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  non-punch Datasheet PDF File

For non-punch Found Datasheets File :: 1102    Search Time::4.281ms    
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    ADPOW[Advanced Power Technology]
Part No. APT40GT60BR
OCR Text ...high voltage power IGBTs. Using non-punch Through Technology the Thunderbolt IGBTTM offers superior ruggedness and ultrafast switching speed. * Low Forward Voltage Drop * Low Tail Current * Avalanche Rated MAXIMUM RATINGS Symbol VCES V...
Description The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 80A

File Size 24.56K  /  2 Page

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    ADPOW[Advanced Power Technology]
Part No. APT60GT60BR
OCR Text ...high voltage power IGBTs. Using non-punch Through Technology the Thunderbolt IGBTTM offers superior ruggedness and ultrafast switching speed. * Low Forward Voltage Drop * Low Tail Current * Avalanche Rated MAXIMUM RATINGS Symbol VCES V...
Description The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 116A

File Size 24.57K  /  2 Page

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    DIM200MHS17-A000

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DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
Part No. DIM200MHS17-A000
OCR Text ... 10s Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 200A 400A *(measured at the power busbars and not the auxiliary terminals) APPL...
Description Half Bridge IGBT Module

File Size 146.53K  /  10 Page

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    IRAMX16UP60A

IRF[International Rectifier]
Part No. IRAMX16UP60A
OCR Text ...solated Package. * Low VCE (on) Non Punch Through IGBT Technology. * Undervoltage lockout for all channels * Matched propagation delay for all channels * Low side IGBT emitter pins for current control * Schmitt-triggered input logic * Cross...
Description From old datasheet system
Plug N DriveTM Integrated Power Module for Appliance Motor Drive

File Size 365.23K  /  18 Page

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    APT11GF120BRDQ1 APT11GF120BRDQ1G

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT11GF120BRDQ1 APT11GF120BRDQ1G
OCR Text ...high voltage power IGBTs. Using non-punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. * Low Forward Voltage Drop * RBSO...
Description FAST IGBT & FRED
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 11; 25 A, 1200 V, N-CHANNEL IGBT, TO-247AC

File Size 427.50K  /  9 Page

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    BTS114A BTS114

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BTS114A BTS114
OCR Text ...ut not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and condi...
Description TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic) TEMPFET(N通道增强模式晶闸管特征温度传感器

File Size 569.32K  /  10 Page

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    BTS117

INFINEON[Infineon Technologies AG]
Part No. BTS117
OCR Text ...ut not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and condi...
Description Smart Lowside Power Switch

File Size 195.33K  /  9 Page

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    DIM400DDM17-A000

Dynex Semiconductor Ltd.
Part No. DIM400DDM17-A000
OCR Text ...High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 400A 800A *(measured at the power busbars and not the auxiliary t...
Description Dual Switch IGBT Module

File Size 144.01K  /  10 Page

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    DIM400GDM33-A000

Dynex Semiconductor Ltd.
Part No. DIM400GDM33-A000
OCR Text ...High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES VCE(sat) (typ) (max) IC IC(PK) (max) 3300V 3.2V 400A 800A APPLICATIONS s s s External connection E1 E1 C2 C2 ...
Description Dual Switch IGBT Module Preliminary Information

File Size 162.21K  /  10 Page

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    DIM400LSS17-A000

Dynex Semiconductor Ltd.
Part No. DIM400LSS17-A000
OCR Text ... 10s Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 400A 800A *(measured at the power busbars and not the auxiliary terminals) APPL...
Description Single Switch IGBT Module

File Size 134.69K  /  10 Page

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