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TOSHIBA
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| Part No. |
TPC8010-H
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| OCR Text |
...charge q gd 4.4 gate switch charge q sw v dd
24 v, v gs 10 v, i d 11 a 5.5 nc source-drain ratings an...h 2002-03-12 4 ... |
| Description |
Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) DC-DC Converters Notebook PC Applications Portable Equipment Applications
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| File Size |
176.57K /
7 Page |
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it Online |
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TOSHIBA
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| Part No. |
TPCA8060-H
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| OCR Text |
...?) charge q gd ? 9.9 ? gate switch charge q sw v dd 24 v, v gs = 10 v, i d = 45 a ? 17 ? nc source-drain ratings and charac...h 2009-04-27 4 10 100 0.1 1 25 100 ta = ? 55c 100 1 1000 10 0.1 i d ? v ds 5 80... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
211.25K /
7 Page |
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it Online |
Download Datasheet
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TOSHIBA
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| Part No. |
TPC8046-H
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| OCR Text |
...?) charge q gd ? 9.5 ? gate switch charge q sw v dd 32 v, v gs = 10 v, i d = 18 a ? 15 ? nc source-drain ratings and charac...h 2013-11-01 4 v gs = 10 v 4.5 0.1 1 10 100 100 10 1 25 100 ta = ? 55c 100 0.1 1 10... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
203.74K /
7 Page |
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it Online |
Download Datasheet
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TOSHIBA
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| Part No. |
TPCA8056-H
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| OCR Text |
...charge 1 gate-drain charge gate switch charge symbol q g q gs1 q gd q sw test condition v dd 24 v, v gs = 10 v, i d = 48 a v dd 24...h 4 7. 7. 7. 7. marking marking marking marking fig. fig. fig. fig. 7.1 7.1 7.1 7.1 marking ... |
| Description |
MOSFETs Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
230.97K /
9 Page |
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it Online |
Download Datasheet
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