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  id-6.8a Datasheet PDF File

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    Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
Part No. FY8AAJ-03A
OCR Text ............................ 23m q ID ........................................................................................... 8A SOP-8 ...6 7 5 3 2 7 5 3 2 7 5 3 2 tw = 100s 101 1ms 10ms 100ms 1.2 0.8 100 0.4 10-1 7 5...
Description GT 24C 24#16 SKT RECP
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 42.22K  /  4 Page

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    IRF7313 IRF7313TR

IRF[International Rectifier]
Part No. IRF7313 IRF7313TR
OCR Text ...erwise Noted) Symbol VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA...6.5 5.2 30 2.5 2.0 1.3 82 4.0 0.20 5.8 -55 to + 150 A W mJ A mJ V/ ns C Thermal Resistance ...
Description 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 542.53K  /  7 Page

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    IRF7316

IRF[International Rectifier]
Part No. IRF7316
OCR Text ...herwise Noted) Symbol VDS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA...6.0 48 RD = 15 VGS = 0V pF VDS = -25V = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characte...
Description HEXFET POWER MOSFET

File Size 235.36K  /  7 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
http://
Part No. FY8ABJ-03
OCR Text ............................ 20m q ID ......................................................................................... -8A SOP-...6 -2.0 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN...
Description Power MOSFETs: FY Series
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GTS; No. of Contacts:11; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
Pch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 42.37K  /  4 Page

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    IRF7319

IRF[International Rectifier]
Part No. IRF7319
OCR Text ...rent TA = 25C TA = 70C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 82 4.0 0.20 5.0 -5.0 -55 to + 150 C N-Channel 30 6.5 5.2 30 2.5 2.0 1.3 140 -2.8 Maximum P-Channel -30 20 -4.9 -3.9 -30 -2.5 Units V Pulsed Drain Current Co...
Description HEXFET Power MOSFET
HEXFET?? Power MOSFET

File Size 128.05K  /  10 Page

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    IRF7328 IRF7328TR

International Rectifier
Part No. IRF7328 IRF7328TR
OCR Text ...m@VGS = -10V 32m@VGS = -4.5V ID -8.0A -6.8A Description New trench HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, co...
Description    HEXFET Power MOSFET
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 106.75K  /  8 Page

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    IRF7379

IRF[International Rectifier]
Part No. IRF7379
OCR Text ...Maximum Ratings Parameter VSD ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Drain-to-Source Voltage Continuous Drain Cur...6 46 2.5 0.02 20 5.0 -55 to + 150 -5.0 P-Channel -30 -4.3 -3.4 -34 Units A W W/C V V/ns C ...
Description Power MOSFET

File Size 211.55K  /  10 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDMS8690
OCR Text ...ax rDS(on) = 9.0m at VGS = 10V, ID = 19.8A Max rDS(on) = 12.5m at VGS = 4.5V, ID = 11.5A High performance trench technology for extremely lo...6 5 Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current - Continu...
Description N-Channel PowerTrench MOSFET

File Size 457.71K  /  7 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. HP4936DY HP4936DYT
OCR Text ... 5.8A, 30V * rDS(ON) = 0.037 at ID = 5.8A, VGS = 10V * rDS(ON) = 0.055 at ID = 4.7A, VGS = 4.5V * Related Literature - TB334, "Guidelines fo...6) D2(5) S2(3) G2(4) Packaging SO-8 (c)2001 Fairchild Semiconductor Corporation HP4936DY R...
Description Discrete Commercial Dual N-Channel Logic Level Power MOSFET, 30V, 5.8A, 0.037 ohms @ Vgs = 10V, SO-8 Package
5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET

File Size 151.14K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDMS3572
OCR Text ...x rDS(on) = 16.5m at VGS = 10V, ID = 8.8A Max rDS(on) = 24m at VGS = 6V, ID = 8.4A Typ Qg = 28nC at VGS = 10V Low Miller Charge Optimized ef...6 7 8 4G 3S 2S 1S D Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25C unless otherw...
Description N-Channel UltraFET Trench MOSFET 80V, 22A, 16.5mOHM

File Size 497.78K  /  7 Page

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