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  -30v 0.1a Datasheet PDF File

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    AOP601L AOP601

Alpha & Omega Semicondu...
AOSMD[Alpha & Omega Semiconductors]
Part No. AOP601L AOP601
OCR Text ... Features n-channel p-channel -30v VDS (V) = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28m < 35m (VGS = -10V) < 43m < 58m (VGS = -4.5V) Schottky VDS=30V, I F=3A, VF<0.5V@1A PDIP-8 S2 G2 S1/A G1 1 2 3 4 8 7 6 5 D2 D2 D1/K D1/K D2 ...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 142.51K  /  8 Page

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    FZT489TA FZT489QTA

Diodes Incorporated
Part No. FZT489TA FZT489QTA
OCR Text ...orporated fzt489 30v npn silicon planar medium power transistor in sot223 features ? bv ceo > 30v ? max continu...0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - matte ti n plated leads,...
Description Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
30V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223

File Size 217.63K  /  7 Page

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    AS7805TTRE1 AS78XX AS7805DE1 AS7805DTRE1 AS7805TE1 AS7812DE1 AS7812DTRE1 AS7812TE1 AS7812TTRE1 AS7815DE1 AS7815DTRE1 AS7

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BCDSEMI
BCD Semiconductor Manufacturing Limited
Part No. AS7805TTRE1 AS78XX AS7805DE1 AS7805DTRE1 AS7805TE1 AS7812DE1 AS7812DTRE1 AS7812TE1 AS7812TTRE1 AS7815DE1 AS7815DTRE1 AS7815TE1 AS7815TTRE1
OCR Text ...o 1A, TJ=25 C VIN=19V VIN=15 to 30V, IOUT=500mA, TJ=25 C IOUT=5mA to 1A, TJ VIN=15 to 25V, f=120Hz, IOUT=500mA VOUT=1%, IOUT=1A, TJ f=1kHz V...0.3 0.08 60 2 10 11 0.2 2.2 0.96 80 120 100 6 0.8 0.5 Mar. 2006 Rev. 1. 0 6 BCD Semiconduct...
Description 3-TERMINAL 1A POSITIVE VOLTAGE REGULATOR

File Size 155.16K  /  14 Page

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    ZXMC4559DN8

Zetex Semiconductors
Part No. ZXMC4559DN8
OCR Text ...capacitance c iss 1063 pf v ds =30v, v gs =0v, f=1mhz output capacitance c oss 104 pf reverse transfer capacitance c rss 64 pf switching (2)...0 ? ,v gs =10v rise time t r 4.0 ns turn-off delay time t d(off) 26.2 ns fall time t f 10.6 ns gate ...
Description N & P-channel MOSFET

File Size 286.10K  /  10 Page

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    AS78XX07 AS7808T-E1 AS7805DTR-E1 AS7815T-E1 AS7805D-E1 AS7805T-E1 AS7808D-E1 AS7808DTR-E1 AS7809D-E1 AS7809DTR-E1 AS7809

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BCDSEMI
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manuf...
Part No. AS78XX07 AS7808T-E1 AS7805DTR-E1 AS7815T-E1 AS7805D-E1 AS7805T-E1 AS7808D-E1 AS7808DTR-E1 AS7809D-E1 AS7809DTR-E1 AS7809T-E1 AS7812D-E1 AS7812DTR-E1 AS7812T-E1 AS7815D-E1 AS7815DTR-E1
OCR Text ... TJ=25oC =25oC VIN=15V to 30V, IOUT=500mA, TJ IOUT=5mA to 1A, TJ=25 C VIN=15V to 25V, f=120Hz, IOUT=500mA VOUT=1%, IOUT=1A, TJ f=1k...0 IOUT=5mA to 1A, VIN=18.5V to 28.5V, f=120Hz, IOUT=500mA VOUT=1%, IOUT=1A, TJ=25oC f=10Hz to 100kHz...
Description    1A 3-TERMINAL POSITIVE VOLTAGE REGULATOR

File Size 168.50K  /  15 Page

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    CEM8968

Chino-Excel Technology
Part No. CEM8968
OCR Text 30V, 7A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V. -30v, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V. Super high...0 -55 to 150 20 -6.2 -25 Maximum Power Dissipation Operating and Store Temperature Range T...
Description Dual Enhancement Mode Field Effect Transistor (N and P Channel)

File Size 540.40K  /  7 Page

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    Diodes
Part No. DMC3025LSD DMC3025LSD-13
OCR Text ...25lsd advanced information 30v complementary enha ncement mode mosfet product summary device v (br)dss r ds(on) max package i d m...0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections indicator: see diagram ...
Description 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET

File Size 277.98K  /  9 Page

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    BYV25FD-600 BYV25FD-600-15

NXP Semiconductors
Part No. BYV25FD-600 BYV25FD-600-15
OCR Text ...se recovery time i f =1a; v r =30v; di f /dt = 100 a/s; t j =25c; see figure 6 -17.535ns byv25fd-600 all information provided in this ...0.5 ; t mb 121 c; see figure 1 ; see figure 2 -5a i frm repetitive peak forward current square-...
Description Enhanced ultrafast power diode

File Size 169.42K  /  12 Page

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    FDMS5672

Fairchild Semiconductor
Part No. FDMS5672
OCR Text ...pacitance Gate Resistance VDS = 30V, VGS = 0V, f = 1MHz f = 1MHz 2100 375 120 1.2 2800 500 180 pF pF pF Switching Characteristics td(on...0.80 35 42 1.20 53 63 V ns nC IF = 10.6A, di/dt = 100A/s Notes: 1: RJA is determined with the dev...
Description N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mohm

File Size 509.76K  /  7 Page

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