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For transistor- Found Datasheets File :: 73329    Search Time::1.422ms    
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    2SB709A 2SD601A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB709A 2SD601A
OCR Text Transistor 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD601A 2.8 -0.3 +0.2 Unit: mm s Features q q 0.650.15 +0.25 1.5 -0.05 0.650.15 0.95 1.1 -0.1 +0.2 Collector ...
Description Silicon PNP epitaxial planer type

File Size 47.56K  /  3 Page

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    MSK[M.S. Kennedy Corporation]
Part No. MSK3018
OCR Text ...etermine the dissipation of the transistor while it is transitioning from OFF to ON, and vice-versa. Turning the gate ON and OFF too slow will cause excessive dissipation, while turning it ON and OFF too fast will cause excessive switching ...
Description THREE PHASE BRIDGE MOSFET POWER MODULE

File Size 223.44K  /  5 Page

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    2SB745 2SB745A 2SD661A 2SB0745 2SD661

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SB745 2SB745A 2SD661A 2SB0745 2SD661
OCR Text Transistor 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A Unit: mm 6.90.1 0.4 q q q 2.40.2 2.00.2 3.50.1 Low noise voltage NV. High foward...
Description Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR

File Size 49.87K  /  3 Page

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    MSK[M.S. Kennedy Corporation]
Part No. MSK3020
OCR Text ...etermine the dissipation of the transistor while it is transitioning from OFF to ON and vice-versa. Turning the gate ON and OFF too slow will cause excessive dissipation, while turning it ON and OFF too fast will cause excessive switching n...
Description H-BRIDGE MOSFET POWER MODULE

File Size 236.25K  /  6 Page

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    MSK[M.S. Kennedy Corporation]
Part No. MSK645B MSK645
OCR Text ...cted to the base of the cascode transistor in the equivalent schematic. The purpose of the cascode transistor is to isolate the input transistor from the high voltage supply. The input transistor must have a very high transition frequency s...
Description HIGH PERFORMANCE, HIGH VOLTAGE VIDEO DISPLAY DRIVER

File Size 215.24K  /  6 Page

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    2SB772 B772 UTC2SB772

友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 2SB772 B772 UTC2SB772
OCR Text TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES *High current output up to 3A *...
Description MEDIUM POWER LOW VOLTAGE TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR

File Size 45.29K  /  2 Page

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    Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
Part No. MSS0271
OCR Text ...her buzzer or speaker without a transistor. Built-in Oscillating Resistor. Single section, 2.79 seconds (4380h). Speech with mute (behind) is up to 21.1 seconds (20000h). Repeat function that can repeat up to 8 times. To turn on LED in sink...
Description 2.7 VOICE ROM
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection

File Size 60.19K  /  12 Page

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    ZARLINK[Zarlink Semiconductor Inc]
Part No. MT91610AQ MT91610
OCR Text ...rive (Output). Controls the Tip transistor. Connects 330nF cap to GND. Tip Feed (Output). Connects to the Tip transistor and to TIP via the Tip feed resistor. No Connection. Left open. Tip. Connects to the TIP lead of the telephone line. Re...
Description Short loop Subscriber Line Interface Circuit (SLIC) with 2-4 wire conversion, Programmable line impedance, ringing amplification and On-hook transmission for DID
Programmable Ringing SLIC

File Size 251.31K  /  20 Page

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    MTB10N40E MTB10N40E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB10N40E MTB10N40E-D
OCR Text ... (c)Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1994 1 MTB10N40E ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID =...
Description TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES

File Size 272.75K  /  10 Page

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    Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTB23P06E MTB23P06
OCR Text ... (c)Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1994 1 MTB23P06E ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID =...
Description TMOS POWER FET 23 AMPERES 60 VOLTS TMOS是功率FET 23安培60伏特

File Size 280.12K  /  10 Page

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For transistor- Found Datasheets File :: 73329    Search Time::1.422ms    
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