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  gate-pulsed Datasheet PDF File

For gate-pulsed Found Datasheets File :: 46961    Search Time::2.047ms    
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    STW3N150 STP3N150 STFW3N150 STFW3N15010

STMicroelectronics
Part No. STW3N150 STP3N150 STFW3N150 STFW3N15010
OCR Text ...st RDS(on) per area, unrivalled gate charge and switching characteristics. Table 1. Device summary Marking 3N150 3N150 3N150 Package ...pulsed) Total dissipation at TC = 25 C Insulation withstand voltage (RMS) from all three leads to ex...
Description N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH Power MOSFET in TO-220, TO-247, TO-3PF

File Size 736.97K  /  15 Page

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    STW20NM60 STP20NM60 STB20NM60 STB20NM60-1 STB20NM60T4 STP20NM60FP

STMicroelectronics
Part No. STW20NM60 STP20NM60 STB20NM60 STB20NM60-1 STB20NM60T4 STP20NM60FP
OCR Text ...ested Low input capacitance and gate charge Low gate input resistance Figure 1. TO-220 1 2 TO-220FP 3 3 12 IPAK Applications ...pulsed) Total dissipation at TC = 25C Derating factor 12.6 (1) 80 (1) PTOT dv/dt (3) VISO Tst...
Description N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET

File Size 415.20K  /  18 Page

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    STP6NK70Z STW6NK70Z STF6NK70Z STF6NK70Z06 STMICROELECTRONICS-STW6NK70Z

STMicroelectronics
Part No. STP6NK70Z STW6NK70Z STF6NK70Z STF6NK70Z06 STMICROELECTRONICS-STW6NK70Z
OCR Text ...capability 100% avalanche rated Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility 1 3 2 TO-...pulsed) Total dissipation at TC = 25C Derating factor 5 3.15 20 110 0.87 700 30 VESD (G-S) dv...
Description N-channel 700V - 1.5Ω - 5A - TO-220/TO-220FP Zener-protected SuperMESH Power MOSFET

File Size 392.72K  /  16 Page

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    STP6NK60Z STP6NK60ZFP STB6NK60Z STB6NK60Z-1

STMicroelectronics
Part No. STP6NK60Z STP6NK60ZFP STB6NK60Z STB6NK60Z-1
OCR Text ...apability 100% avalanche tested Gate charge minimized IPAK 3 12 3 1 2 TO-220FP Description The SuperMESHTM series is obtained thro...pulsed) Total dissipation at TC = 25C Derating factor 6 3.8 24 110 0.88 3500 4.5 --55 to 150 2500 60...
Description N-channel 600V - 1Ω - 6A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH Power MOSFET
N-channel 600V - 1Ω - 6A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH?/a> Power MOSFET

File Size 534.32K  /  17 Page

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    STP4NK60ZFP STP4NK60Z STD4NK60Z STD4NK60Z-1 STB4NK60Z STB4NK60Z-1 STB4NK60Z08

STMicroelectronics
Part No. STP4NK60ZFP STP4NK60Z STD4NK60Z STD4NK60Z-1 STB4NK60Z STB4NK60Z-1 STB4NK60Z08
OCR Text ... Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor 2.5 16 PTOT 25 0.2 VESD(...
Description N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP
N-channel 600 V - 1.76 Ω - 4 A SuperMESH?/a> Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP

File Size 553.50K  /  20 Page

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    STI60N55F3 STP60N55F3 STD60N55F3 STF60N55F3 STB60N55F3 STB60N55F309 STU60N55F3

STMicroelectronics
Part No. STI60N55F3 STP60N55F3 STD60N55F3 STF60N55F3 STB60N55F3 STB60N55F309 STU60N55F3
OCR Text ...OT Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor dv/dt (2) EAS (3) VISO Tj Tstg Peak diod...
Description N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET
N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET?/a> III Power MOSFET

File Size 605.58K  /  20 Page

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    STD8NM60N STD8NM60N-1 STF8NM60N STB8NM60N STP8NM60N STX8NM60N

STMicroelectronics
Part No. STD8NM60N STD8NM60N-1 STF8NM60N STB8NM60N STP8NM60N STX8NM60N
OCR Text ...ested Low input capacitance and gate charge Low gate input resistance DPAK TO-220FP Figure 1. Internal schematic diagram Appl...pulsed) Total dissipation at TC = 25 C Insulation withstand voltage (RMS) from all three leads to ex...
Description N-channel 600 V, 0.56 Ω,7 A MDmesh?/a> II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
N-channel 600 V, 0.56 Ω,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
7 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 600 V, 0.56 Ω,7 A MDmesh?II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK

File Size 679.84K  /  19 Page

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    STD5NK60ZT4 STP5NK60Z05 STP5NK60ZFP

STMicroelectronics
Part No. STD5NK60ZT4 STP5NK60Z05 STP5NK60ZFP
OCR Text ...APABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-...pulsed) Total Dissipation at TC = 25C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diod...
Description N-CHANNEL 650V @Tjmax - 1.2Ω - 5A TO-220/FP/DPAK Zener-Protected SuperMESH?/a> MOSFET

File Size 356.23K  /  14 Page

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    SPP04N60S5 SPP04N60S507

Infineon Technologies AG
Part No. SPP04N60S5 SPP04N60S507
OCR Text gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance P-TO220-3-1 ...Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 3.4 A, VDD = 50 V ...
Description New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

File Size 481.61K  /  11 Page

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    SPN04N60S5 SPN04N60S505

Infineon Technologies AG
Part No. SPN04N60S5 SPN04N60S505
OCR Text ...T-223 4 V A * Ultra low gate charge * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance 3 2 1 V...Pulsed drain current, tp limited by Tjmax TA = 25 C Gate source voltage Gate source voltage AC (f >1...
Description New revolutionary high voltage technology Worldwide best RDS in SOT 223

File Size 515.40K  /  10 Page

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For gate-pulsed Found Datasheets File :: 46961    Search Time::2.047ms    
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