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  0.54a Datasheet PDF File

For 0.54a Found Datasheets File :: 599    Search Time::2.063ms    
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    IRF3703PBF

International Rectifier
Part No. IRF3703PBF
OCR Text ...0 100 1000 230 3.8 1.5 20 5.0 -55 to + 175 Units A W W/C V V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Cas...54A 76A 4000 RG 20V D.U.T IAS tp + V - DD A 3000 0.01 2000 Fig 12a. Unc...
Description SMPS MOSFET

File Size 173.03K  /  8 Page

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    IRG4PC50UDPBF

International Rectifier
Part No. IRG4PC50UDPBF
OCR Text ...220 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Parameter ...54A I C = 27A 1 2.0 I C = 14A 1.5 1.0 0 10 20 30 40 50 A 60 0.1 RG = 5.0 ...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 683.78K  /  10 Page

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    HUFA76439P3 HUFA76439S3S

FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA76439P3 HUFA76439S3S
OCR Text 0.014 Ohm, N-Channel, Logic Level UltraFET(R) Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) Featur...54A ISD = 27A Reverse Recovery Time Reverse Recovered Charge ISD = 54A, dISD/dt = 100A/s ISD = 54A, ...
Description 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
71A/ 60V/ 0.014 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

File Size 237.55K  /  10 Page

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    IRL2505PBF

International Rectifier
Part No. IRL2505PBF
OCR Text ...RL2505PbF VDSS = 55V RDS(on) = 0.008 G ID = 104A S Fifth Generation HEXFETs from International Rectifier utilize advanced process...54A 0.010 VGS = 5.0V, ID = 54A 0.013 VGS = 4.0V, ID = 45A 2.0 V VDS = VGS, ID = 250A S VDS ...
Description HEXFET Power MOSFET

File Size 217.24K  /  8 Page

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    LTC6078CMS8 LTC6079CGN LTC6079IGN LTC6078CDD LTC6078 LTC6079HGN LTC6078ACMS8 LTC6078AHMS8 LTC6078AIMS8 LTC6078HMS8 LTC60

LINER
Linear Technology
Part No. LTC6078CMS8 LTC6079CGN LTC6079IGN LTC6078CDD LTC6078 LTC6079HGN LTC6078ACMS8 LTC6078AHMS8 LTC6078AIMS8 LTC6078HMS8 LTC6078IDD LTC6078IMS8 LTC6079 LTC6079CDHC LTC6079IDHC
OCR Text ...V (25C) Maximum Offset Drift of 0.7V/C Maximum Input Bias: 1pA (25C) 50pA (85C) Micropower: 54A per Amp 95dB CMRR (Min) 100dB PSRR (Min) Input Noise Voltage Density: 16nV/Hz Rail-to-Rail Inputs and Outputs 2.7V to 5.5V Operation Voltage LTC...
Description Micropower Precision, Dual/Quad CMOS Rail-to-Rail Input/Output Amplifi ers

File Size 282.14K  /  20 Page

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    NDB708AE NDP708A NDP708AE NDP708B NDP708BE NDB708A NDB708B NDB708BE

Fairchild Semiconductor
Part No. NDB708AE NDP708A NDP708AE NDP708B NDP708BE NDB708A NDB708B NDB708BE
OCR Text ...res 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum j...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 73.76K  /  6 Page

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    APT6010LLL APT6010B2LL

Advanced Power Technology
Part No. APT6010LLL APT6010B2LL
OCR Text 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduct...54A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ numbers reflect the ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 57.15K  /  2 Page

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    IRL3715L IRL3715 IRL3715S

IRF[International Rectifier]
Part No. IRL3715L IRL3715 IRL3715S
OCR Text ... Max. 20 20 54 38 210 71 3.8 0.48 -55 to + 175 Units V V A W W W/C C Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount) Typ. ...
Description SMPS MOSFET

File Size 249.08K  /  11 Page

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    IRHF58Z30CM IRHY53Z30CM JANSH2N7482T3 IRHY54Z30CM IRHY57Z30CM JANSF2N7482T3 JANSG2N7482T3 JANSR2N7482T3

IRF[International Rectifier]
Part No. IRHF58Z30CM IRHY53Z30CM JANSH2N7482T3 IRHY54Z30CM IRHY57Z30CM JANSF2N7482T3 JANSG2N7482T3 JANSR2N7482T3
OCR Text ...(on) IRHY57Z30CM 100K Rads (Si) 0.03 IRHY53Z30CM 300K Rads (Si) 0.03 IRHY54Z30CM 500K Rads (Si) IRHF58Z30CM 1000K Rads (Si) 0.03 0.035 IR...54A/s, VDD 30V, TJ 150C A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS ...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

File Size 130.48K  /  8 Page

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    IRHY57Z30CM 2179

International Rectifier
Part No. IRHY57Z30CM 2179
OCR Text ...58Z30CM 1000K Rads (Si) RDS(on) 0.03 0.03 0.03 0.035 ID 18A* 18A* 18A* 18A* IRHY57Z30CM 30V N-CHANNEL , 4# TECHNOLOGY c TO-2...54A/s, VDD 30V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bi...
Description RADIATION HARDENED POWER MOSFET
From old datasheet system

File Size 110.81K  /  8 Page

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For 0.54a Found Datasheets File :: 599    Search Time::2.063ms    
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