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    ASI10746 ASAT30 ASI10521 VMB70-12S ADVANCEDSEMICONDUCTORINC-VMB70-12S

ASI[Advanced Semiconductor]
Advanced Semiconductor, Inc.
Part No. ASI10746 ASAT30 ASI10521 VMB70-12S ADVANCEDSEMICONDUCTORINC-VMB70-12S
OCR Text ... I J MAXIMUM RATINGS #8-32 unc-2A G F E IC VCBO VCEO VEBO PDISS TJ TSTG JC 12 A 36 V 18 V 3.5 V 183 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 1.05 OC/W O O O DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM in...
Description    NPN SILICON RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:12 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:12 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V))

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    ASI10749 VMB80-28S VHB25-12S

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASI10749 VMB80-28S VHB25-12S
OCR Text ...IM A B C D E F G H I J #8-32 unc-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007...
Description NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V))

File Size 15.55K  /  1 Page

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    ASI10859 B40-28

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASI10859 B40-28
OCR Text ... D MAXIMUM RATINGS #8-32 unc-2A G F E IC VCBO VCEO VEBO PDISS TJ T STG JC O 5.0 A 65 V 35 V 4.0 V 60 W -65 OC to +200 OC -65 C to +150 C 2.9 OC/W TC = 25 OC O DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inc...
Description 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
NPN SILICON RF POWER TRANSISTOR

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    IRFR3910 IRFU3910 IRFRU3910

IRF[International Rectifier]
Part No. IRFR3910 IRFU3910 IRFRU3910
OCR Text ...R )D SS tp S tarting T J , J unc tion T em perature (C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 5...
Description RECT SCHOTTKY 60V 5A POWERMITE3
Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

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    IRF520L IRF520NS

IRF[International Rectifier]
Part No. IRF520L IRF520NS
OCR Text ...R )D SS tp S tarting T J , J unc tion T em perature (C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 1...
Description Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)

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    IRF520N

International Rectifier, Corp.
Part No. IRF520N
OCR Text ...Source Volta ge (V ) T J , J unc tion T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF520N 600 500 C iss C , Capacitance (pF) 400 300 C oss V G S , G...
Description Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) 功率MOSFET(减振钢板基本\u003d 100伏,的Rds(on)\u003d 0.20欧姆,身份证\u003d 9.7A
Power MOSFET(Vdss = 100 V/ Rds(on) = 0.20 Ohm/ Id= 9.7A)
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)

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    IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NSPBF IRFZ44NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NSPBF IRFZ44NSTRL
OCR Text ... ource Vo ltag e (V) T J , J unc tion T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFZ44NS/IRFZ44NL 2500 20 2000 C iss 1500 C oss 1...
Description 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)
(IRFZ44NL / IRFZ44NS) Power MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 49A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 49A条(丁)|63AB

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    IRF6215

IRF[International Rectifier]
Part No. IRF6215
OCR Text ... A 175 S tarting T J , J unc tion T em perature (C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F ....
Description HEXFET Power MOSFET
HEXFET?? Power MOSFET

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    IRFZ24N IRFZ24NPBF

IRF[International Rectifier]
Part No. IRFZ24N IRFZ24NPBF
OCR Text ... A 175 S tarting T J , J unc tion T em perature (C ) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)

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    IRLR3303 IRLU3303 U3303 IRLR_U3303 IRLR/U3303

IRF[International Rectifier]
Part No. IRLR3303 IRLU3303 U3303 IRLR_U3303 IRLR/U3303
OCR Text ...R )D SS tp S tarting T J , J unc tion T em perature (C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 1...
Description HEXFET? Power MOSFET

File Size 135.25K  /  10 Page

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