0.50v pdf Datasheet P9 Full Text Search --- IC-ON-LINE


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0.50v Datasheet PDF File

For 0.50v Found Datasheets File :: 28713 Search Time::1.828ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	S1A2298A01-A0B0 S1A2298A01
OCR Text	...7 Sif8 Test Conditions FM, VI = 0 AM, VI = 0 VO = -3dB VI = 80dBu VI = 80dBu VI = 80dBu VI = 80dBu VI = variable VI = 20dBu VI = 80dBu VI = ...50V R C27 4.7F /50V C4 0.068F C15 10.7M 0.082F C16 T1 C14 1F X1 456K C13 0.022F 4.7k ...
Description	AM/FM TUNER MPX
File Size	171.73K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	S1A0497X01-S0B0 S1A0497X01 S1A0497X01-I0B0
OCR Text	...cillation stop voltage: VSTOP = 0.9V (Typ) mproved inter-modulation characteristics by double balanced type mixer circuit Low spurious radia...50V R C27 4.7F /50V C4 0.068F C15 450K 0.082F C16 T1 C14 1F X1 456K C13 0.022F 4.7k F...
Description	FM FRONT END
File Size	173.18K / 10 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	S1A0291X01-A0B0 DS_S1A0291X01 S1A0291X01 DSS1A0291X01
OCR Text	...HD1 CT1 Test Conditions VI = 0, REC MODE VI = -80dBm THD = 1%, NAB VO = 0.2V, NAB VO = 0.5V, NAB VO = 0.5V, NAB Fiter: 20Hz - 20kHz RG = ...50V R17 82 C23 47F/10V C29 100pF C30 0.018F C31 1000pF D6 1N4148 C20 100pF R20 100 R22 R23 10k C30 1...
Description	PB/REC PRE AMP FOR 2 DECK
File Size	146.84K / 8 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	ZA2030EWR ZA2030
OCR Text	....4V to 22V operation Integrated 0.22 switches Thermal shutdown Cycle-by-cycle short circuit protection Amplifies full audio range with low T...50V, ceramic, leaded 2 0.22F, 16V, ceramic, leaded 2 2.2nF, 16V, ceramic, leaded 1 10F, 50V, electro...
Description	AAM 30W Class-D Bridged Audio Amplifier
File Size	151.29K / 5 Page	View it Online	Download Datasheet

				Diodes Incorporated ZETEX[Zetex Semiconductors]
Part No.	ZTX869
OCR Text	...0V VCB=50V, Tamb=100C VEB=6V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=100mA* IC=5A, IB=100mA* IC=5A, IB=100mA* A A Base-Emitter Saturation Voltage VBE(sat) ZTX869 ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Base-Em...
Description	NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
File Size	59.76K / 3 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	ZVN4424G ZVN4424GTA
OCR Text	...urce threshold voltage v gs(th) 0.8 1.3 1.8 v i d =1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 40v, v ds =0v on state drain-cur...50v, i d =0.25a, v gen =10v rise time (2)(3) t r 58ns turn-off delay time (2)(3) t d(off) 40 60 ns ...
Description	SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
File Size	112.43K / 4 Page	View it Online	Download Datasheet

				Diodes Incorporated ZETEX[Zetex Semiconductors]
Part No.	ZXMHC10A07T8TC ZXMHC10A07T8 ZXMHC10A07T8TA
OCR Text	0.7 ; ID = 1.4A P-Channel = V(BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3A DESCRIPTION This new generation of trench MOSFETs from Zetex u...50V, V GS = 10V I D = 1.0A V DD = 50V, I D = 1.0A R G 6.0 , V GS = 10V 0.95 27 12 V ns nC ...
Description	COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE
File Size	280.08K / 10 Page	View it Online	Download Datasheet

				ZETEX PLC ZETEX[Zetex Semiconductors] Diodes Incorporated
Part No.	ZXMN10A07Z_04 ZXMN10A07Z ZXMN10A07ZTA ZXMN10A07Z04 UZXMN10A07ZTA
OCR Text	0.7 ; ID=1.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on...50V, V GS =0V f=1MHz Turn-on-delay time Rise time Turn-off delay time Fall time Total gate charge...
Description	1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 100V N-CHANNEL ENHANCEMENT MODE MOSFET
File Size	179.65K / 7 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	RN4905
OCR Text	...Test Condition VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -5V, IC = 0 VCE = -5V, IC = -10mA IC = -5mA, IB = -0.25mA VCE = -0.2V, IC = -5mA VCE = -5V, IC = -0.1mA VCE = -10V, IC = -5mA VCB = -10V, IE = 0 Min -0.078 80 -0.6 -0.5 Typ. ...
Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
File Size	150.10K / 5 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	RN4903
OCR Text	...Test Condition VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -10V, IC = 0 VCE = -5V, IC = -10mA IC = -5mA, IB = -0.25mA VCE = -0.2V, IC = -5mA VCE = -5V, IC = -0.1mA VCE = -10V, IC = -5mA VCB = -10V, IE = 0, f = 1MHz Min -0.17 70 -1.3 -1.0...
Description	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
File Size	222.02K / 5 Page	View it Online	Download Datasheet

For 0.50v Found Datasheets File :: 28713 Search Time::1.828ms
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