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				IRF[International Rectifier]
Part No.	IRF840A
OCR Text	...THIS AREA LIMITED BY RDS(on) isd , Reverse Drain Current (A) 10us 10 TJ = 150 C I D , Drain Current (A) 10 100us 1ms 1 10ms 1 TJ = 25 C 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 1.4 0.1 TC = 25 C TJ = 150 C Si...
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	87.92K / 8 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STE40NC60
OCR Text	...3.68 3 2500 -65 to 150 150 (1) isd 40A, di/dt100 A/s, VDD 24V, TjTjMAX Unit V V V A A A W W/C V/ns V C C 1/8 (*)Pulse width limited by safe operating area STE40NC60 THERMAL DATA Rthj-case Rthc-h Thermal Resistance Junction-case ...
Description	N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II POWER MOSFET N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh⑩II MOSFET N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh?II MOSFET
File Size	269.34K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	...IAS = 8.0A. (See Figure 12) isd 8.0A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended soldering techniques refer to application note #AN-994. 2 www.irf.com IRF8...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] 意法半导
Part No.	STD55NH2LL_06 D55NH2LL STD55NH2LL STD55NH2LL-1 STD55NH2LLT4 STD55NH2LL06
OCR Text	...acteristics Table 5. Symbol isd isdM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage isd = 20A, VGS = 0 32.5 28 1.7 Test conditions Min. Typ. Max. 40 160 1....
Description	N-channel 24V - 0.010ohm - 40A - DPAK/IPAK Ultra low gate charge STripFET TM Power MOSFET
File Size	476.36K / 16 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	...o Drain Current (Note 3) SYMBOL isd isdM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX -25 -100 UNITS A A S Source to Drain Diode Voltage(Note 2) Reverse Recove...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STD40NF3LL_07 D40NF3LL STD40NF3LL STD40NF3LLT4 STD40NF3LL07
OCR Text	...ited by safe operating area. 3. isd 40A, di/dt 350A/s, VDD V(BR)DSS, Tj TJMAX 4. Starting Tj = 25 C, ID = 20A, VDD = 25V Table 2. Rthj-case Rthj-amb TJ Thermal data Thermal resistance junction-case max Thermal resistance junction-...
Description	N-channel 30V - 0.009ohm - 40A - DPAK Low gate charge STripFET TM II Power MOSFET
File Size	369.46K / 13 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STD40NF03L_07 D40NF03L STD40NF03L STD40NF03LT4 STD40NF03L07 STMICROELECTRONICS-STD40NF03LT4
OCR Text	...ited by safe operating area. 3. isd 40A, di/dt 350A/s, VDD V(BR)DSS, Tj TJMAX 4. Starting Tj = 25 C, ID = 20A, VDD = 25V Table 2. Rthj-case Rthj-amb TJ Thermal data Thermal resistance junction-case max Thermal resistance junction-...
Description	N-channel 30V - 0.0090ohm - 40A - DPAK Low gate charge STripFET TM II Power MOSFET
File Size	334.70K / 13 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520NL IRF9520NS
OCR Text	...o application note #AN-994. isd -4.0A, di/dt -300A/s, VDD V(BR)DSS, IRF9520NS/L 100 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Curren...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
File Size	151.66K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520N
OCR Text	...emperature. ( See fig. 11 ) isd -4.0A, di/dt -300A/s, VDD V(BR)DSS, TJ 175C Starting TJ = 25C, L = 18 mH RG = 25, IAS = -4.0A. (See Figure 12) Pulse width 300s; duty cycle 2%. IRF9520N 100 -I D , Drain-to-Source C...
Description	Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
File Size	91.94K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9520 FN2281
OCR Text	...o Drain Current (Note 3) SYMBOL isd isdM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX -6.0 -24 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recov...
Description	6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
File Size	57.36K / 7 Page	View it Online	Download Datasheet

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