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Hi-Sincerity Mocroelect...
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Microelectronics
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| Part No. |
HJ45H11
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| OCR Text |
... V Test Conditions IC=-30mA, IB=0 IC=-1mA, IB=0 IE=-1mA, IC=0 VCB=-80V, IE=0 VEB=-5V, IC=0 IC=-8A, IB=-0.8A IC=-8A, IB=-0.8A VCE=-1V, IC=-2A VCE=-1V, IC=-4A VCB=-10V, VCE=-10V, IC=-500mA, f=20MHz
*Pulse Test : Pulse Width 380us, Duty Cycle... |
| Description |
PNP EPITAXIAL PLANAR TRANSISTOR
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| File Size |
21.76K /
2 Page |
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HSMC CORP.
HSMC[Hi-Sincerity Mocroelectronics]
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| Part No. |
HJ47
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| OCR Text |
... 350 250 5 30 10 10 Typ. Max. 1 0.2 0.1 1 1.5 150 Unit V V V mA mA mA V V Test Conditions IC=1mA IC=30mA IE=0.1mA VEB=5V VCE=150V VCE=350V IC=1A, IB=0.2A IC=1A, VCE=10V IC=0.3A, VCE=10V IC=1A, VCE=10V IC=0.2A, VCE=10V, f=2MHz
*Pulse Test :... |
| Description |
NPN EPITAXIAL PLANAR TRANSISTOR
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| File Size |
29.35K /
3 Page |
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it Online |
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Hi-Sincerity Mocroelect...
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Microelectronics
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| Part No. |
HJ649A
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| OCR Text |
... IC=-150mA VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
MHz pF
Classification Of hFE1
Rank Range B 60-120 C 100-200
HJ649A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characterist... |
| Description |
PNP EPITAXIAL PLANAR TRANSISTOR
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| File Size |
26.44K /
3 Page |
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Hi-Sincerity Mocroelect...
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Microelectronics
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| Part No. |
HJ6718
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| OCR Text |
...A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283
Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80
DIM G H I J K L
Inches Min. Max. ... |
| Description |
NPN EPITAXIAL PLANAR TRANSISTOR
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| File Size |
21.41K /
2 Page |
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MINI[Mini-Circuits]
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| Part No. |
HJK-20VH_ HJK-20VH
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| OCR Text |
..._ X 7.2 7.16 7.24 7.37 7.37
0.2 0.18 0.10 0.11 0.13
Max. 8.5 8.2 8.5 8.5 8.5
Note 1. Measured at -14 dBm RF. High order spurious 3RF-2LO, 4RF-2LO, 4RF-3LO, 3RF-2LO, 3RF-2LO (dBc) typ.<-80 dBc
Typical Performance Data
Suggested... |
| Description |
Frequency Mixer
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| File Size |
185.30K /
2 Page |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
HL1326MF
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| OCR Text |
... tr tf Is I (DARK) Ct Min -- 5 0.3 0.15 Lasing wavelength Spectral width Beam divergence (parallel) Beam divergence (perpendicular) Rise time Fall time Monitor current PD dark current PD capacitance Typ 8 -- 0.4 0.25 Max 20 -- -- -- Unit m... |
| Description |
From old datasheet system
InGaAsP Laser Diodes
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| File Size |
36.83K /
7 Page |
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HYNIX[Hynix Semiconductor]
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| Part No. |
HL15604 HL14104
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| OCR Text |
... *
* * * *
64QFP (10x10)
0.5
0.1 1.7max 0.5 1.25
(1.6)
14.0 1.0 48 49 1.0 0.8 33 32
(1.6) 1.0 0.15 48 49
12.0 10.0 32 33
0.15
17.2
14.0
0.8
12.0 10.0
64 1 1.0 0.35
17 16 2.7 0.1
64
1 0.18
17... |
| Description |
Hyundai Electronics Industries System IC Division
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| File Size |
431.95K /
26 Page |
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OPNEXT[Opnext. Inc.]
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| Part No. |
HL6322G HL6321G
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| OCR Text |
0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement. ODE-208-028A (Z) Rev.1 Oct. 24, 2006
Features
* * * * * * Visible l... |
| Description |
AlGaInP Laser Diodes
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| File Size |
91.34K /
4 Page |
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Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
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| Part No. |
HL6323MG
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| OCR Text |
0.63 m band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors. The HL6323MG is packaged in the small ... |
| Description |
AlGaInP Laser Diode
From old datasheet system
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| File Size |
35.31K /
8 Page |
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it Online |
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Price and Availability
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