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0.451 Datasheet PDF File

For 0.451 Found Datasheets File :: 1905 Search Time::4.563ms
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				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	AT32032 AT-32032-BLK AT-32032-TR1
OCR Text	... Test Conditions Noise Figure f=0.9 GHz VCE=2.7V, IC=5mA f=1.8 GHz Associated Gain f=0.9 GHz VCE=2.7V, IC=5mA f=1.8 GHz Forward Current Tran...451 0.403 0.419 0.459 0.497 0.529 0.561 0.590 0.626 S11 Ang -51 -74 -94 -130 -161 147 104 69 45 27 1...
Description	AT32032
File Size	163.29K / 14 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF5800
OCR Text	... G 3 4 S RDS(on) = 0.085 T o p V ie w Description These P-channel MOSFETs from International Rectifier utilize advanced ...451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 ...
Description	Power MOSFET(Vdss=-30V, Rds(on)=0.085ohm) 功率MOSFET（减振钢板基本\u003d- 30V的，的Rds（on）\u003d 0.085ohm Power MOSFET(Vdss=-30V/ Rds(on)=0.085ohm)
File Size	97.25K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5805
OCR Text	...e VDSS -30V RDS(on) max 0.098@VGS = -10V 0.165@VGS = -4.5V ID -3.8A -3.0A Description These P-channel MOSFETs from Internati...451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3...
Description	Power MOSFET(Vdss=-30V)
File Size	125.03K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFL4310 IRFL4310TR
OCR Text	...stance VDSS = 100V RDS(on) = 0.20W G S ID = 1.6A Description Fifth Generation HEXFETs from International Rectifier utilize adva...451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: ...
Description	HEXFET? Power MOSFET 1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A) 100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
File Size	310.61K / 9 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA800T UPA800T-T1 UPA800T-KB
OCR Text	...250.1 FEATURES * Low Noise 0.65 0.65 1.3 * High Gain \|S21e\|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA * A Mini Mold Packag...451 .445 S22 ANG -10.1 -17.7 -24.4 -26.7 -28.7 -30.3 -30.6 -31.3 -30.1 -33.4 -31.8 -33.4 -33.2 -34.2...
Description	2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
File Size	47.29K / 6 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5184 2SC5184-T1 2SC5184-T2
OCR Text	...mA, f = 2 GHz (Units: mm) 2.1 0.1 1.25 0.1 * Super Mini-Mold package EIAJ: SC-70 2.0 0.2 0.3+0.1 -0 0.65 0.65 ORDERING INFORMAT...451 0.428 0.408 0.390 0.375 0.361 0.348 0.338 0.329 0.319 S22 ANG -10.7 -20.4 -28.1 -34.6 -39.7 -43....
Description	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
File Size	57.03K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR53HD420 IR53HD420-P2 IR53H420 IR53H420-P2
OCR Text	...(type.) Rds(on) 500V 50% 1.2s 3.0 PD (TA = 25oC) 2.0W or 3.0W Package Description The IR53H(D)420(-P2) are complete high voltage, ...451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel:...
Description	HALF BRIDGE BASED PRPHL DRVR, PSIP7 SELF-OSCILLATING HALF BRIDGE(82.40 k) 500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package
File Size	81.17K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7452 IRF7452TR
OCR Text	...T VDSS 100V RDS(on) max 0.060 ID 4.5A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capaci...451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3...
Description	100V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=100V, Rds(on)max=0.060ohm, Id=4.5A)
File Size	103.14K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7463
OCR Text	...on VDSS 30V RDS(on) max 0.008 ID 14A Benefits Ultra-Low RDS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Swi...451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3...
Description	Power MOSFET(Vdss=30V/ Rds(on)max=0.008ohm/ Id=14A) Power MOSFET(Vdss=30V, Rds(on)max=0.008ohm, Id=14A)
File Size	81.06K / 7 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC4228 2SC4228-T1 2SC4228-T2 2SC4228NE68030
OCR Text	...IMENSIONS in millimeters 2.1 0.1 1.25 0.1 2.0 0.2 +0.1 0.3 -0 0.65 0.65 2 3 +0.1 0.3 -0 FEATURES * High fT * Low Cre * High ...451 .445 S22 ANG -10.1 -17.7 -24.4 -26.7 -28.7 -30.3 -30.6 -31.3 -30.1 -33.4 -31.8 -33.4 -33.2 -34.2...
Description	Discrete HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
File Size	47.68K / 8 Page	View it Online	Download Datasheet

For 0.451 Found Datasheets File :: 1905 Search Time::4.563ms
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