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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FK10UM-9
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| OCR Text |
...mbol VDSS VGSS ID IDM IS ISM PD tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storag... |
| Description |
HIGH-SPEED SWItchING USE
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| File Size |
51.62K /
5 Page |
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it Online |
Download Datasheet
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Fuji
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| Part No. |
F9223L-F219
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| OCR Text |
...m ratings : vcc=19v , tc=tj(ic)=tch(q1,q2)=25 ? c section item symbol ratings units remarks min max mos-fet drain-source voltage v ds -1.5 +500 v q1 and q2 continuous drain current i d -5.3 +5.3 a q1: i dpulse -21.2 +21.2 a 19-4 terminal ga... |
| Description |
M-Power
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| File Size |
1,321.74K /
24 Page |
View
it Online |
Download Datasheet
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Powerex, Inc. POWEREX[Powerex Power Semiconductors]
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| Part No. |
FK10UM-9
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| OCR Text |
...mbol VDSS VGSS ID IDM IS ISM PD tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storag... |
| Description |
HIGH-SPEED SWItchING USE 10 A, 450 V, 0.92 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
57.44K /
5 Page |
View
it Online |
Download Datasheet
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Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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| Part No. |
FK14KM-10
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| OCR Text |
...mbol VDSS VGSS ID IDM IS ISM PD tch Tstg Viso --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature S... |
| Description |
HIGH-SPEED SWItchING USE
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| File Size |
53.25K /
5 Page |
View
it Online |
Download Datasheet
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