HY27UF081G2M-TPCP pdf Datasheet P8 Part Num --- IC-ON-LINE


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HY27UF081G2M-TPCP Datasheet PDF File

For HY27UF081G2M-TPCP Found Datasheets File :: 77+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> |

					Toshiba Semiconductor
Part No.	TPCP8J0107
Description	TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
File Size	305.31K / 9 Page	View it Online	Download Datasheet

						Toshiba Electronic Devices & Storage Corporation
Part No.	TPCP8514
Description	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8
Tech specs				Official Product Page

HUA FENG CIRCUIT

					Toshiba Semiconductor
Part No.	TPCP840107 TPCP8401
Description	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS ?/ π-MOS ? TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS 楼虏 / 楼冒-MOS 楼碌) TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS ゲ / ヰ-MOS サ)
File Size	272.56K / 10 Page	View it Online	Download Datasheet

						Toshiba Electronic Devices & Storage Corporation
Part No.	TPCP8513
Description	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8
Tech specs				Official Product Page

					Toshiba Semiconductor
Part No.	TPCP840207 TPCP8402
Description	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
File Size	299.20K / 11 Page	View it Online	Download Datasheet

						Toshiba Electronic Devices & Storage Corporation
Part No.	TPCP8515
Description	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
Tech specs				Official Product Page

					HYNIX[Hynix Semiconductor]
Part No.	HY27UF081G HY27UF081G2M-V HY27UF081G2M-VCB HY27UF081G2M-F HY27UF081G2M-TCS HY27UF081G2M-TEP HY27UF081G2M-TIB HY27LF081G2M-TCP HY27LF081G2M-TEB HY27LF081G2M-TES HY27LF081G2M-TIP HY27LF081G2M-TMB HY27UF081G2M-T HY27UF081G2M-TCP HY27UF081G2M-TEB HY27UF081G2M-TES HY27UF081G2M-TIP HY27UF081G2M-TIS HY27UF081G2M-TMB HY27UF081G2M-TMP HY27UF081G2M-TMS HY27UF081G2M-TPCP HY27UF081G2M-TPCS HY27UF081G2M-TPEB HY27UF081G2M-TPIP HY27UF081G2M-TPIS HY27UF081G2M-TPMB HY27UF081G2M-TPMP HYB27UF081GB2M-T HYB27UF081GB2M-TCB HYB27UF081GB2M-TCP HYB27UF081GB2M-TCS HYB27UF081GB2M-TEB HYB27UF081GB2M-TEP HYB27UF081GB2M-TES HYB27UF081GB2M-TIP HYB27UF081GB2M-TIS HYB27UF081GB2M-TMP HYB27UF081GB2M-TPCS HYB27UF081GB2M-TPEB HYB27UF081GB2M-TPEP HYB27UF081GB2M-TPES HYB27UF081GB2M-TPIP HYB27UF081GB2M-TPIS HYB27UF081GB2M-TPMP HYB27UF081GB2M-TPMS HYB27UF081GB2M-V HYB27UF081GB2M-VCB HYB27UF081GB2M-VCP HYB27UF081GB2M-VCS HY27UF081G2M-TCB HY27UF081G2M HY27UF081G2M-TPCB HY27UF081G2M-VCP HY27UF081G2M-TPEP HY27UF081G2M-TPES HY27UF081G2M-TPMS HY27UF081G2M-TPIB HY27LF081G2M-TCS HY27LF081G2M-TPCP HY27LF081G2M-VCP HY27LF081G2M-VEB HY27LF081G2M-VEP HY27LF081G2M-TCB HY27LF081G2M-TEP HY27LF081G2M-TIB HY27LF081G2M-TIS HY27LF081G2M-TMP
Description	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
File Size	474.55K / 48 Page	View it Online	Download Datasheet

						Toshiba Electronic Devices & Storage Corporation
Part No.	TPCP8605
Description	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PS-8
Tech specs				Official Product Page

					Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
Part No.	HY27UG164GDM-UPEB HY27UG084GDM-UPEB HY27UG164G2M-TPCP HY27UG164G2M-TPIP HY27UG164G2M-TPES
Description	256M X 16 FLASH 3.3V PROM, 30 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52 512M X 8 FLASH 3.3V PROM, 30 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52 256M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
File Size	452.53K / 54 Page	View it Online	Download Datasheet

						Toshiba Electronic Devices & Storage Corporation
Part No.	TPCP8606
Description	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PS-8
Tech specs				Official Product Page

					Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
Part No.	HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB HY27LF161G2M-TCS HY27SF081G2M-TCP HY27SF081G2M-TCB HY27LF081G2M-TCB HY27LF161G2M-TCP HY27SF081G2M-F HY27UF081G2M-F HY27SF161G2M-FP HY27UF161G2M-FP HY27SF081G2M-V HY27UF081G2M-V HY27SF161G2M-VP HY27UF161G2M-VP HY27LF081G2M-VCB HY27LF081G2M-VCP HY27LF081G2M-VCS HY27LF081G2M-VEP HY27LF081G2M-VES HY27LF081G2M-TMB HY27LF081G2M-TMP HY27LF081G2M-TMS HY27LF161G2M-TMB HY27LF161G2M-TMP HY27LF161G2M-TMS HY27SF081G2M-TMB HY27SF081G2M-TMP HY27SF081G2M-TMS HY27SF161G2M-TMB HY27SF161G2M-TMP HY27SF161G2M-TMS HY27UF081G2M-TMB HY27UF081G2M-TMP HY27UF081G2M-TMS HY27UF161G2M-TMB HY27UF161G2M-TMP HY27UF161G2M-TMS HY27LF081G2M-VMB HY27LF081G2M-VMP HY27LF081G2M-VMS HY27LF161G2M-VMB HY27LF161G2M-VMP HY27LF161G2M-VMS HY27SF081G2M-VMB HY27SF081G2M-VMP HY27SF161G2M-VMB HY27SF161G2M-VMP HY27SF161G2M-VMS HY27UF081G2M-VMB HY27UF081G2M-VMP HY27UF081G2M-VMS HY27UF161G2M-VMB HY27UF161G2M-VMP HY27UF161G2M-VMS HY27LF081G2M-VEB HY27SF081G2M-VMS HY27LF081G2M-TPMP HY27LF081G2M-VPMP HY27SF081G2M-TPMP HY27SF081G2M-VPMP HY27LF161G2M-TPIS HY27SF161G2M-TPIS HY27LF161G2M-TIS HY27LF161G2M-VIS HY27SF161G2M-TIS HY27SF161G2M-VIS HY27LF161G2M-VPIS HY27SF081G2M-TEP HY27SF081G2M-TP
Description	Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes 3.3V Differential Transceiver 8-PDIP -40 to 85 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48 CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48 CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存 COILTRONICS RoHS Compliant: Yes 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
File Size	484.04K / 48 Page	View it Online	Download Datasheet

						Toshiba Electronic Devices & Storage Corporation
Part No.	TPCP8512
Description	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PS-8
Tech specs				Official Product Page

					Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
Part No.	HY27US08121A HY27US16121A HY27SS08121A HY27SS16121A HY27SS08121A-TCP HY27SS08121A-TPCP HY27SS08121A-FPCP HY27SS08121A-SMP HY27SS08121A-FCP HY27SS16121A-FCP HY27SS08121A-SPCP HY27SS16121A-FPCP HY27SS16121A-SMP HY27SS16121A-SCP HY27SS16121A-FEB HY27US08121A-FES
Description	512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63 32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48 32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 32M X 16 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 64M X 8 FLASH 3.3V PROM, 30 ns, PBGA63
File Size	421.19K / 49 Page	View it Online	Download Datasheet

						Toshiba Electronic Devices & Storage Corporation
Part No.	TPCP8607
Description	PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.32 V / tf=65 ns / PS-8
Tech specs				Official Product Page

For HY27UF081G2M-TPCP Found Datasheets File :: 77+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> |

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