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PG1336 9K2G0 SMDJ40A LA70011 8205A LL014N 2SC2122 SZ6A56
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  85c- Datasheet PDF File

For 85c- Found Datasheets File :: 107080    Search Time::1.843ms    
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    DMN26D0UFB412 DMN26D0UFB4-7 DMN26D0UFB4-7B

Diodes Incorporated
Part No. DMN26D0UFB412 DMN26D0UFB4-7 DMN26D0UFB4-7B
OCR Text ...) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v ds 1 2 3 4 5 0.01 0.1 1 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) v ...
Description N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 118.95K  /  6 Page

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    AS1371-BTDT-105 AS1371-BTDT-12 AS1371-BTDT-15 AS1371-BTDT-18 AS1371-BTDT-20 AS1371-BTDT-25 AS1371-BTDT-30 AS1371

ams AG
austriamicrosystems AG
http://
Part No. AS1371-BTDT-105 AS1371-BTDT-12 AS1371-BTDT-15 AS1371-BTDT-18 AS1371-BTDT-20 AS1371-BTDT-25 AS1371-BTDT-30 AS1371
OCR Text ...e and is qualified for -40C to +85C operation. 2 Key Features ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! Ultra-Low Dropout Voltage: 20mV @ 100mA load Operating Input Voltage Range: 1.2V to 3.6V Output Voltages: 0.6V to 3.3V in 50mV steps Max. Out...
Description 400mA, Low Input Voltage, Low Quiescent Current LDO

File Size 761.75K  /  14 Page

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    DMN26D0UDJ

List of Unclassifed Manufacturers
Part No. DMN26D0UDJ
OCR Text ...rent @ t j = +25c @t j = +85c (note 8) i dss ? ? 500 1.7 na a v ds = 20v, v gs = 0v v ds = 2.6v, v gs = 0v gate-body leakage i gss ? ? ? 1 ? 100 a na v gs = 10v, v ds = 0v v gs = 5v, v ds = 0v on cha...
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 485.74K  /  4 Page

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    Zhaoxingwei Electronics ., Ltd
Part No. DMN26D0UDJ
OCR Text ...rent @ t j = +25c @t j = +85c (note 8) i dss ? ? 500 1.7 na a v ds = 20v, v gs = 0v v ds = 2.6v, v gs = 0v gate-body leakage i gss ? ? ? 1 ? 100 a na v gs = 10v, v ds = 0v v gs = 5v, v ds = 0v on cha...
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 470.26K  /  4 Page

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    DMN2600UFB DMN2600UFB-7

Diodes Incorporated
Part No. DMN2600UFB DMN2600UFB-7
OCR Text ... state t a = 25c t a = 85c i d 1.3 0.9 a pulsed drain current i dm 3.0 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 3) p...
Description N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 133.59K  /  6 Page

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    AS1506-BTDT-10 AS1506-BTDT-100 AS1506-BTDT-50

austriamicrosystems AG
Part No. AS1506-BTDT-10 AS1506-BTDT-100 AS1506-BTDT-50
OCR Text ...p to 150 years data retention @ 85C Wiper Position Retained in EEPROM and loaded at Power-Up 256 Tap Positions 0.5LSB DNL in Voltage Divider Mode 0.5LSB INL in Voltage Divider Mode End-to-End Resistance: 10/50/100k Low End-to-End Resistance...
Description 256-Tap Digital Potentiometer with SPI Interface and High Endurance EEPROM

File Size 429.30K  /  17 Page

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    MAAT-010521 MAAT-010521-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
Part No. MAAT-010521 MAAT-010521-15
OCR Text ...50c case temperature -40c to +85c 6. exceeding any one or combination of these limits may cause permanent damage to this device. 7. m/a-com technology does not recommend sustained operation near these su rvivability limits. el...
Description Voltage Variable Attenuator

File Size 194.20K  /  6 Page

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    Linear Technology, Corp.
Part No. LT4363 LT4363-15
OCR Text ......................... C 40c to 85c lt4 363h ............................................ C 40c to 125c lt4 363mp ......................................... C 55c to 125c storage temperature range de12 ..............................
Description High Voltage Surge Stopper with Current Limit

File Size 301.34K  /  24 Page

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