0.0029 pdf Datasheet P9 Full Text Search --- IC-ON-LINE


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0.0029 Datasheet PDF File

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				SANYO[Sanyo Semicon Device]
Part No.	2SD1666
OCR Text	... 2041A [2SB1133 / 2SD1666] 10.0 3.2 3.5 7.2 Wide ASO(Adoption of MBIT process). Micaless package facilitating easy mounting. High reliability. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 2.4 0.7 ( ) : 2SB1133 Absol...
Description	LOW FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS
File Size	30.57K / 4 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD2019
OCR Text	...Collector 3. Base ID 15 k (Typ) 0.5 k (Typ) 1 1 2 3 2SD2019 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Colle...
Description	Silicon NPN Epitaxial
File Size	31.70K / 6 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SD2634
OCR Text	... unit : mm 2174A [2SD2634] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4...
Description	NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications
File Size	30.57K / 4 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SK1520 2SK1519
OCR Text	...10 250 V A A I G = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 -- -- \|yfs\| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 15 -- -- -- -- -- -- -- -- -- -- 0.11 0.12 25 5800 1550 170 65 170 415 2...
Description	Silicon N Channel MOS FET Silicon N-Channel MOS FET
File Size	49.47K / 9 Page	View it Online	Download Datasheet

				Panasonic Semiconductor http://
Part No.	2SK1611
OCR Text	...ching characteristic unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 s Applications 16.70.3 7.50.2 q High-speed switching (switching power supply, AC adaptor) q For high-frequency power amplification 3.10.1 s Ab...
Description	V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
File Size	35.34K / 2 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2048-L 2SK2048-S
OCR Text	...ce N-channel MOS-FET 30V 0,022 35A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unl...
Description	N-channel MOS-FET
File Size	205.56K / 2 Page	View it Online	Download Datasheet

				http:// FUJI[Fuji Electric]
Part No.	2SK2071-01L 2SK2071-01S
OCR Text	... 100H Min. 600 2,1 Typ. 3,0 10 0,2 10 5,5 1,8 270 32 15 4 12 25 20 Max. 4,0 500 1,0 100 6,5 400 48 23 6 18 40 30 2 6 1,41 1,0 2 IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C 0,92 500 0,8 Unit V V A mA ...
Description	N-channel MOS-FET
File Size	202.68K / 2 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SK2595
OCR Text	...(off) Ciss Coss Pout Min. -- -- 0.6 -- -- 37.3 Typ -- -- -- 68 27 38.45 Max. 10 5.0 1.3 -- -- -- Unit A A V pF pF dBm Test Conditions VDS = 12 V, VGS = 0 VGS = 10V, VDS = 0 I D = 6mA, VDS = 12V VGS = 5V, VDS = 0 f = 1MHz VDS = 12V, VGS = 0 ...
Description	Silicon N-Channel MOS FET UHF Power Amplifier From old datasheet system Silicon NPN Triple Diffused
File Size	41.45K / 7 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SK2788
OCR Text	... * Low on-resistance R DS(on) = 0.12 typ (VGS = 10 V, I D = 1 A) * Low drive current * High speed switching * 4V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2788 Absolute M...
Description	Silicon N Channel MOS FET High Speed Power Switching
File Size	39.28K / 9 Page	View it Online	Download Datasheet

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