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INFINEON[Infineon Technologies AG]
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| Part No. |
SKW20N60HS
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| OCR Text |
...e loss es d ue to d iode re cov ery 2,0 m J
*) Eon include losses
E ts *
due to diode recovery
E ts *
E, SWITCHING ENERGY LOSSES
E on*
E, SWITCHING ENERGY LOSSES
1,0 m J E on *
1,0 m J E o ff
0,5 m J
E off
... |
| Description |
High Speed IGBT in NPT-technology
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| File Size |
354.97K /
14 Page |
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ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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| Part No. |
STP80N05-09
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| OCR Text |
...c tor dV/dt(1) Peak Diode Recov ery vo ltage slo pe Tstg Tj Storage Temperature Max. Operating Junction Temperature
o o
Value 50 50 20 80 60 320 150 1 5 -65 to 175 175
(1) ISD 60 A, di/dt 200 A/ms, V DD V(BR)DSS, TJ TJMAX
Unit ... |
| Description |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY?POWER MOS TRANSISTOR
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| File Size |
113.50K /
9 Page |
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it Online |
Download Datasheet
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