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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FK16UM-6
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| OCR Text |
...E w DRAIN e SOURCE r DRAIN e
VDSS ................................................................................ 300V rDS (ON) (MAX) .....150V, ID = 8A, VGS = 10V, RGEN = RGS = 50
IS = 8A, VGS = 0V Channel to case IS = 16A, dis/dt = -1... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
53.46K /
5 Page |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
FK16UM-6
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| OCR Text |
...E w DRAIN e SOURCE r DRAIN e
VDSS ................................................................................ 300V rDS (ON) (MAX) .....150V, ID = 8A, VGS = 10V, RGEN = RGS = 50
IS = 8A, VGS = 0V Channel to case IS = 16A, dis/dt = -1... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
59.28K /
5 Page |
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it Online |
Download Datasheet
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDB66N15TM FDB66N15
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| OCR Text |
...solute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Sour...150V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDB66N15
Devic... |
| Description |
150V N-Channel MOSFET
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| File Size |
625.77K /
8 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT30M61SLL APT30M61BLL APT30M61BLL_04 APT30M61BLL04
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| OCR Text |
...ge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC ...150V ID = 54A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 150V ID = 54A @ 25C RG = 0.6 6 INDUCTIVE SWI... |
| Description |
POWER MOS 7 R MOSFET
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| File Size |
100.81K /
5 Page |
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it Online |
Download Datasheet
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Price and Availability
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