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IRF[International Rectifier]
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| Part No. |
IRHNA7264SE
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET tech... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.110ohm, Id=34A)
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| File Size |
98.87K /
4 Page |
 View
it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
IRHNA7360SE
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET tech... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=400V, RdS(on)=0.20ohm, Id=24.3A)
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| File Size |
105.14K /
4 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHNA7460SE
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET tech... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)
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| File Size |
105.67K /
4 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHNA9064
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HA... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.055ohm, Id=-48A)
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| File Size |
91.11K /
4 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHNA9160
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier's P-Channel RAD ... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-38A)
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| File Size |
123.17K /
4 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
JANSH2N7262 IRHF7230 IRHF8230 JANSR2N7262
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
298.46K /
12 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
RHN7150
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| OCR Text |
...n, these devices are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs... |
| Description |
TRANSISTOR N-CHANNEL
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| File Size |
452.79K /
14 Page |
View
it Online |
Download Datasheet |
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