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Microchip
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| Part No. |
MCP19114
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| OCR Text |
...- + 5 v g a te driv e - 0 .5a si nk /sou rc e curren t -+ 1 0 v g a t e dr i v e - 1 a sin k /so u rc e c u r r ent ? p ea k c u r r e ...sic a dditi onal gpa0 1 y an0 ? ? ioc y ? analog/digital debug output ( 1 ) gpa1 2 y an1 ? ? ioc y ?... |
| Description |
Digitally Enhanced Power Analog Synchronous Low-side PWM Controller
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| File Size |
3,057.47K /
230 Page |
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Analog Devices, Inc.
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| Part No. |
ADL5306ACP-R2 ADL5306ACP-REEL7
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| OCR Text |
... is b i as v o l t a g e is e a si l y acco un te d f o r in g e n e ra t i n g i ref . th e loga r i t h m i c f r o n t en d s o u t p u t is a v a i la b l e a t vl o g . th e b a sic loga r i thmic s l o p e a t t h i s o u ... |
| Description |
60 dB Range (100 nA to 100 UA) Low Cost Logarithmic Converter SPECIALTY ANALOG CIRCUIT, QCC16
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| File Size |
798.74K /
16 Page |
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Download Datasheet |
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CREE POWER
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| OCR Text |
...epitaxy 0 = single side polish, si face epi ready c = single side polish, c face epi ready d = double side polish, si face epi ready g = double side polish, c face epi ready 1 = cmp polish, si face epi ready 2 = double side cmp polish, si f... |
| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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