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				Infineon Technologies AG Infineon Technologies A...
Part No.	IDP08E65D2
OCR Text	...sipation t c =25c p tot 56.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperat...pg-to220-2-1 9 idp08e65d2 emittercontrolleddiode rev.2.2,2014-08-28 a c c a c pg-...
Description	High Power RF LDMOS FETs Qualified according to JEDEC for target applications
File Size	1,703.79K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	IDP08E65D1
OCR Text	...sipation t c =25c p tot 56.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperat...pg-to220-2-1 10 idp08e65d1 emittercontrolleddioderapid1series rev.2.2,2013-12-16 a c c...
Description	High Power RF LDMOS FETs Temperature stable behaviour of key parameters
File Size	1,759.32K / 11 Page	View it Online	Download Datasheet

				INFINEON TECHNOLOGIES AG
Part No.	IPw90R340C3
OCR Text	...wer dissipation p tot t c =25 c w operating and storage temperature t j , t stg c mounting torque m3 and m3.5 screws 60 ncm value 15 9.5 34...pg-to247 9r340c pg-to247 rev. 1.0 page 1 2008-07-29 please note the new package dimensions arccordi...
Description	15 A, 900 V, 0.34 ohm, N-CHANNEL, Si, POwER, MOSFET, TO-247
File Size	547.51K / 11 Page	View it Online	Download Datasheet

				INFINEON TECHNOLOGIES AG
Part No.	IPw90R120C3
OCR Text	...wer dissipation p tot t c =25 c w operating and storage temperature t j , t stg c mounting torque m3 and m3.5 screws 60 ncm 30 417 -55 ... ...pg-to247 9r120c pg-to247 rev. 1.0 page 1 2008-07-30 please note the new package dimensions arccordi...
Description	36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POwER, MOSFET, TO-247
File Size	546.70K / 11 Page	View it Online	Download Datasheet

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