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  vceo-600v Datasheet PDF File

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    CSD794Y CSD794O CSD794AY

Continental Device India Limited
Part No. CSD794Y CSD794O CSD794AY
Description 10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY

File Size 124.14K  /  3 Page

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    CSA1316BL CSC3329GR

Continental Device India Limited
Part No. CSA1316BL CSC3329GR
Description 0.400W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 0.100A Ic, 350 - 700 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 0.100A Ic, 200 - 400 hFE

File Size 245.64K  /  3 Page

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    D1NF60

Shindengen Electric Mfg.Co....
Shindengen Electric Mfg.Co.Ltd
Glenair, Inc.
Part No. D1NF60
Description Super Fast Recovery Rectifiers(600V 0.8A) 超快速恢复(600V.8A

File Size 212.69K  /  7 Page

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    Infineon
Part No. BCP52 BCP53
Description General Purpose Transistors - SOT223; VCEO=60V; hFE=40..250
General Purpose Transistors - SOT223; VCEO=80V; hFE=40..250

File Size 94.73K  /  5 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4RC10KD IRG4RC10 IRG4RC10KDTRR
Description TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 5A条一(c)|52AA
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package

File Size 188.18K  /  10 Page

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    Continental Device Indi...
CDIL[Continental Device India Limited]
Part No. CN453 CN452
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
0.900W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40 - 150 hFE
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 40 - 200 hFE

File Size 124.98K  /  4 Page

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    2SC3242 2SC3242A

Isahaya Electronics Corporation
Part No. 2SC3242 2SC3242A
Description 900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A
900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

File Size 147.81K  /  4 Page

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    Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FFH50US60S
Description 50A, 600V StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
50A, 600V Stealth⑩ Diode
50A, 600V Stealth Diode

File Size 88.79K  /  6 Page

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    ASI10669 UHBS15-2 ASI10541 ASI10564 ASI10606 ASI10629 ASI4000 AVD150 HF75-28F MLN1037S

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASI10669 UHBS15-2 ASI10541 ASI10564 ASI10606 ASI10629 ASI4000 AVD150 HF75-28F MLN1037S
Description NPN Silicon RF Power Transistor(Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)) UHF BAND, Si, NPN, RF POWER TRANSISTOR

File Size 17.26K  /  1 Page

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    CIL351 CIL352

Continental Device India Limited
Part No. CIL351 CIL352
Description 0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 200 - 480 hFE.
0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 100 - 250 hFE.
NPN SILICON PLANAR TRANSISTORS

File Size 133.54K  /  3 Page

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