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  120-150v Datasheet PDF File

For 120-150v Found Datasheets File :: 2302    Search Time::2.344ms    
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    TP862C12R

Fuji Electric
Part No. TP862C12R
OCR Text ... Square wave =60 Square wave =120 Sine wave =180 8 Square wave =180 DC Reverse Power Dissipation 12 360 =180 6 4 ...150V / 20A ) Surge Capability (max.) 1000 1000 TP865C15R (20A) Surge Current Ratings (max.) ...
Description    High Voltage Schottky barrier diode

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    TP862C15R

Fuji Electric
Part No. TP862C15R
OCR Text ... Square wave =60 Square wave =120 Sine wave =180 4 Square wave =180 DC 4 =180 2 2 WF Per 1element 0 0 2 4 6 0 0 20 40 60 8...150V / 10A ) TP862C15R (10A) Surge Capability (max.) 1000 1000 Surge Current Ratings (max....
Description    High Voltage Schottky barrier diode

File Size 73.99K  /  3 Page

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    IRFP4321PBF

International Rectifier
Part No. IRFP4321PBF
OCR Text ...5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics 7000 6000 5000 4000 3000 2000 1000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHO...
Description    HEXFET Power MOSFET

File Size 285.48K  /  8 Page

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    FQA28N1507 FQA28N15F109

Fairchild Semiconductor
Part No. FQA28N1507 FQA28N15F109
OCR Text ...5C VDS = 150 V, VGS = 0 V VDS = 120 V, TC = 150C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 16.5A V...150V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 2...
Description 150V N-Channel MOSFET

File Size 811.90K  /  9 Page

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    IXZ210N50L

IXYS Corporation
Part No. IXZ210N50L
OCR Text ....60 0.01 -2.91 8.26 82.15 0.44 -120.22 17.12 0.89 -154.31 0.01 4.60 7.96 81.57 0.44 -120.79 17.68 0.89 -155.09 0.01 3.83 7.68 81.02 0.45 -...150v freq mag s11 ang s11 mag s21 ang s21 mag s12 ang s12 mag s22 ang s22 30.00 0.985 / ...
Description (IXZ210N50L / IXZ2210N50L) N-Channel Enhancement Mode Linear 175MHz RF MOSFET

File Size 282.35K  /  9 Page

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    IRFI4321PBF

International Rectifier
Part No. IRFI4321PBF
OCR Text ...0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics 7000 6000 5000 4000 3000 2000 1000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED...
Description HEXFET Power MOSFET

File Size 278.98K  /  8 Page

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    Advanced Power Technology Ltd.
Part No. ARF449B
OCR Text ...er amplifier applications up to 120 mhz. ? specified 150 volt, 81.36 mhz characteristics: ? output power = 150 watts. ? gain = 13db (class c...150v f = 1 mhz v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25 c r g = 1.6 w min typ max 980...
Description N-CHANNEL ENHANCEMENT MODE

File Size 58.92K  /  4 Page

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    IRFB4321GPBF

International Rectifier
Part No. IRFB4321GPBF
OCR Text ...y Max. 83 59 330 330 2.2 30 120 -55 to + 175 300 10lbfxin (1.1Nxm) Typ. --- 0.50 --- Max. 0.45 --- 62 c Units A W W/C V mJ d ...150V, VGS = 0V 1.0 mA VDS = 150V, VGS = 0V, TJ = 125C 100 nA VGS = 20V -100 VGS = -20V --- f ...
Description HEXFETPower MOSFET

File Size 282.10K  /  8 Page

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    TP868C15R

Fuji Electric
Part No. TP868C15R
OCR Text ...uare wave =60 14 Square wave =120 Sine wave =180 12 Square wave =180 10 DC 8 6 4 8 6 =180 4 2 WF 2 Per 1elemen...150V / 30A ) Surge Capability (max.) 1000 1000 TP868C15R (30A) Surge Current Ratings (max.) ...
Description High Voltage Schottky barrier diode

File Size 72.60K  /  3 Page

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For 120-150v Found Datasheets File :: 2302    Search Time::2.344ms    
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