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  tjmax-0.140 Datasheet PDF File

For tjmax-0.140 Found Datasheets File :: 3241    Search Time::4.235ms    
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    LINER[Linear Technology]
Part No. LTC1442 LTC1441 LTC1440 144012FA LTC1442CN8 LTC1440CMS8 LTC1440IS8 LTC1442IS8 LTC1441CS8 LTC1442CS8 LTC1440CS8 LTC1441IS8 LTC1440CN8 LTC1440IN8 LTC1441CN8 LTC1442IN8 LTC1441IN8
OCR Text ...S8 PACKAGE 8-LEAD PLASTIC SO TJMAX = 150C, JA = 130C/ W (N8) TJMAX = 150C, JA = 175C/ W (S8) TOP VIEW OUT A 1 V- 2 IN A + 3 IN A - ...0 3.7 5.7 5.7 UNITS V A A A 2.0 2.1 3.5 3.5 LTC1440 LTC1441 LTC1442 q q q LTC1440/LTC...
Description From old datasheet system
Ultralow Power Single/Dual Comparator with Reference

File Size 267.39K  /  12 Page

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    BUZ104SL Q67040-S4006-A2

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BUZ104SL Q67040-S4006-A2
OCR Text ... Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 12.5 A, V DS = 40 V, diF/dt = 200...0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 20 A ...
Description SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175°C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175∑C operating temperature)

File Size 124.66K  /  8 Page

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    BUZ104S Q67040-S4007-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BUZ104S Q67040-S4007-A2
OCR Text ... Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 13.5 A, V DS = 40 V, diF/dt = 200...0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 20 A ...
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)

File Size 126.55K  /  8 Page

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    BUZ110SL Q67040-S4004-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BUZ110SL Q67040-S4004-A2
OCR Text ... Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 40 V, diF/dt = 200 A/...0.75 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25C, unless otherwise specifie...
Description High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
From old datasheet system

File Size 119.33K  /  8 Page

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    BUZ111SL Q67040-S4003-A2 BUZ111

SIEMENS[Siemens Semiconductor Group]
Part No. BUZ111SL Q67040-S4003-A2 BUZ111
OCR Text ... Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 40 V, diF/dt = 200 A/...0.6 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25C, unless otherwise specified...
Description From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

File Size 118.31K  /  8 Page

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    BUZ111 BUZ111S Q67040-S4003-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BUZ111 BUZ111S Q67040-S4003-A2
OCR Text ... Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 40 V, diF/dt = 200 A/...0.6 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25C, unless otherwise specified...
Description High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
From old datasheet system

File Size 120.08K  /  8 Page

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    IRFB3006PBF

International Rectifier
Part No. IRFB3006PBF
OCR Text ...nction temperature. Limited by TJmax, starting TJ = 25C, L = 0.022mH RG = 25, IAS = 170A, VGS =10V. Part not recommended for use above this value . ISD 170A, di/dt 1360A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%....
Description HEXFETPower MOSFET

File Size 294.70K  /  8 Page

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