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di-500 Datasheet PDF File

For di-500 Found Datasheets File :: 31569 Search Time::1.61ms
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				IXYS
Part No.	IXDR30N120D1
OCR Text	... = 90c 27 a i rm i f = 30 a, -di f /dt = 400 a/s, v r = 600 v 20 a t rr v ge = 0 v, t j = 125c 200 ns t rr i f = 1 a, -di f /dt = 100 ...500 600 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 0 40 80 120 160 200 240 0 1 2 3 4...
Description	IGBT Discretes: NPT IGBT
File Size	58.80K / 4 Page	View it Online	Download Datasheet

				ON Semi
Part No.	MAC4DSM_D ON0380
OCR Text	...cle 2%. dv/dt 50 175 -- Symbol di/dt(c) 3.0 4.0 -- Min Typ Max Unit A/ms V/ms 2 Motorola Thyristor Device Data MAC4DSM MAC4DSN ...500 600 700 800 400 500 600 700 800 VPK, PEAK VOLTAGE (VOLTS) VPK, PEAK VOLTAGE (VOLTS) 0 Figu...
Description	4.0 AMPERES RMS 600 thru 800 VOLTS From old datasheet system
File Size	156.86K / 8 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	GT60J322
OCR Text	...rr i f 60 a, v ge 0, di/dt 100 a/ s 0.6 1.0 s thermal resistance (igbt) r th (j-c) 0.625 c/w ther...500 1 3 10 50 300 500 30 100 300 1000 3000 100 3000 5000 1000 30000 50000 10000 common emitter v ...
Description	Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
File Size	171.57K / 6 Page	View it Online	Download Datasheet

				Motorola
Part No.	MAC4DSM MAC4DSN
OCR Text	...cle 2%. dv/dt 50 175 -- Symbol di/dt(c) 3.0 4.0 -- Min Typ Max Unit A/ms V/ms 2 Motorola Thyristor Device Data MAC4DSM MAC4DSN ...500 600 700 800 400 500 600 700 800 VPK, PEAK VOLTAGE (VOLTS) VPK, PEAK VOLTAGE (VOLTS) 0 Figu...
Description	TRIACS 4.0 AMPERES RMS 600 thru 800 VOLTS
File Size	156.88K / 8 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT50M85JVFR
OCR Text	...ecovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [...500 .1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATIN...
Description	POWER MOS V 500V 50A 0.085 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	76.54K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MTW10N100E-D
OCR Text	... (i s = 10 adc, v gs = 0 vdc, di s /dt = 100 a/ m s) t b 667 reverse recovery stored charge di s /dt = 100 a/ m s) q rr 8.0 m c ...500 1000 900 25 c t j = 125 c 0 4 12 16 0 0.8 1.6 2.4 2.0 1.2 0.4 81820 t j = 100 c 25 c -55 ...
Description	Power MOSFET 10 Amps, 1000 Volts N-Channel TO-247
File Size	92.83K / 8 Page	View it Online	Download Datasheet

				Rohm
Part No.	RFV30TG6S
OCR Text	...rr=0.25i r i f =30a, v r =400v, di f /dt= - 200a/ m s i f =30a, v r =400v t j =125c di f /dt= - 200a/ m s i f =30a, di f /dt=200a/ m s, - - ...500 600 t j = 25 c t j = 150 c t j = 75 c t j = 125 c 0.01 0.1 1 10 100 0 500 10...
Description	RFV30TG6S
File Size	529.80K / 9 Page	View it Online	Download Datasheet

				Power Semiconductors
Part No.	ATF414 ATF414S12B
OCR Text	...stance 125 0,430 mohm switching di/dt critical rate of rise of on-state current, min from 75% vdrm up to 1200 a, gate 10v 5 ohm 125 500 a/ s dv/dt critical rate of rise of off-state voltage, mi n linear ramp up to 75% of vdrm 125 600 v/s td...
Description	FAST SWITCHING THYRISTOR
File Size	67.90K / 3 Page	View it Online	Download Datasheet

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