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PR1501G1 MICROS TMP01 PZU15B1 DG2042DQ 1001A 905121MZ 2SB1284
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  80v.9 Datasheet PDF File

For 80v.9 Found Datasheets File :: 6897    Search Time::11.203ms    
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    IRF[International Rectifier]
Part No. IRHMS67160 IRHMS63160
OCR Text ...mA V DS = 25V, IDS = 45A A VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 45A VDS = 50V VDD = 50V, ID =...9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 1000 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TO...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

File Size 170.54K  /  8 Page

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    LT1999HS8-20PBF LT1999HS8-20TRPBF LT1999HS8-50PBF LT1999HS8-50TRPBF

Linear Technology
Part No. LT1999HS8-20PBF LT1999HS8-20TRPBF LT1999HS8-50PBF LT1999HS8-50TRPBF
OCR Text ...mmon mode voltage range: ?5v to 80v n ac cmrr > 80db at 100khz n input offset voltage: 1.5mv max n C3db bandwidth: 2mhz n smooth, cont...9.6 k r incm cm input impedance v cm = 5.5v to 80v v cm = C5v to 4.5v l l 5 3.6 20 4.8 6 m k...
Description High Voltage, Bidirectional Current Sense Amplifier

File Size 926.15K  /  26 Page

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    Kersemi Electronic Co., Ltd.
Kersemi Electronic Co.,...
Part No. IRFR3911
OCR Text ...e charge ??? 4.3 6.5 nc v ds = 80v q gd gate-to-drain ("miller") charge ??? 6.6 9.9 v gs = 10v t d(on) turn-on delay time ??? 7.9 ??? v dd = 500v t r rise time ??? 26 ??? i d = 8.4a t d(off) turn-off delay time ??? 52 ??? r g = 22 ...
Description SMPS MOSFET

File Size 3,713.04K  /  10 Page

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    IRF[International Rectifier]
Part No. IRHMS58160 IRHMS53160 IRHMS54160 IRHMS57160
OCR Text ...mA VDS = 15V, IDS = 45A A VDS = 80V ,VGS = 0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 45A VDS = 50V VDD = 50V, ID...9.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 1000 VGS 15V 12V 10V 9.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP ...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL

File Size 169.82K  /  8 Page

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    IRF[International Rectifier]
Part No. IRHMJ58160 IRHMJ53160 IRHMJ54160 IRHMJ57160
OCR Text ...0mA VDS > 15V, IDS = 35A A VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 50V VDD = 50V, ID =...9 Test Conditions A V ns C Tj = 25C, IS = 35A, VGS = 0V A Tj = 25C, IF = 35A, di/dt 100A/s VD...
Description 35 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

File Size 157.75K  /  8 Page

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    AOT282L

Alpha & Omega Semiconductors
Part No. AOT282L
OCR Text 80v n-channel mosfet general description product summary v ds i d (at v gs =10v) 105a r ds(on) (at v gs =10v) < 3.5m w (< 3.2m w * ...9 3.5 t j =125c 4.5 5.5 g fs 60 s v sd 0.68 1 v i s 105 a c iss 7765 pf c oss 960 pf c rss 66 pf r g...
Description 80V N-Channel MOSFET

File Size 273.38K  /  6 Page

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    IRF[International Rectifier]
Part No. IRHLF77110 IRHLF73110
OCR Text ...0A VDS = 10V, IDS = 3.7A A VDS= 80V ,VGS= 0V VDS = 80V, VGS = 0V, TJ =125C VGS = 10V VGS = -10V VGS = 4.5V, ID = 6.0A VDS = 50V VDD = 50V, I...9. Maximum Drain Current Vs. Case Temperature 10 Fig 10. Maximum Safe Operating Area Thermal ...
Description RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39)

File Size 203.72K  /  9 Page

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    BSP316P07

Infineon Technologies AG
Infineon Technologies A...
Part No. BSP316P07
OCR Text ...te to source charge q gs v dd =-80v, i d =-0.68a - -0.2 -0.3 nc gate to drain charge q gd - -1.87 -2.8 gate charge total q g v dd =-80v, i...9 bsp 316 p p tot 2 drain current i d = f ( t a ) parameter: | v gs | 10v 0 20 40 60 80 100 ...
Description SIPMOS Small-Signal-Transistor

File Size 118.47K  /  8 Page

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    AOT286L

Alpha & Omega Semiconductors
Part No. AOT286L
OCR Text 80v n-channel mosfet general description product summary v ds i d (at v gs =10v) 70a r ds(on) (at v gs =10v) < 6.0m w (< 5.7m w * )...9 w power dissipation a p dsm w t a =70c 167 1.3 t a =25c t c =25c 2.1 83 t c =100c power dissipati...
Description 80V N-Channel MOSFET

File Size 281.42K  /  6 Page

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