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    SI5312-H SI5312-H1

AUK corp
Part No. SI5312-H SI5312-H1
OCR Text ...4 -2585 -30100 Unit mW mA A V * Soldering temperature Tsol 260 for 10 seconds *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the...H / SI5312-H(B) Characteristic Diagrams Fig. 1 IF - VF Fig. 2 IE - IF Radiant Intensity IE [mW/...
Description IRED

File Size 205.71K  /  4 Page

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    LDBK21541-H

LIGITEK electronics co., ltd.
Part No. LDBK21541-H
OCR Text ... -30 ~ +100 mA mA mW UNIT A V Static Electricity or power surge will the Use of anti-electrosatic * glove is recommended when ha...H InGaN/GaN Blue Note : 1.The forward voltage data did not including 0.1V testing tolerance. 2. T...
Description TOWER TYPE LED LAMPS

File Size 107.33K  /  6 Page

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    HYMD525G726ALS4-H HYMD525G726ALS4-K HYMD525G726ALS4-L HYMD525G726ALS4-M HYMD525G726ALS4M-H HYMD525G726ALS4M-K HYMD525G72

Hynix Semiconductor
Part No. HYMD525G726ALS4-H HYMD525G726ALS4-K HYMD525G726ALS4-L HYMD525G726ALS4-M HYMD525G726ALS4M-H HYMD525G726ALS4M-K HYMD525G726ALS4M-L HYMD525G726ALS4M-M HYMD525G726AS4-H HYMD525G726AS4-K HYMD525G726AS4-L HYMD525G726AS4-M HYMD525G726AS4M-H HYMD525G726AS4M-K HYMD525G726AS4M-L HYMD525G726AS4M-M
OCR Text .../ 10 Rating o o Unit C C V V V mA W o C / Sec Note : Operation at above absolute maximum rating can adversely affect device re...H/L AC OPERATING TEST CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V) Parameter Referenc...
Description DDR SDRAM - Registered DIMM 2GB
Low Profile Registered DDR SDRAM DIMM

File Size 294.87K  /  17 Page

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    TPC8049-H

Toshiba Semiconductor
Part No. TPC8049-H
OCR Text ...urrent: i dss = 10 a (max) (v ds = 60 v) ? enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.5 ma ) absolute maximu...h 2009-06-18 2 thermal characteristics characteristic symbol max unit thermal resistance, chann...
Description Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications

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    TOSHIBA
Part No. TPC8046-H
OCR Text ...urrent: i dss = 10 a (max) (v ds = 40 v) ? enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.5 ma) absolute maximu...h 2013-11-01 2 thermal characteristics characteristic symbol max unit thermal resistance, chann...
Description Power MOSFET (N-ch single 30V<VDSS≤60V)

File Size 203.74K  /  7 Page

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    AP09N70I-H-HF AP09N70I-H-HF-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP09N70I-H-HF AP09N70I-H-HF-14
OCR Text ...te maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v ...h-hf -55 to 150 8.3 40 42 + 30 halogen-free product 1 linear derating factor 0.34 8 -55 to 150 param...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
8.3 A, 700 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Fast Switching Characteristic

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    Atmel
Part No. M44C890-H
OCR Text ...upply voltage range (1.8 to 6.5 v) very low sleep current (< 1 a) 32 x 16-bit eeprom (m44c890-h only) synchronous serial interface (2-wire, i 2 c, 3-wire) watchdog, por and brown-out function voltage monitoring incl. lo_bat detect f...
Description (M44C890-H / M44C090-H) Low Current Microcontroller for Wireless Communication

File Size 478.08K  /  63 Page

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    TPCP8103-H

Toshiba Semiconductor
Part No. TPCP8103-H
OCR Text ...current: i dss = 10 a (max) (v ds = -40v) ? enhancement mode: v th = -0.8 to -2.0 v (v ds = -10 v, i d = -1ma) absolute maximum ...h 2007-06-22 2 thermal characteristics characteristic symbol max unit thermal resistance, chann...
Description Field Effect Transistor Silicon MOS Type

File Size 228.84K  /  4 Page

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    AP03N70HJ-H

Advanced Power Electronics Corp.
Part No. AP03N70HJ-H
OCR Text ...te maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a...h 2.5 1.6 storage temperature range 8 54.3 linear derating factor 0.44 200812114 parameter 2.5 param...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 98.56K  /  4 Page

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