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  isd-74 Datasheet PDF File

For isd-74 Found Datasheets File :: 804    Search Time::3.156ms    
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    SLA5046

SANKEN[Sanken electric]
Part No. SLA5046
OCR Text ...VGS=10V, see Fig. 3 on page 16. ISD=7A, VGS=0V ISD=100mA j-a j-c VISO Tch Tstg 5 (Ta=25C, with all circuits operating, without heats...74 ...
Description N-channel General purpose

File Size 21.00K  /  1 Page

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    ADP3170 ADP3170JRU ADP3170JRUZ-REEL ADP3170JRUZ-REEL7 ADP3170JRU-REEL7

AD[Analog Devices]
Part No. ADP3170 ADP3170JRU ADP3170JRUZ-REEL ADP3170JRUZ-REEL7 ADP3170JRU-REEL7
OCR Text ...0 4.5 170 45 VIL(SD) VIH(SD) ISD ICT RO(ERR) gm(ERR) IO(ERR) VCOMP(MAX) VCOMP(OFF) BWERR VCS(TH) ICS+, ICS- tCS 2.05 FB = 0 FB F...74 114 40 Typ 80 5 120 50 250 200 7.5 7 1 Max 86 126 60 500 Unit % % % % mV ns mA V V ICC VUVLO ...
Description VRM 8.5 Compatible Single Phase Core Controller

File Size 175.23K  /  16 Page

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    HUF76139P3 HUF76139S3S HUF76139S3ST HUF76139S3STNL

FAIRCHILD[Fairchild Semiconductor]
Part No. HUF76139P3 HUF76139S3S HUF76139S3ST HUF76139S3STNL
OCR Text ...vered Charge SYMBOL VSD trr QRR ISD = 75A ISD = 75A, dISD/dt = 100A/s ISD = 75A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.25 85 160 UNITS V ns nC Typical Performance Curves 80 VGS = 10V ID, DRAIN CURRENT (A) 60 VGS = 4.5V 40 1....
Description    75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
75A 30V 0.0075 Ohm N-Channel Logic Level UltraFET Power MOSFETs

File Size 224.57K  /  11 Page

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    IRF830AL IRF830AS

IRF[International Rectifier]
Part No. IRF830AL IRF830AS
OCR Text ...THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) I D , Drain Current (A) 10us 10 100us 10 TJ = 150 C 1ms 1 10ms 1 TJ = 25 C 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 0.1 TC = 25 C TJ = 150 C...
Description 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)
Power MOSFET(Vdss=500V/ Rds(on)max=1.40ohm/ Id=5.0A)

File Size 152.88K  /  10 Page

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    IRF830A IRF830APBF

International Rectifier, Corp.
Part No. IRF830A IRF830APBF
OCR Text ...Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 10us 10 100us 10 TJ = 150 C 1ms 1 10ms 1 TJ = 25 C 0.1 0.2 V GS = 0 V 0.4 0.6 ...
Description HEXFET Power MOSFET HEXFET功率MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 138.21K  /  8 Page

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    IRFB3207 IRFS3207 IRFSL3207

IRF[International Rectifier]
Part No. IRFB3207 IRFS3207 IRFSL3207
OCR Text ...nded for use above this value. ISD 75A, di/dt 500A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDS...
Description HEXFET Power MOSFET

File Size 382.32K  /  11 Page

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    FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3 FSS130R4 FN4059

INTERSIL[Intersil Corporation]
Part No. FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3 FSS130R4 FN4059
OCR Text ... SYMBOL VSD trr TEST CONDITIONS ISD = 11A ISD = 11A, dISD/dt = 100A/s TC = 25oC, Unless Otherwise Specified SYMBOL (Note 3) (Note 3) (Notes ...74 FSS130D, FSS130R Typical Performance Curves 100 IAS , AVALANCHE CURRENT (A) Unless Otherwi...
Description 11A/ 100V/ 0.210 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system

File Size 44.41K  /  8 Page

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    IRF646 FN2169

INTERSIL[Intersil Corporation]
Part No. IRF646 FN2169
OCR Text ...o Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX 14 56 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery...
Description 14A/ 275V/ 0.280 Ohm/ N-Channel Power MOSFET
14A, 275V, 0.280 Ohm, N-Channel Power MOSFET
From old datasheet system

File Size 59.89K  /  7 Page

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    RFP45N06 RF1S45N06SM RFG45N06 FN3574

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. RFP45N06 RF1S45N06SM RFG45N06 FN3574
OCR Text ... SYMBOL VSD trr TEST CONDITIONS ISD = 45A ISD = 45A, dISD/dt = 100A/s MIN TYP MAX 1.5 125 UNITS V ns 4-456 RFG45N06, RFP45N06, RF1S45N06SM Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 1...
Description 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
45A/ 60V/ 0.028 Ohm/ N-Channel Power MOSFETs
From old datasheet system

File Size 73.21K  /  8 Page

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    SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. STU9NB80 6748
OCR Text ... SOURCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 9 A V GS = 0...
Description N-CHANNEL 800V - 0.85 Ohm - 9.3A - TO-247 PowerMESH MOSFET
From old datasheet system
N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET

File Size 81.62K  /  8 Page

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