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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
WFY6N02
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| OCR Text |
...st terist terist terist i i i i cs cs cs cs s y mbol parameter v a l ue units min t y p max r qja the r mal re sis tan c e, j un c t i on-to...te 1 : s u rf a c e ? m o u n t e d o n fr4 bo a rd us i n g 1 in s q pa d s i z e ( mounted on a c ... |
| Description |
20V N?Channel MOSFET
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| File Size |
385.50K /
6 Page |
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IDT INTEGRATED DEVICE TECHNOLOGY INC DB Lectro, Inc. Integrated Device Technology, Inc.
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| Part No. |
IDT71V67603S166BGGI IDT71V67803S133PFG IDT71V67803S166BQG IDT71V67803S150BQGI IDT71V67803S150PFG IDT71V67603S133BGG IDT71V67803S133BQG IDT71V67603S150BQ IDT71V67803S150BQ IDT71V67803S150BGG IDT71V67803S150BGGI IDT71V67603S166PFGI IDT71V67803S133PFGI IDT71V67803 IDT71V67603S133PFG8 IDT71V67803S133PFG8
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| OCR Text |
...e chip enable input synchronous cs 0 , cs 1 chip selects input synchronous oe output enable input asynchronous gw global write enable input...te rm (2 ) terminal voltage with respect to gnd -0.5 to +4.6 v v te rm (3,6) terminal voltage with r... |
| Description |
3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM 3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 3.8 ns, PQFP100 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 3.8 ns, PBGA165 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 3.5 ns, PBGA165 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 4.2 ns, PQFP100
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| File Size |
989.53K /
23 Page |
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it Online |
Download Datasheet
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