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  rg-142 Datasheet PDF File

For rg-142 Found Datasheets File :: 697    Search Time::1.797ms    
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    ONSEMI[ON Semiconductor]
Part No. NTF3055-160T1 NTF3055-160T3 NTF3055-160T3LF NTF3055-160 NTF3055-160-D
OCR Text ...ID = 2.0 Adc, VGS = 10 Vdc, Vdc RG = 9.1 ) (Note 3.) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 9.2 9.2 16 9.2 6.9 1.4 3.0 20 20 40 20 14 - - nC ns SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 2.0 Adc, VGS = 0 Vdc) (IS =...
Description TRANSISTOR|MOSFET|N-CHANNEL|60VV(BR)DSS|2AI(D)|SOT-223
From old datasheet system
Power MOSFET 2.0 Amps, 60 Volts N?Channel SOT23(2A,60V逻辑电平,N通道,SOT-223封装的功率MOSFET)
Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 2 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261

File Size 58.35K  /  8 Page

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    IXZH10N50LA IXZH10N50LB

IXYS Corporation
Part No. IXZH10N50LA IXZH10N50LB
OCR Text ...t 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0 VDSS ID25 = = 500 V 10 A Maximum Ratings 500 500 20 30 10 60 16 TBD 5 >200 250 1...142.85 -144.45 -145.98 -147.31 -148.50 -149.72 -150.84 -151.71 -152.76 -152.79 -153.60 -154.31 -155....
Description RF Power MOSFET

File Size 259.52K  /  9 Page

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    GMA7496LS20T GMA7496L GMA7496LD20T GMA7496L1

Gamma Microelectronics Inc.
Part No. GMA7496LS20T GMA7496L GMA7496LD20T GMA7496L1
OCR Text ...test circuit: VS = 14V, RL = 8, Rg = 50 , TA = 25C Parameter Supply Voltage Total Quiescent Current Output DC Offset Referred to SVR Poten...142 3.000 - 3.600 0.060 TYP 1.524 TYP 0.014 - 0.022 0.360 - 0.560 2.540 TYP 0.100 TYP 0.126 - 0.1...
Description 2W 2W AMPLIFIER WITH DC VOLUME CONTROL

File Size 277.23K  /  12 Page

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    BUK9610-30

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK9610-30
OCR Text ...D = 15 V; ID = 25 A; VGS = 5 V; RG = 5 Measured from tab to centre of die Measured from drain lead solder point to centre of die Measured from source lead solder point to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERIST...
Description TrenchMOS transistor Logic level FET

File Size 47.74K  /  8 Page

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    RQJ0203WGDQA RQJ0203WGDQATL-E

Vectron International, Inc.
Renesas Electronics Corporation
Part No. RQJ0203WGDQA RQJ0203WGDQATL-E
OCR Text ...D = -1.1 A VGS = -4.5 V RL = 9 Rg = 4.7 VDD = -10 V VGS = -4.5 V ID = -2.1A IF = -2.1 A, VGS = 0 Note3 Rev.3.00 May 24, 2006 page 2 of 6 RQJ0203WGDQA Main Characteristics Maximum Channel Power Dissipation Curve 1 -100 Operation...
Description 2100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, SC-59A, MPAK-3
Silicon P Channel MOS FET Power Switching

File Size 94.79K  /  7 Page

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    SI2301CDS SI2301CDS-T1-E3 SI2301CDS-T1-GE3

Vishay Siliconix
Part No. SI2301CDS SI2301CDS-T1-E3 SI2301CDS-T1-GE3
OCR Text ...nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = - 10 V, RL = 10 ID = - 1 A, VGEN = - 4.5 V, RG = 1 f = 1 MHz VDS = - 10 V, V...142 - 0.4 - 20 - 18 2.2 -1 100 -1 - 10 V mV/C V nA A A S Symbol Test Conditions Min. Typ. Max. Uni...
Description P-Channel 20-V (D-S) MOSFET

File Size 99.62K  /  6 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. ESN26A090IV
OCR Text ...F IGR Tch im l e Condition RG=5 RG=5 Vp VGDO P3dB d GL Rth a in Rating Limit 50 <TBD >-7.2 200 120 -5 150 -65 to +175 250 ...142.5 0.588 129.2 0.228 127.2 0.333 -146.4 0.606 -155.0 0.739 -165.1 0.805 -172.8 0.843 -178.7 0.864...
Description High Voltage - High Power GaN-HEMT

File Size 102.49K  /  4 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. ESN35A030MK EGN35A030MK
OCR Text ...re r P im l e Condition RG=15 RG=15 Vp VGDO P3dB d GL Rth VDS VGS Tc=25oC Pt Tstg Tch ry a in Rating Unit V V W oC oC 120 ...142.2 0.822 139.3 S21 MAG ANG 1.387 -4.8 1.348 -8.3 1.313 -11.5 1.297 -14.9 1.280 -18.4 1.279 -22...
Description High Voltage - High Power GaN-HEMT

File Size 100.62K  /  4 Page

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For rg-142 Found Datasheets File :: 697    Search Time::1.797ms    
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