100-50TI IS41C16100-60K IS41C16100-60KI IS41C16100-60T I

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Part No. IS41C16100 IS41C16100-50K IS41C16100-50KI IS41C16100-50T IS41C16100-50TI IS41C16100-60K IS41C16100-60KI IS41C16100-60T IS41C16100-60TI IS41LV1610 IS41LV16100-50TLI IS41LV16100-50TL IS41LV16100-50TI IS41LV16100-50T IS41LV16100-50KI IS41LV16100-50K IS41LV16100-60K IS41LV16100-60KI IS41LV16100-60T IS41LV16100-60TI IS41LV16100-60TL IS41LV16100-60TLI
OCR Text ...Interval: -- Auto refresh Mode: 1,024 cycles /16 ms -- RAS-Only, CAS-before-RAS (CBR), and Hidden -- Self refresh Mode - 1,024 cycles / 128m...048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accele...
Description 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

File Size 120.17K  /  20 Page

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    IS41C16105 IS41C16105-50K IS41C16105-50KE IS41C16105-50KI IS41C16105-50T IS41C16105-50TE IS41C16105-50TI IS41C16105-60K

Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Circuit Solution Inc
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
Part No. IS41C16105 IS41C16105-50K IS41C16105-50KE IS41C16105-50KI IS41C16105-50T IS41C16105-50TE IS41C16105-50TI IS41C16105-60K IS41C16105-60KE IS41C16105-60KI IS41C16105-60T IS41C16105-60TE IS41C16105-60TI
OCR Text ...tate I/O * Refresh Interval: -- 1,024 cycles/16 ms * Refresh Mode: -- RAS-Only, CAS-before-RAS (CBR), and Hidden * JEDEC standard pinout * S...048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 r...
Description 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 1M X 16 FAST PAGE DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 1M X 16 FAST PAGE DRAM, 50 ns, PDSO44

File Size 138.80K  /  18 Page

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    LH6V4256

Sharp Electrionic Components
Part No. LH6V4256
OCR Text ... I/O2 WE RAS NC A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 VSS I/O 4 I/O3 CAS OE A8 A7 A6 A5 A4 6V4256-1 TOP VIE...048,576 BITS ROW ADDRESS COUNTER REFRESH CONTROL ROW DECODER ADDRESS BUFFER 6 A0 7 A1...
Description CMOS 1M (256K x 4) Dynamic RAM

File Size 197.42K  /  18 Page

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