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  0.0106 Datasheet PDF File

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    2307

http://
GHz Technology
Part No. 2307
OCR Text 0 Watts - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION The 2307 is a COMMON BASE transistor capable of providing 7 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high ...
Description 7.0 Watts - 20 Volts, Class C Microwave 2300 MHz

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    238164090042

Vishay Siliconix
Part No. 238164090042
OCR Text ... PARAMETER Resistance value at: 0 C 25 C 85 C 100 C B25/85 - value Temperature coefficient Maximum dissipation Dissipation factor: in still air (for information only); note 1 in still water (for information only); note 1 Thermal time consta...
Description NTC Thermistors, Steel Capped Sensors

File Size 113.02K  /  3 Page

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    24LC65T-_P 24LC65T-_SM 24LC65T-E_P 24LC65T-E_SM 24LC65T-I_P 24LC65T-I_SM 24LC65-I_SM 24AA65 24AA65-_P 24AA65-_SM 24AA65_

MICROCHIP[Microchip Technology]
Part No. 24LC65T-_P 24LC65T-_SM 24LC65T-E_P 24LC65T-E_SM 24LC65T-I_P 24LC65T-I_SM 24LC65-I_SM 24AA65 24AA65-_P 24AA65-_SM 24AA65_03 24AA65-E_P 24AA65-E_SM 24AA65-I_P 24AA65-I_SM 24AA65T-_P 24AA65T-_SM 24AA65T-E_P 24AA65T-E_SM 24AA65T-I_P 24AA65T-I_SM 24C65 24C65-_P 24C65-_SM 24C65-E_P 24C65-E_SM 24C65-I_P 24C65-I_SM 24C65T-_P 24C65T-_SM 24C65T-E_P 24C65T-E_SM 24C65T-I_P 24C65T-I_SM 24LC65 24LC65-_P 24LC65-_SM 24LC65-E_P 24LC65-E_SM 24LC65-I_P 24C65-I/P 24C65-I/SM 24LC65-I/P 24LC65-I/SM 24C65T-I/SM 24LC65T-I/SM 24AA65T/SM 24C65T/SM 24LC65T/SM 24C65/SM 24C65/P 24LC65/P 24LC65/SM 24AA65/P 24AA65/SM
OCR Text ... Inc. 24AA65/24LC65/24C65 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings() VCC......................................................................................................................................................
Description  
64K 1.8V I2C Smart Serial O EEPROM

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    25LC1024-E_MF 25LC1024-E_P 25LC1024-E_SM 25LC1024-I_MF 25LC1024-I_P 25LC1024-I_SM 25LC1024T-E_MF 25LC1024T-E_P 25LC1024T

MICROCHIP[Microchip Technology]
Part No. 25LC1024-E_MF 25LC1024-E_P 25LC1024-E_SM 25LC1024-I_MF 25LC1024-I_P 25LC1024-I_SM 25LC1024T-E_MF 25LC1024T-E_P 25LC1024T-E_SM 25LC1024T-I_MF 25LC1024T-I_P 25LC1024T-I_SM 25AA1024T-I_SM 25AA1024 25AA1024-E_MF 25AA1024-E_P 25AA1024-E_SM 25AA1024-I_MF 25AA1024-I_P 25AA1024-I_SM 25AA1024T-E_MF 25AA1024T-E_P 25AA1024T-E_SM 25AA1024T-I_MF 25AA1024T-I_P
OCR Text ...-page 1 25AA1024/25LC1024 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings () VCC.....................................................................................................................................................
Description 1 Mbit SPI Bus Serial EEPROM

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    2FAF-C10R 2FAF-C10RLF

Bourns Electronic Solutions
Part No. 2FAF-C10R 2FAF-C10RLF
OCR Text ...bol R C VWM VBR VF IR S21 -28 6.0 0.8 0.05 -35 0.1 Min. 80 24 Nom. 100 30 5.0 Max. 120 36 Unit -- pF V V V A dB SOLDER BUMPS SILICON DIE 8 15 100 kV kV mW Thermal Characteristics (@ TA = 25 C Unless Otherwise Noted) Parameter...
Description Integrated Passive & Active Device

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    2FAH-C20R 2FAH-C20RLF

Bourns Inc.
Bourns Electronic Solutions
Bourns, Inc.
Part No. 2FAH-C20R 2FAH-C20RLF
OCR Text ...id formation. The grid pitch is 0.5mm. The dimensions for the CSP packaged device are shown in Fig. 2 below. 858 40 (33.78 1.57) 248.5 45 (9.78 1.78) BUMP A1/PIN 1 INDICATOR BOURNS LOGO A1 B1 C1 D1 A2 B2 C2 D2 ...
Description Integrated Passive & Active Device using CSP

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    2KBP005M06 2KBP10M 2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M

WTE[Won-Top Electronics]
Part No. 2KBP005M06 2KBP10M 2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M
OCR Text ... 4.70 E 3.60 4.10 G 2.75 3.15 H 0.76 0.86 I 1.52 -- J 11.68 12.70 K 12.7 -- L 3.2 x 45 Typical All Dimensions in mm J ~ ~ + B K C I E G H Mechanical Data Case: KBPM, Molded Plastic Terminals: Plated Leads Solderable per MIL...
Description 2.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

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    2N3442

Microsemi Corporation
Part No. 2N3442
OCR Text ...bol RJC Value 140 160 150 7.0 7.0 10 6.0 117 -55 to +200 Max. 1.5 Units Vdc Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range TO-3* (TO-204AA) THERMAL CHARAC...
Description NPN HIGH POWER SILICON TRANSISTOR

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    2N3442 2N3442G

Rectron Semiconductor
ONSEMI[ON Semiconductor]
Part No. 2N3442 2N3442G
OCR Text ... IB PD TJ, Tstg Value 140 160 7.0 10 15 7.0 - 117 0.67 -65 to +200 Unit Vdc Vdc Vdc Adc Adc W W/_C _C 10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS - 117 WATTS TO-204AA (TO-3) CASE 1-07 STYLE 1 Total Device Dissipation @ TC = 25...
Description High−Power Industrial Transistors

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    2N3773 2N6099

Unisonic Technologies
Part No. 2N3773 2N6099
OCR Text ...5(8A 4V) Vce(sat)=1.4V(Ic=8A,Ib=0.8A) *For Low Distortion Complementary Designs TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified ) PARAMETERS Collector-base voltage Collector-emitter voltage Emitter-base voltage Colle...
Description COMPLEMENTARY SILICON TRANSISTORS

File Size 65.46K  /  5 Page

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