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For x4-bit Found Datasheets File :: 2789    Search Time::1.063ms    
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    V437464Q24V V437464Q24VXTG-10PC V437464Q24VXTG-75 V437464Q24VXTG-75PC

Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Part No. V437464Q24V V437464Q24VXTG-10PC V437464Q24VXTG-75 V437464Q24VXTG-75PC
OCR Text ...H DEPTH 168 PIN Unbuffered DIMM X4 COMPONENT REFRESH RATE 8K COMPONENT PACKAGE, T = TSOP COMPONENT A=0.17u B=0.14u REV LEVEL LVTTL 4 BANKS V437464Q24V Rev. 1.0 January 2002 3 V437464Q24V CILETIV LESOM Block Diagram CS0 DQM0...
Description 3.3 VOLT 64M x 72 HIGH PERFORMANCE UNBUFFERED ECC SDRAM MODULE 3.3400 × 72高性能无缓冲ECC内存模块

File Size 87.67K  /  13 Page

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    V58C2128 V58C2128164S V58C2128404S V58C2128804S

MOSEL[Mosel Vitelic, Corp]
Part No. V58C2128 V58C2128164S V58C2128404S V58C2128804S
OCR Text ...V QFC options for FET control. x4 parts. *Note: DDR 333B Supports PC2700 module with 2.5-3-3 timing DDR 266A Supports PC2100 module with 2...bit 4096 x 512 x 16 bit 4096 x 512 x 16 bit 4096 x 512 x 16 bit Input buffer Output b...
Description HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM

File Size 719.10K  /  59 Page

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    V58C2256 V58C2256164S V58C2256404S V58C2256804S

MOSEL[Mosel Vitelic, Corp]
Part No. V58C2256 V58C2256164S V58C2256404S V58C2256804S
OCR Text ...V QFC options for FET control. x4 parts. *Note: DDR 333B Supports PC2700 module with 2.5-3-3 timing DDR 266A Supports PC2100 module with 2...bit 8192 x 512 x 16 bit 8192 x 512 x 16bit 8192 x 512 x 16bit Input buffer Output buf...
Description HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM

File Size 795.11K  /  61 Page

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    VG36128161A VG36128401A VG36128801A

VML[Vanguard International Semiconductor]
Part No. VG36128161A VG36128401A VG36128801A
OCR Text ... column access in every cycle * x4, x8, x16 organization * Input/Output controlled by DQM ( LDQM, UDQM ) * 4,096 refresh cycles/64ms * Burst termination by burst stop and precharge command * Burst read/single write option The information...
Description CMOS Synchronous Dynamic RAM

File Size 937.82K  /  69 Page

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    VG36128161BT VG36128401BT VG36128801BT

VML[Vanguard International Semiconductor]
Part No. VG36128161BT VG36128401BT VG36128801BT
OCR Text ...uto) refresh and self refresh * X4, X8, X16 organization * LVTTL compatible inputs and outputs * 4,096 refresh cycles / 64ms . Documen...bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. ...
Description CMOS Synchronous Dynamic RAM

File Size 1,354.59K  /  68 Page

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    VG36256161A VG36256401A VG36256801A

VML[Vanguard International Semiconductor]
Part No. VG36256161A VG36256401A VG36256801A
OCR Text ... column access in every cycle * x4, x8, x16 organization * Input/Output controlled by DQM, LDQM, UDQM * 8,192 refresh cycles/64ms * Burst termination by burst stop and precharge command * Burst read/single write option The information sh...
Description CMOS Synchronous Dynamic RAM

File Size 941.72K  /  69 Page

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    VG36641641DT VG36641641DT-6 VG36641641DT-7 VG36641641DT-7L VG36641641DT-8H VG36641641DTL-6 VG36641641DTL-7 VG36641641DTL

ETC[ETC]
VML[Vanguard International Semiconductor]
Part No. VG36641641DT VG36641641DT-6 VG36641641DT-7 VG36641641DT-7L VG36641641DT-8H VG36641641DTL-6 VG36641641DTL-7 VG36641641DTL-7L VG36641641DTL-8H VG36644080_1641DTL-7 VG36644080_1641DTL-7L VG36644080_1641DTL-8H VG36644041DT VG36644041DT-6 VG36644041DT-7 VG36644041DT-7L VG36644041DT-8H VG36644041DTL-6 VG36644041DTL-7 VG36644041DTL-7L VG36644041DTL-8H VG36648041DT VG36648041DT-6 VG36648041DT-7 VG36648041DT-7L VG36648041DT-8H VG36648041DTL-6 VG36648041DTL-7 VG36648041DTL-7L VG36648041DTL-8H VG366440_80_1641DT_L-6 VG366440_80_1641DT_L-7 VG366440_80_1641DT_L-7L VG366440_80_1641DT_L-8H
OCR Text ...uto) refresh and self refresh * X4, X8, X16 organization * LVTTL compatible inputs and outputs * 4,096 refresh cycles / 64ms * Burst termina...bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. ...
Description CMOS Synchronous Dynamic RAM

File Size 1,361.89K  /  69 Page

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    VG37648041AT

VML[Vanguard International Semiconductor]
Part No. VG37648041AT
OCR Text x4, x8, x16 CMOS Synchronous Dynamic RAM The 256Mb DDR SDRAM is a high-speed COMS, dynamic random-access memory containing 268,435,456 bi...bit wide, one clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, ...
Description 256M:x4, x8, x16 CMOS Synchronous Dynamic RAM

File Size 963.00K  /  86 Page

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    VP16256 VP16256-27 VP16256-27CG VP16256-27CGGH1N VP16256-40 VP16256-40CG VP16256-40CGGH1N

MITEL[Mitel Networks Corporation]
Part No. VP16256 VP16256-27 VP16256-27CG VP16256-27CGGH1N VP16256-40 VP16256-40CG VP16256-40CGGH1N
OCR Text ...ND BUSY X0 VDD X1 GND X2 VDD X3 X4 X5 X6 Pin 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 185 186 187 188 189 190 191 192...bit DA bus at the selected sample rate, see Figs. 5 and 6. Results are presented on the 32-bit F bus...
Description Programmable FIR Filter

File Size 223.96K  /  20 Page

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    K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-

Samsung semiconductor
Samsung Electronic
Part No. K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-TC75 K4S640432H-L75 K4S640832H-L75 K4S641632H-L70 K4S641632H-L75 K4S640432H-TL75 K4S640832H-TL75 K4S641632H-TL60 K4S641632H-TL75
OCR Text x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.4 November 2003 * Samsung Electronics reserves the right to ch...bit write operation * DQM (x4,x8) & L(U)DQM (x16) for masking * Auto & self refresh * 64ms refresh p...
Description 64Mb H-die SDRAM Specification

File Size 142.04K  /  14 Page

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