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05S12 SIPS6XX 2SC5639 35SB03 74LCX0 H3G63 00HST R2010
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    INFINEON[Infineon Technologies AG]
Part No. SKW20N60HS
OCR Text ...e loss es d ue to d iode re cov ery 2,0 m J *) Eon include losses E ts * due to diode recovery E ts * E, SWITCHING ENERGY LOSSES E on* E, SWITCHING ENERGY LOSSES 1,0 m J E on * 1,0 m J E o ff 0,5 m J E off ...
Description High Speed IGBT in NPT-technology

File Size 354.97K  /  14 Page

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    ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
Part No. STP80N05-09
OCR Text ...c tor dV/dt(1) Peak Diode Recov ery vo ltage slo pe Tstg Tj Storage Temperature Max. Operating Junction Temperature o o Value 50 50 20 80 60 320 150 1 5 -65 to 175 175 (1) ISD 60 A, di/dt 200 A/ms, V DD V(BR)DSS, TJ TJMAX Unit ...
Description N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY?POWER MOS TRANSISTOR

File Size 113.50K  /  9 Page

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    RS1G RS1D RS1B RS1A RS1K RS1J RS1M

Galaxy Semi-Conductor Holdings Limited
Part No. RS1G RS1D RS1B RS1A RS1K RS1J RS1M
OCR Text ... TJTSTG NOTE: 1.Rev erse recov ery time test conditions:IF=0.5A,IR=1.0A,Irr=0.25A 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0 Volts C www.galaxycn.com 3. Thermal resistance f rom junction to ambient and junction to ...
Description SURFACE MOUNT RECTIFIER

File Size 60.86K  /  2 Page

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    ERA22-02 ERA22-04 ERA22-06 ERA22-08 ERA22-10

Galaxy Semi-Conductor Holdings Limited
Part No. ERA22-02 ERA22-04 ERA22-06 ERA22-08 ERA22-10
OCR Text ...pF /W Max imum reverse recov ery time (Note1) Ty pical junction capac itance Ty pical thermal resistanc e (Note2) (Note3) Operating junction temperature range Storage temperature range N OTE: 1. Meas ured with I F =0.5A, I R=1A, I rr...
Description FAST RECOVery RECTIFIER

File Size 69.17K  /  2 Page

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    RL4A

Galaxy Semi-Conductor Holdings Limited
Part No. RL4A
OCR Text ...ltage Max imum rev ers e rec ov ery time Ty pic al junc tion c apac itanc e Ty pic al thermal res is tanc e @ TA =25 @ TA =100 (Note1) (Note2) (Note3) VF IR t rr CJ R J L TJ TSTG 1 .5 5 0.0 V A 1 00 .0 35 95 8 - 5 5 ----- + 1 50...
Description SUPER FAST RECTIFIERS

File Size 52.86K  /  2 Page

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    S2G S2M S2B S2J S2A

Galaxy Semi-Conductor Holdings Limited
Part No. S2G S2M S2B S2J S2A
OCR Text ... TJTSTG NOTE: 1.Rev erse recov ery time test conditions:IF=0.5A,IR=1.0A,Irr=0.25A www.galaxycn.com 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0 Volts 3. Thermal resistance f rom junction to ambient and junction to lead ...
Description SURFACE MOUNT RECTIFIERS

File Size 52.73K  /  2 Page

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    RS2K RS2A RS2J RS2G RS2M

Galaxy Semi-Conductor Holdings Limited
Part No. RS2K RS2A RS2J RS2G RS2M
OCR Text ... TJTSTG NOTE: 1.Rev erse recov ery time test conditions:IF=0.5A,IR=1.0A,Irr=0.25A 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0 Volts C www.galaxycn.com 3. Thermal resistance f rom junction to ambient and junction to ...
Description SURFACE MOUNT RECTIFIER

File Size 57.88K  /  2 Page

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    M5M5V416BRT-70HI M5M5V416BTP-70HI M5M5V416BRT

Renesas Electronics Corporation
Part No. M5M5V416BRT-70HI M5M5V416BTP-70HI M5M5V416BRT
OCR Text ...pe package) , both ty pes are v ery easy t o design a printed circuit board. From the point of operating temperature, the f amily is div ided into three v ersions; "Standard", "W-v ersion", and "I-v ersion". Those are summarized in the part...
Description Memory>Low Power SRAM
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

File Size 146.28K  /  10 Page

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    M5M5408BFP M5M5408BRT M5M5408BTP M5M5408BRT-70H M5M5408BRT-70HI M5M5408BTP-55H M5M5408BTP-55HI M5M5408BTP-70H M5M5408BTP

Renesas Electronics Corporation
Part No. M5M5408BFP M5M5408BRT M5M5408BTP M5M5408BRT-70H M5M5408BRT-70HI M5M5408BTP-55H M5M5408BTP-55HI M5M5408BTP-70H M5M5408BTP-70HI M5M5408BRT-55H M5M5408BRT-55HI M5M5408BFP-70HI M5M5408BFP-55H M5M5408BFP-55HI
OCR Text ...time Data hold time Write recov ery time Output disable time af t er W# low Output disable time af t er OE# high Output enable time af ter W# high Output enable time af ter OE# low ns ns ns ns ns ns ns ns ns ns ns ns 4 revision-2.0...
Description Memory>Low Power SRAM
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM

File Size 139.74K  /  10 Page

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    M5M5V416CWG-55HI02

http://
Renesas Electronics Corporation
Part No. M5M5V416CWG-55HI02
OCR Text ...time Data hold time Write recov ery time Output disable time f rom W# low Output disable time f rom OE# high Output enable time f rom W# high Output enable time f rom OE# low Limits 55HI Min 55 45 0 50 50 50 50 50 30 0 0 Max 70HI Mi...
Description 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

File Size 149.33K  /  10 Page

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