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Diodes
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| Part No. |
ZXMN3F318DN8
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| OCR Text |
dual n -channel enhancement mode mosfet summary device v (br)dss q g (nc) r ds (on) ( ) i d (a) 0.024 @ v gs = 10v ...body diode) (b) i s 3.5 3.3 a pulsed source current (body diode) (c) i sm 33 25 a power ... |
| Description |
30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET
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| File Size |
407.05K /
12 Page |
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Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] MAXIM - Dallas Semiconductor
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| Part No. |
MAX3205E MAX3208E MAX3207E MAX3207EAUT-T MAX3208EAUB MAX3205EABL-T MAX3205EATE MAX3207EAUT MAX3208EATE
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| OCR Text |
Dual, Quad, and Hex High-Speed Differential ESD-Protection ICs
General Description
The MAX3205E/MAX3207E/MAX3208E low-capacitance, 15kV ES...Body Model, 8kV Contact Discharge, and 15kV Air-Gap Discharge, as specified in IEC 61000-4-2. An int... |
| Description |
Dual, Quad, and Hex High-Speed Differential ESD-Protection ICs UNIDIRECTIONAL, SILICON, TVS DIODE, MO-178AB GT 6C 6#16S PIN PLUG UNIDIRECTIONAL, SILICON, TVS DIODE
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| File Size |
297.15K /
13 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDS6900AS FDS6900AS_NL FDS6900ASNL
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| OCR Text |
Dual N-Ch PowerTrench(R) SyncFETTM
Features
* Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 22m @ VGS = 10V RDS(on) = 28m @ VGS = 4.5V * Q1: Optimized for low switching losses Low Gate Charge (... |
| Description |
Dual N-Ch PowerTrench SyncFET
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| File Size |
180.50K /
10 Page |
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it Online |
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Fairchild Semiconductor, Corp.
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| Part No. |
FDMA1027P
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| OCR Text |
Dual P-Channel PowerTrench(R) MOSFET
October 2005
FDMA1027P
Dual P-Channel PowerTrench(R) MOSFET
General Description
This device is...Body Leakage
(Note 2)
Test Conditions
ID = -250 A VGS = 0 V, ID = -250 A, Referenced to 25C VDS... |
| Description |
CAP CER 10UF 6.3V X5R 1206 2200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC
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| File Size |
105.01K /
6 Page |
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it Online |
Download Datasheet
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Price and Availability
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