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  id-8.8a Datasheet PDF File

For id-8.8a Found Datasheets File :: 3553    Search Time::1.25ms    
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    IRF7309 IRF7309TR IRF7309PBF

International Rectifier
Part No. IRF7309 IRF7309TR IRF7309PBF
OCR Text ...m Ratings Parameter N-Channel ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG 10 Sec. Pulse Drain Current, V...8 -- -- 11 -- -- 21 -- -- 17 -- -- 22 -- -- 25 -- -- 7.7 -- -- 18 -- -- 4.0 -- -- 6.0 -- -- 520 -- -...
Description 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 161.00K  /  8 Page

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    IRF7311

IRF[International Rectifier]
Part No. IRF7311
OCR Text ...rrent TA = 25C TA = 70C VDS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Maximum 20 12 6.6 5.3 26 2.5 2.0 1.3 100 4.1 0.20 5.0 -55 to + ...8.1 12 VDD = 10V 17 25 ID = 1.0A ns 38 57 RG = 6.0 31 47 R D = 10 900 --- VGS = 0V 430 --- pF VDS =...
Description HEXFET Power MOSFET

File Size 154.76K  /  7 Page

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    IRF7313 IRF7313TR

IRF[International Rectifier]
Part No. IRF7313 IRF7313TR
OCR Text ...erwise Noted) Symbol VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA...8 -55 to + 150 A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum Junction-...
Description 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 542.53K  /  7 Page

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    IRF7316

IRF[International Rectifier]
Part No. IRF7316
OCR Text ...herwise Noted) Symbol VDS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA...8 0.20 -5.0 -55 to + 150 A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum...
Description HEXFET POWER MOSFET

File Size 235.36K  /  7 Page

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    IRF7317

IRF[International Rectifier]
Part No. IRF7317
OCR Text ...rent TA = 25C TA = 70C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 100 4.1 0.20 5.0 -5.0 -55 to + 150 C N-Channel 20 6.6 5.3 26 2.5 2.0...8.1 12 15 22 17 25 40 60 38 57 42 63 31 47 49 73 900 -- 780 -- 430 -- 470 -- 200 -- 240 -- Units V V...
Description 6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
HEXFET Power MOSFET

File Size 147.74K  /  10 Page

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    IRF7319

IRF[International Rectifier]
Part No. IRF7319
OCR Text ...rent TA = 25C TA = 70C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 82 4.0 0.20 5.0 -5.0 -55 to + 150 C N-Channel 30 6.5 5.2 30 2.5 2.0 1.3 140 -2.8 Maximum P-Channel -30 20 -4.9 -3.9 -30 -2.5 Units V Pulsed Drain Current Co...
Description HEXFET Power MOSFET
HEXFET?? Power MOSFET

File Size 128.05K  /  10 Page

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    IRF7328 IRF7328TR

International Rectifier
Part No. IRF7328 IRF7328TR
OCR Text ...m@VGS = -10V 32m@VGS = -4.5V ID -8.0A -6.8A Description New trench HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, co...
Description    HEXFET Power MOSFET
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 106.75K  /  8 Page

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    IRF7379

IRF[International Rectifier]
Part No. IRF7379
OCR Text ...Maximum Ratings Parameter VSD ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Drain-to-Source Voltage Continuous Drain Cur...8 4.6 46 2.5 0.02 20 5.0 -55 to + 150 -5.0 P-Channel -30 -4.3 -3.4 -34 Units A W W/C V V/n...
Description Power MOSFET

File Size 211.55K  /  10 Page

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    IRF7416 IRFB7416 IRF7416TR

International Rectifier
Part No. IRF7416 IRFB7416 IRF7416TR
OCR Text ...ute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS EAS dv/dt TJ,TSTG Continuous Drain Current, VGS @ -10V Cont...8/25/97 IRF7416 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(...
Description Power MOSFET(Vdss=-30V/ Rds(on)=0.02ohm)
Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 112.47K  /  9 Page

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    IRF7424

International Rectifier
Part No. IRF7424
OCR Text ....5@VGS = -10V 22@VGS = -4.5V ID -11A -8.8A Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides th...
Description Ultra Low On-Resistance

File Size 166.10K  /  9 Page

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